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Document	Document Title
7473574	Memory element with improved contacts A phase-change memory element comprising a phase-change memory material, a first electrical contact and a second electrical contact. At least one of the electrical contacts having a sidewall electrically coupled to the memory material.
7470924	Phase change RAM device with increased contact area between word line and active area A phase change RAM device, has a first metal wiring for a bit line that is separated from a second metal wiring for applying a supply voltage. A method for fabricating the phase change RAM device includes the steps of forming an isolatio...
7470923	Semiconductor integrated circuit device With a high-speed nonvolatile phase change memory, reliability in respect of the number of refresh times is enhanced. In a memory cell forming area of a phase change memory using a MISFET as a transistor for selection of memory cells, a ...
7465952	Programmable non-volatile resistance switching device A memory element comprises a first number of electrodes and a second number of electrically conducting channels between sub-groups of two of said electrodes, the channels exhibiting an electrical resistance that is reversibly switchable ...
7462857	Memory device including resistance-changing function body A resistance-changing function body includes an object made of a first substance and interposed between a first electrode and a second electrode, and a plurality of particles made of a second substance and arranged within the object so t...
7459759	Magnetic random access memory A magnetic random access memory described in embodiments of the present invention comprises a conductive line, a soft magnetic material which surrounds the conductive line, a gap disposed in a part of the soft magnetic material, and a ma...
7459717	Phase change memory cell and manufacturing method A phase change memory cell includes first and second electrodes having generally coplanar surfaces spaced apart by a gap and a phase change bridge electrically coupling the first and second electrodes. The phase change bridge may extend ...
7459715	Resistance change memory device A resistance change memory device including: a semiconductor substrate; cell arrays stacked above the substrate, bit lines and word lines; a read/write circuit formed on the semiconductor substrate; first and second vertical wirings conn...
7456421	Vertical side wall active pin structures in a phase change memory and manufacturing methods A programmable resistor memory, such as a phase change memory, with a memory element comprising narrow vertical side wall active pins is described. The side wall active pins comprise a programmable resistive material, such as a phase cha...
7453082	Small electrode for a chalcogenide switching device and method for fabricating same A memory cell and a method of fabricating the memory cell having a small active area are provided. By forming a spacer in a window that is sized at the photolithographic limit, in one embodiment, a pore may be formed in dielectric layer ...
7449711	Phase-change-type semiconductor memory device A phase-change memory device includes a plurality of bit lines extending in a row direction, a plurality of selection lines extending in a column direction, and an array of memory cells each disposed at one of intersections between the b...
7449710	Vacuum jacket for phase change memory element A memory device including a phase change element and a vacuum jacket. The device includes a first electrode element; a phase change element in contact with the first electrode element; an upper electrode element in contact with the phase...
7443711	Non-volatile programmable impedance nanoscale devices Programmable impedance devices and methods of fabricating the devices are disclosed. The programmable impedance devices exhibit non-volatile tunable impedance properties. A programmable impedance device includes a first electrode, a seco...
7427770	Memory array for increased bit density A memory array having a plurality of resistance variable memory units and method for forming the same are provided. Each memory unit includes a first electrode, a resistance variable material over the first electrode, and a first second-...
7423327	Spin transistor based on the spin-filter effect and a non-volatile memory using spin transistors A spin transistor comprises a spin injector for injecting, from a first nonmagnetic electrode carriers with a spin parallel to a spin band forming the band edge of a first ferromagnetic barrier layer, to a second nonmagnetic electrode la...
7423281	Microelectronic device with a plurality of storage elements in serial connection and method of producing the same The micro electronic device comprises a substrate with a surface and a plurality of storage elements in serial connection formed at the surface of the substrate, a plurality of transistors, each transistor being connected parallel to one...
7420199	Resistivity changing memory cell having nanowire electrode A memory cell includes a first electrode comprising a nanowire, a second electrode, and phase-change material between the first electrode and the second electrode.
7414258	Spacer electrode small pin phase change memory RAM and manufacturing method A memory device comprising a first pan-shaped electrode having a side wall with a top side, a second pan-shaped electrode having a side wall with a top side and an insulating wall between the first side wall and the second side wall. The...
7402847	Programmable logic circuit and method of using same A programmable logic circuit, including programmable memory element, suitable for microprocessor applications, and a method of using the circuit are disclosed. The programmable circuit includes at least one logic cell, columns and rows o...
7402829	Structured silicon anode A silicon/lithium battery can be fabricated from a silicon substrate. This allows the battery to be produced as an integrated unit on a chip. The battery includes a silicon anode formed from sub-micron diameter pillars of silicon fabrica...
7397060	Pipe shaped phase change memory A memory cell device includes a bottom electrode, pipe shaped member comprising phase change material and a top electrode in contact with the pipe-shaped member. An electrically and thermally insulating material is inside the pipe-shaped...
7394088	Thermally contained/insulated phase change memory device and method (combined) A memory device with improved heat transfer characteristics. The device first includes a dielectric material layer; first and second electrodes, vertically separated and having mutually opposed contact surfaces. A phase change memory ele...
7394087	Phase-changeable memory devices and methods of forming the same A phase-changeable memory device includes a substrate having a contact region on an upper surface thereof. An insulating interlayer on the substrate has an opening therein, and a lower electrode is formed in the opening. The lower electr...
7393798	Resistance variable memory with temperature tolerant materials A PCRAM memory device having a chalcogenide glass layer, preferably comprising antimony selenide having a stoichometric formula of about Sb 2 Se 3 , and a metal-chalcogenide layer and methods of forming such a memory device.
7391045	Three-dimensional phase-change memory A three-dimensional phase-change memory array. In one embodiment of the invention, the memory array includes a first plurality of diodes, a second plurality of diodes disposed above the first plurality of diodes, a first plurality phase-...
7385218	Phase changeable layers including protruding portions in electrodes thereof and methods of forming same A structure in a phase changeable memory cell can include a bottom electrode having an interlayer dielectric layer thereon, the bottom electrode can have a recess therein that extends beyond a boundary between the bottom electrode and th...
7375365	Multilevel phase-change memory, manufacture method and operating method thereof A multilevel phase-change memory, manufacture method and operating method thereof are provided. The memory includes a first phase change layer, a second phase change layer, a first heating layer formed on one surface of the first phase c...
7374174	Small electrode for resistance variable devices A memory element comprising first and second electrodes is provided. The first electrode is tapered such that a first end of the first electrode is larger than a second end of the first electrode. A resistance variable material layer is ...
7365411	Resistance variable memory with temperature tolerant materials A PCRAM memory device having a chalcogenide glass layer, preferably comprising antimony selenide having a stoichiometric formula of about Sb 2 Se 3 , and a metal-chalcogenide layer and methods of forming such a memory device.
7361925	Integrated circuit having a memory including a low-k dielectric material for thermal isolation The present invention includes a memory cell device and method that includes a memory cell, a first electrode, a second electrode, phase-change material and an isolation material. The phase-change material is coupled adjacent the first e...
7358520	Semiconductor memory cell, method for fabricating it and semiconductor memory device A semiconductor memory cell, a method for fabricating it and a semiconductor memory device. A phase change material region of a storage element of the semiconductor memory cell has been or is formed as a lining region of a wall region of...
7351992	Forming nonvolatile phase change memory cell having a reduced thermal contact area The invention provides for a nonvolatile memory cell comprising a heater layer in series with a phase change material, such as a chalcogenide. Phase change is achieved in chalcogenide memories by thermal means. Concentrating thermal ener...
7348590	Phase change memory cell with high read margin at low power operation A memory cell device includes a first electrode, a heater adjacent the first electrode, phase-change material adjacent the heater, a second electrode adjacent the phase-change material, and isolation material adjacent the phase-change ma...
7339185	Phase change memory device and method for forming the same A phase change memory device includes a mold layer disposed on a substrate, a heating electrode, a filling insulation pattern and a phase change material pattern. The heating electrode is disposed in an opening exposing the substrate thr...
7335906	Phase change memory device A phase change memory device has a semiconductor substrate; a plurality of cell arrays stacked above the substrate, each cell array having a matrix of memory cells for storing resistance values as data determined by phase change of the c...
7332735	Phase change memory cell and method of formation A phase change memory element and methods for forming the same are provided. The memory element includes a first electrode and a chalcogenide comprising phase change material layer over the first electrode. A metal-chalcogenide layer is ...
7330369	NANO-electronic memory array Systems and methods are disclosed to process a semiconductor substrate by fabricating a first layer on the substrate using semiconductor fabrication techniques; fabricating a second layer above the first layer having one or more NANO-bon...
7323708	Phase change memory devices having phase change area in porous dielectric layer A phase change memory device includes a lower electrode and a porous dielectric layer having fine pores on the lower electrode. A phase change layer is provided in the fine pores of the porous dielectric layer. An upper electrode is prov...
7317200	SnSe-based limited reprogrammable cell Methods and apparatus for providing a memory device that can be programmed a limited number of times. According to exemplary embodiments, a memory device and its method of formation provide a first electrode, a second electrode and a lay...
7307269	Phase-change RAM containing AIN thermal dissipation layer and TiN electrode Provided is a phase-change RAM containing a substrate, a lower electrode, a phase-change material, an upper electrode and a thermal dissipation layer, wherein the thermal dissipation layer contains an aluminum-nitride thermal dissipation...
7307268	Structure and method for biasing phase change memory array for reliable writing A memory array having memory cells comprising a diode and a phase change material is reliably programmed by maintaining all unselected memory cells in a reverse biased state. Thus leakage is low and assurance is high that no unselected m...
7294856	Electro-optical device and electronic apparatus To provide an electro-optical device comprising a thin film having a uniform thickness, which is formed by drying liquid droplets filled in a liquid droplet ejection region surrounded by a partition. An electro-optical device comprises p...
7291857	Non-volatile memory A non-volatile memory ( 1 ) which comprises an insulating substrate ( 11 ) having a plurality of first electrodes ( 15 ) extending therethrough from a front surface of the substrate to a rear surface thereof, a second electrode ( 12 ) fo...
7288781	Programmable structure, an array including the structure, and methods of forming the same A microelectronic programmable structure suitable for storing information, and array including the structure and methods of forming and programming the structure are disclosed. The programmable structure generally includes an ion conduct...
7271403	Isolating phase change memory devices A phase change memory may be made using an isolation diode in the form of a Schottky diode between a memory cell and a word line. The use of Schottky diode isolation devices may make the memory more scaleable in some embodiments.
7262427	Structure for phase change memory and the method of forming same A phase change device includes a first contact electrode structure a phase change material and a first insulating material between the phase change material and the first contact electrode structure and a second contact electrode in cont...
7244956	Self-aligned process for manufacturing a phase change memory cell and phase change memory cell thereby manufactured A process for manufacturing a phase change memory cell, comprising the steps of: forming a resistive element; forming a delimiting structure having an aperture over the resistive element; forming a memory portion of a phase change materi...
7238959	Phase change memory device employing thermally insulating voids and sloped trench, and a method of making same A phase change memory device, and method of making the same, that includes a trench formed in insulation material having opposing sidewalls that are inwardly sloping with trench depth. A first electrode is formed in the trench. Phase cha...
7233054	Phase change material and non-volatile memory device using the same The present invention provides a phase change memory cell comprising (Ge A Sb B Te C ) 1-X (R a S b Te C ) X solid solution, the solid solution being formed from a Ge—Sb—Te based alloy and a ternary metal alloy R—S—Te sharing sa...
7233017	Multibit phase change memory device and method of driving the same A multibit phase change memory device structured such that a plurality of individual phase change memory devices are aligned in a plan area or vertically, and a method of driving the same are provided. The multibit phase change memory de...

Matches 1 - 50 out of 166	1 2 3 4 >