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7470929 |
Techniques are provided for fuse/anti-fuse structures, including an inner conductor structure, an insulating layer spaced outwardly of the inner conductor structure, an outer conductor structure disposed outwardly of the insulating layer...
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7439544 |
The present invention provides a manufacturing method of an image TFT array, which includes providing a substrate including a thin film transistor region, a storage capacitor region, a pad region, and a common electrode region, forming a...
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7436114 |
An electronic device can include a first workpiece, a second workpiece, and a conductive member. The first workpiece can include an electronic component that includes an electrode and an organic layer. The first workpiece can also includ...
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7422634 |
A high quality single crystal wafer of SiC is disclosed. The wafer has a diameter of at least about 3 inches, a warp of less than about 5 μm, a bow less than about 5 μm, and a total thickness variation of less than about 2.0 μm.
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7394102 |
A circuit is provided which is constituted by TFTs of one conductivity type, and which is capable of outputting signals of a normal amplitude. When an input clock signal CK 1 becomes a high level, each of TFTs ( 101, 103 ) is turned on ...
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7391050 |
A memory device is described an active material configured to be placed in a more or less conductive state by means of appropriate switching processes. The active material is positioned between a material having low thermal conductivity ...
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7372073 |
A semiconductor device includes a substrate having an insulating film on its surface, and ac active layer made of a semiconductive thin film on the substrate surface. The thin film contains a mono-domain region formed of multiple columna...
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7368331 |
A thin-film transistor, a thin-film transistor sheet, an electric circuit, and a manufacturing method thereof are disclosed, the method comprising the steps of forming a semiconductor layer by providing a semiconductive material on a sub...
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7352002 |
A method of manufacturing a thin-film semiconductor device substrate includes a step of forming a non-single crystalline semiconductor thin film on a base layer, and an annealing step of irradiating the non-single crystalline semiconduct...
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7339188 |
The present invention is related to a polycrystalline silicon film containing Ni which is formed by crystallizing an amorphous silicon layer containing nickel. The present invention includes a polycrystalline silicon film wherein the pol...
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7326589 |
The invention relates to a method for producing a TFA image sensor in which a multi-layer arrangement comprising a photo diode matrix is arranged on an ASIC switching circuit provided with electronic circuits for operating the TFA image ...
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7259427 |
The present invention relates to a semiconductor device including a circuit composed of thin film transistors having a novel GOLD (Gate-Overlapped LDD (Lightly Doped Drain)) structure. The thin film transistor comprises a first gate elec...
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7259393 |
A circuit and method are disclosed for reducing device mismatch due to trench isolation related stress. One or more extended active regions are formed on the substrate, wherein the active regions being extended from one or more ends ther...
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7259389 |
An organic electronic device of the present invention includes a substrate, at least two electrodes formed on the substrate, a conductive organic thin film that is formed on the substrate and electrically connects the electrodes, and a c...
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7247881 |
An organic light-emitting display including a substrate, at least one thin film transistor, a pixel electrode and at least one pad electrode. The substrate is provided with a display area and a pad area spaced apart from the display area...
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7183635 |
A semiconductor device for being mounted on the display panel board of a display apparatus includes a substrate; a plurality of circuit units disposed on the substrate and including thin-film transistors, the circuit units having respect...
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7166482 |
A process for producing a cold cathode field emission device. A cathode electrode is formed on a front surface of a support member that transmits exposure light. An insulating layer is formed on an entire surface. A gate electrode is for...
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7157788 |
(1) A metal oxide dispersion for a dye-sensitized solar cell, which contains metal oxide fine particles, a binder composed of a polymer compound having an action to bind to the fine particles and a solvent; (2) a method for producing a p...
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7135724 |
A field effect transistor (“FET”) is provided which includes a gate stack overlying a single-crystal semiconductor region of a substrate, a pair of first spacers disposed over sidewalls of said gate stack, and a pair of regions consi...
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7132683 |
A structure, for testing relative to an MOS transistor, closely resembles the MOS transistor of interest. For example, certain dimensions and a number of dopant concentrations typically are substantially the same in the test structure as...
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7129523 |
The reliability of a light-emitting device constituted by a combination of a TFT and a light-emitting element is to be improved. A light-emitting element is formed between a first substrate and a second substrate. The light-emitting devi...
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7122875 |
A p well serving as a channel region of a MOSFET is formed on one side of an n − layer and an n + drain region is formed on the other side. Above the n − layer, a plurality of first floating field plates are formed with a first in...
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7122832 |
An EL element and an interface between a channel and an impurity diffusion area of a thin film transistor provided in the vicinity of the EL element are spaced apart. A light shielding film is provided between the EL element and the inte...
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7119363 |
A thin-film transistor is formed on a transparent substrate and has a gate electrode film layer and a source and drain regions, and further has an alignment mark made of one and the same constituent material as a constituent material of ...
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7091519 |
A semiconductor device includes a substrate having an insulating film on its surface, and ac active layer made of a semiconductive thin film on the substrate surface. The thin film contains a mono-domain region formed of multiple columna...
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7087505 |
A method of manufacturing a thin-film semiconductor device substrate includes a step of forming a non-single crystalline semiconductor thin film on a base layer, and an annealing step of irradiating the non-single crystalline semiconduct...
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7075002 |
A method of manufacturing a thin-film solar cell, comprising the steps of: forming an amorphous silicon film on a substrate; placing a metal element that accelerates the crystallization of silicon in contact with the surface of the amorp...
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7038277 |
A method for forming an integrated circuit on an insulating substrate is described comprising the steps of forming a semiconductor layer on a seed wafer substrate containing an at least partially crystalline porous release layer, process...
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7030410 |
A method of precluding diffusion of a metal into adjacent chalcogenide material upon exposure to a quanta of actinic energy capable of causing diffusion of the metal into the chalcogenide material includes forming an actinic energy block...
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7009208 |
A memory device able to be produced without requiring high precision alignment, a method of production of the same, and a method of use of a memory device produced in this way, wherein a peripheral circuit portion (first semiconductor po...
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6998639 |
A process for fabricating a highly stable and reliable semiconductor, comprising: coating the surface of an amorphous silicon film with a solution containing a catalyst element capable of accelerating the crystallization of the amorphous...
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6970633 |
A semiconductor optical device includes a waveguide layer and a reflecting multi-layer film. The waveguide layer includes two cladding layers and an active layer sandwiched between the two cladding layers. The reflecting multi-layer film...
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6967349 |
The present invention describes a plurality of scatterometry test structures for use in process control during fabrication of a semiconductor wafer having multilevel integrated circuit chips, many of said levels having a feature size of ...
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6952026 |
A radiation detector is of the type, which by use of electric signals, which indicates the position of an irradiated point on a detector surface of the detector. The detector includes a semiconductor wafer having at least two barrier lay...
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6951802 |
A spin addition method for catalyst elements is simple and very important technique, because the minimum amount of a catalyst element necessary for crystallization can be easily added by controlling the catalyst element concentration wit...
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6951689 |
The present invention provides a substrate with a transparent conductive layer comprising at least one layer stacked on a supporting substrate, wherein the surface of the transparent conductive layer has a distribution of inclination arc...
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6911594 |
A photovoltaic device including a plurality of unit devices stacked, each unit device comprising a silicon-based non-single-crystal semiconductor material and having a pn or pin structure, in which an oxygen atom concentration and/or a c...
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6909115 |
There is disclosed a semiconductor device and a method of fabricating the semiconductor device in which a heat treatment time required for crystal growth is shortened and a process is simplified. Two catalytic element introduction region...
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6897477 |
A multi-gate structure is used and a width (d 1 ) of a high concentration impurity region sandwiched by two channel forming regions in a channel length direction is set to be shorter than a width (d 2 ) of low concentration impurity regi...
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6891192 |
A p-type field effect transistor (PFET) and an n-type field effect transistor (NFET) of an integrated circuit are provided. A first strain is applied to the channel region of the PFET but not the NFET via a lattice-mismatched semiconduct...
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6888995 |
The present invention provides a package for hermetically sealing optical fibers such that they optically communicate with other optical elements/devices. First and second substrates include one or more grooves formed in a surface for re...
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6878595 |
The present invention relates to a technique that can be used to reduce the sensitivity of integrated circuits to a failure mechanism to which some integrated circuits (ICs) are susceptible, known as latchup. The present invention relate...
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6864127 |
There are disclosed techniques for providing a simplified process sequence for fabricating a semiconductor device. The sequence starts with forming an amorphous film containing silicon. Then, an insulating film having openings is formed ...
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6861668 |
The present invention provides a simple method for forming the poly-Si and single crystalline Si TFT, which includes forming a line peninsular layer extending from an a-Si island layer at the active region. Then, a laser annealing proces...
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6833559 |
A method of precluding diffusion of a metal into adjacent chalcogenide material upon exposure to a quanta of actinic energy capable of causing diffusion of the metal into the chalcogenide material includes forming an actinic energy block...
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6833558 |
A selective and parallel growth method of carbon nanotube for electronic-spintronic device applications which directly grows a carbon nanotube on a wanted position toward a horizontal direction comprises the steps of: forming an insulati...
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6828581 |
A solution-based method for attaching metal contacts to molecular films is described. The metal contacts are attached to functional groups on individual molecules in the molecular film. The chemical state of the functional group is contr...
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6822264 |
The reliability of a light-emitting device constituted by a combination of a TFT and a light-emitting element is to be improved. A light-emitting element is formed between a first substrate and a second substrate. The light-emitting devi...
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6815269 |
A thin-film transistor is formed by a polycrystalline silicon film having a thin-film part and a thick-film part, the thin-film part minimally being used as a channel part. The polycrystalline silicon film is formed by laser annealing wi...
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6812496 |
A nitride semiconductor laser device using a group III nitride semiconductor also as a substrate offers excellent operation characteristics and a long laser oscillation life. In a layered structure of a group III nitride semiconductor fo...
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