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Document Title |
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7456567 |
An organic electroluminescent device having a pair of electrodes, and at least one organic layer interposed between the pair of electrodes, with the organic layer containing at least one compound represented by formula (1):
wher...
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7446335 |
Methods and apparatus for producing nanoparticles, including single-crystal semiconductor nanoparticles, are provided. The methods include the step of generating a constricted radiofrequency plasma in the presence of a precursor gas cont...
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7442448 |
The present invention relates to emitting compounds for organic electroluminescent device, particularly to phenyl pyridine-iridium metal complex compounds represented by the following formula (1):
wherein R 1 to R 8 , A 1 to A...
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7342266 |
A field effect transistor (FET) device includes a gate conductor and gate dielectric formed over an active device area of a semiconductor substrate. A drain region is formed in the active device area of the semiconductor substrate, on on...
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7316949 |
At least a p-type and n-type semiconductor device deposited upon a semiconductor wafer containing metal or metal alloy gates. More particularly, a complementary metal-oxide-semiconductor (CMOS) device is formed on a semiconductor wafer h...
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7294518 |
The present invention provides a photoresist stripper including about 5 wt % to about 20 wt % alcohol amine, about 40 wt % to about 70 wt % glycol ether, about 20 wt % to about 40 wt % N-methyl pyrrolidone, and about 0.2 wt % to about 6 ...
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7288787 |
The present invention provides a thin-film transistor offering a higher electron (or hole) mobility, a method for manufacturing the thin-film transistor, and a display using the thin-film transistor. The present invention provides a thin...
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7274050 |
Apparatus, packaging, and methods of manufacture of an integrated circuit are provided. The integrated circuit includes a component of a first type fabricated on a first substrate containing a first material, and a component of a second ...
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7262464 |
A semiconductor device includes a substrate with an insulating surface and a single crystal semiconductor layer, which is bonded to the insulating surface of the substrate. The device further includes a first insulating layer, which is p...
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7259427 |
The present invention relates to a semiconductor device including a circuit composed of thin film transistors having a novel GOLD (Gate-Overlapped LDD (Lightly Doped Drain)) structure. The thin film transistor comprises a first gate elec...
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7241652 |
Disclosed herein is a method for fabricating an organic thin film transistor that includes a gate electrode, a gate insulating film, source/drain electrodes and an organic semiconductor layer formed in this order on a substrate wherein t...
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7221023 |
According to some embodiments of the invention, a method includes preparing a semiconductor substrate having an active region, doping channel ions in the active region, forming a planarized selective epitaxial growth (SEG) layer in a pre...
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7198967 |
There is provided an active matrix type semiconductor display device which realizes low power consumption and high reliability. In the active matrix type semiconductor display device of the present invention, a counter electrode is divid...
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7176479 |
A nitride compound semiconductor element having improved characteristics, productivity and yield. A nitride compound semiconductor element includes: a sapphire substrate; a first single crystalline layer of AlN formed on said sapphire su...
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7154121 |
A light emitting device includes a micro-reflection structure carrier, which is formed by performing etching process on a carrier, a reflection layer, a light emitting layer, and a transparent adhesive layer, wherein the reflection layer...
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7151277 |
A method of etching silicon carbide using a nonmetallic mask layer. The method includes providing a silicon carbide substrate; forming a non-metallic mask layer by applying a layer of material on the substrate; patterning the mask layer ...
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7145180 |
In the fabricating of a light emitting device, a light emitting layer portion 24 and a current spreading layer 7, respectively composed of a Group III-V compound semiconductor, are stacked on a single crystal substrate. The light emi...
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7132677 |
An GaN light emitting diode (LED) having a nanorod (or, nanowire) structure is disclosed. The GaN LED employs GaN nanorods in which a n-type GaN nanorod, an InGaN quantum well and a p-type GaN nanorod are subsequently formed in a longitu...
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7129123 |
In a method for producing an SOI wafer comprising steps of implanting ions from a bond wafer surface to form an ion-implanted layer inside the wafer, bonding the ion-implanted bond wafer surface and a surface of a base wafer via an oxide...
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7122864 |
A semiconductor substrate is disclosed which comprises a first single crystal silicon layer, an insulator formed to partially cover one main surface of the first single crystal silicon layer, a second single crystal silicon layer formed ...
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7109528 |
With a solar ball 10 serving as a light-receiving semiconductor apparatus, the outer surface of a spherical solar cell 1 is covered with a light-transmitting outer shell member 11 , and electrode members 14, 15 are connected to el...
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7105866 |
High quality epitaxial layers of compound semiconductor materials can be grown overlying large silicon wafers by first growing an accommodating buffer layer on a silicon wafer. The accommodating buffer layer is a layer of monocrystalline...
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7098498 |
Hot-electron injection driven by hole impact ionization in the channel-to-drain junction of a p-channel MOSFET provides a new mechanism for writing a floating-gate memory. Various pFET floating-gate structures use a combination of this m...
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7078727 |
Nickel is selectively held in contact with a particular region of an amorphous silicon film. Crystal growth parallel with a substrate is effected by performing a heat treatment. A thermal oxidation film is formed on the silicon film by p...
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7074630 |
A light emitting layer including a quantum structure and the forming method of forming the same is provided. The forming method includes several steps. At first, a compound dielectric layer forms, including a dielectric layer and an impu...
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7005676 |
There is here disclosed a semiconductor device manufacturing method comprising a step of forming an island region including a monocrystalline Si 1-x-y Ge x C y layer (1>x>0, 1>y≧0) and a peripheral region including an amorpho...
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6982195 |
An amorphous silicon layer is formed on a substrate, and then a protective layer and a reflective layer are formed in turn to form a film stack on portions of the amorphous silicon layer. The reflective layer is a metal material with ref...
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6914307 |
A semiconductor device includes a semiconductor layer, a plurality of semiconductor elements formed on the semiconductor layer, and an isolation film provided in a surface of the semiconductor layer, semiconductor elements being electric...
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6909115 |
There is disclosed a semiconductor device and a method of fabricating the semiconductor device in which a heat treatment time required for crystal growth is shortened and a process is simplified. Two catalytic element introduction region...
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6903967 |
A memory having gate structures adjacent opposing sidewalls of a semiconductor structure including a channel region and a plurality of charge storage locations between the gate structures and the opposing sidewalls. The channel region is...
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6903367 |
Various embodiments provide a decoder for a memory array, comprising an array of address and output lines, vertical pillars, vertical floating gate transistors, and buried source lines. Each pillar includes single crystalline first and s...
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6864520 |
A method (and structure) for an electronic chip having at least one layer of material for which a carrier mobility of a first carrier type is higher in a first crystal surface than in a second crystal surface and for which a carrier mobi...
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6825491 |
The present invention concerns an integrated variable capacitance device comprising at least one membrane ( 12 ) forming at least one mobile armature and having at least one principal face facing at least one fixed armature. In accordanc...
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6812490 |
The present invention provide an LDD type TFT having excellent properties, particularly for a liquid crystal display unit. For this purpose, a top gate type LDDTFT gate electrode is converted into a two-stage structure by use of a chemic...
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6809012 |
The present invention is characterized in that gettering is performed such that impurity regions to which a noble gas element is added are formed in a semiconductor film and the metallic element included in the semiconductor film is segr...
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6765229 |
A silicon film provided on a blocking film 102 on a substrate 101 is made amorphous by doping Si+, and in a heat-annealing process, crystallization is started in parallel to a substrate from an area 100 where nickel serving as a cr...
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6734499 |
An insulated gate field effect transistor comprises a non-single-crystalline semiconductor layer formed on a substrate, a gate electrode is formed on a portion of the surface of said semiconductor layer, and a gate insulating film is dis...
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6720575 |
An insulating film 103 for making an under insulating layer 104 is formed on a quartz or semiconductor substrate 100 . Recesses 105 a to 105 d corresponding to recesses 101 a to 101 d of the substrate 100 are formed on the...
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6717178 |
A thin film transistor includes an active silicon layer deposited by physical vapor deposition (PVD), wherein a silicon precursor is doped with impurities prior to use as a target in the PVD chamber, wherein the precursor has a resistivi...
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6713819 |
An integrated circuit formed in semiconductor-on-insulator format. The integrated circuit includes a layer of semiconductor material disposed on an insulating layer, where the insulating layer disposed on a substrate. A first and a secon...
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6700133 |
A film having a high thermal conductivity material such as aluminum nitride is formed on a substrate, and then a silicon film is formed. When a laser light or an intense light corresponding to the laser light is irradiated to the silicon...
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6680487 |
There is disclosed a semiconductor device and a method of fabricating the semiconductor device in which a heat time required for crystal growth is shortened and a process is simplified. Two catalytic element introduction regions are arra...
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6664806 |
A decoder for a memory device is provided. The decoder array includes a number of address lines and a number of output lines. The address lines and the output lines form an array. The decoder includes a number of vertical pillars extendi...
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6664566 |
A photoelectric conversion device has a non-single-crystal semiconductor laminate member formed on a substrate having a conductive surface, and a conductive layer formed on the non-single-crystal semiconductor laminate member. The non-si...
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6627919 |
A thermally stable nickel germanosilicide on SiGe integrated circuit device, and a method of making the same, is disclosed. During fabrication of the device iridium or cobalt is added at the Ni/SiGe interface to decrease the sheet resist...
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6605840 |
The scalable multi-bit flash memory cell includes three regions: the first-side region, the gate region, and the second-side region, in which the gate region includes two stack-gate transistors and one select-gate transistor. The first-s...
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6566682 |
Structures and method for programmable memory address and decode circuits with ultra thin vertical body transistors are provided. The memory address and decode circuits includes a number of address lines and a number of output lines such...
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6548370 |
A laser annealing method for obtaining a crystalline semiconductor film having a large grain size is provided. Laser light is irradiated to the top surface and the bottom surface of an amorphous semiconductor film when crystallizing the ...
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6538268 |
A semiconductor device has a MOSFET formed on a single crystalline silicon layer in an SOI structure in which the silicon layer is laminated along with an insulator on a handle wafer. To prevent the body floating effect, a recombination ...
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6531710 |
An ULSI MOSFET formed using silicon on insulator (SOI) principles includes masking regions of an amorphous silicon film on a substrate and exposing intended active regions. Laser energy is directed against the intended active regions to ...
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