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Document	Document Title
RE39780	Photoelectric converter, its driving method, and system including the photoelectric converter A photoelectric converter of a high signal-to-noise ratio, low cost, high productivity and stable characteristics and a system including the above photoelectric converter. The photoelectric converter includes a photoelectric converting p...
7214971	Semiconductor light-receiving device A semiconductor light-receiving device has a substrate including upper, middle and lower regions in its front side. A p-type layer on the lower region has a top surface including a portion on a level with the middle region. An electrode ...
7202511	Near-infrared visible light photon counter Electromagnetic energy is detected with high efficiency in the spectral range having wavelengths of about 1–2 microns by coupling an absorber layer having high quantum efficiency in the spectral range having wavelengths of about 1–2 ...
7202181	Etching of substrates of light emitting devices Fabrication of a light emitting device includes etching of a substrate of the light emitting device. The etch may be an aqueous etch sufficient to increase an amount of light extracted through the substrate. The etch may be a direct aque...
7115925	Image sensor and pixel having an optimized floating diffusion An active pixel includes a a photosensitive element formed in a semiconductor substrate. A transfer transistor is formed between the photosensitive element and a floating diffusion and selectively operative to transfer a signal from the ...
7102185	Lightshield architecture for interline transfer image sensors An interline transfer type image sensing device that can be operated at high speed and with low image smear is described. The device incorporates a refractory metal layer which is used for both a light shield over the vertical charge tra...
6984843	Board for electronic device, electronic device, ferroelectric memory, electronic apparatus, ink-jet recording head, and ink-jet printer A board for an electronic device is provide comprising a substrate having an amorphous layer, a buffer layer formed on the amorphous layer, the buffer layer having an orientation at least in the direction of its thickness, and a conducti...
6929987	Microelectronic device fabrication method In a method of forming a semiconductor device with a first channel layer formed over a portion of a second channel layer, a portion of the second channel underlying the first channel is etched so as to form an overhanging ledge in the fi...
6774451	Mos transistor for high density integration circuits This invention relates to a MOS transistor made in the thin film of silicon of an SOI chip ( 10 ), said thin film ( 13 ) being slightly doped and of less than 30 nm in thickness, the source ( 14 ) and drain ( 15 ) contacts being of the S...
6770912	Semiconductor device and method for producing the same A semiconductor device includes a SiC substrate and an ohmic electrode, a semiconductor member including a SiC member and a SiGe member being formed between the SiC substrate and the ohmic electrode, wherein the semiconductor member is c...
6670657	Integrated circuit having photodiode device and associated fabrication process An integrated circuit is provided that includes a substrate incorporating a semiconductor photodiode device having a p-n junction. The photodiode device includes at least one capacitive trench buried in the substrate and connected in par...
6603453	Semiconductor device and method for manufacturing the same There is provided a semiconductor device having TFTs whose thresholds can be controlled. There is provided a semiconductor device including a plurality of TFTs having a back gate electrode, a first gate insulation film, a semiconductor ...
6512279	Photoelectric converter, its driving method, and system including the photoelectric converter A photoelectric converter of a high signal-to-noise ratio, low cost, high productivity and stable characteristics and a system including the above photoelectric converter. The photoelectric converter includes a photoelectric converting p...
6503771	Semiconductor photoelectrically sensitive device A semiconductor device including a conductive substrate or a first conductive layer formed on the substrate, a non-single-crystal semiconductor layer member is disposed on the conductive substrate or the conductive layer, the non-single-...
6426542	Schottky diode with dielectric trench An improved diode or rectifier structure and method of fabrication is disclosed involving the incorporation in a Schottky rectifier, or the like, of a dielectric filled isolation trench structure formed in the epitaxial layer adjacent th...
6346716	Semiconductor material having particular oxygen concentration and semiconductor device comprising the same A photoelectric conversion device has a non-single-crystal semiconductor laminate member formed on a substrate having a conductive surface, and a conductive layer formed on the non-single-crystal semiconductor laminate member. The non-si...
6215154	Thin film transistor and method of fabricating the same A thin film transistor (TFT) which may be used as a pixel drive element in an active matrix LCD display includes a pair of side wall spacers adjacent to the opposing side walls of its gate electrode. The side wall spacers provide the gat...
6093660	Inductively coupled plasma chemical vapor deposition technology Disclosed is an inductively coupled plasma chemical vapor deposition method for depositing a selected thin film on a substrate from inductively coupled plasma, the method including the steps of: providing a vacuum reaction chamber includ...
6080997	Electromagnetic-wave detector An electromagnetic-wave detector having an electromagnetic-wave detection unit having the structure that M (M≥1) contiguous pairs of a metallic layer and an insulating layer are provided at the side of incidence of an electromagnetic-w...
6075256	Photoelectric converter, its driving method, and system including the photoelectric converter A photoelectric converter of a high signal-to-noise ratio, low cost, high productivity and stable characteristics and a system including the above photoelectric converter. The photoelectric converter includes a photoelectric converting p...
6037644	Semi-transparent monitor detector for surface emitting light emitting devices A structure for providing direct feedback of power emitted by a surface emitting light emitting device and the subsequent optical power control of the device is disclosed. In a preferred embodiment, an array of vertical cavity surface em...
6031247	Liquid crystal display A liquid crystal display having a TFT cell array including a plurality of gate lines formed in parallel on a substrate and a plurality of data lines formed perpendicularly to the gate lines. The plurality of gate lines have gate pads at ...
5990490	Optical electronic IC capable of photo detection An optical-electronic integrated circuit combining photo detection with an integrated circuit is provided where a light signal input thereto can be directly translated into an electronic signal. The electronic signal can be received and ...
5973335	Semiconductor memory devices with amorphous silicon alloy A semiconductor memory device includes first and second conductive contact layers (12, 15) and an hydrogenated, silicon-rich, amorphous silicon alloy layer (14), particularly an amorphous silicon nitride or amorphous silicon carbide allo...
5942049	Increasing stabilized performance of amorphous silicon based devices produced by highly hydrogen diluted lower temperature plasma deposition High quality, stable photovoltaic and electronic amorphous silicon devices which effectively resist light-induced degradation and current-induced degradation, are produced by a special plasma deposition process. Powerful, efficient singl...
5821558	Antifuse structures An antifuse structure includes a first electrode, a layer of enhanced amorphous silicon over the first electrode, and a second electrode over the layer of enhanced amorphous silicon. The layer of enhanced amorphous silicon is formed by a...
5814832	Electron emitting semiconductor device An electron emitting semiconductor device is provided with a P-type semiconductor layer arranged on a semiconductor substrate having an impurity concentration. A Schottky barrier electrode is arranged on a surface of the P-type semicondu...
5562781	Amorphous, hydrogenated carbon (a-C:H) photovoltaic cell A photovoltaic cell comprising a plurality of film layers, at least one of the layers being a semiconductor film of amorphous, hydrogenated carbon. The preferred embodiment comprises a plurality of semiconductor films sandwiched together...
5543634	Method of forming semiconductor materials and barriers In a gaseous glow-discharge process for coating a substrate with semiconductor material, a variable electric field in the region of the substrate and the pressure of the gaseous material are controlled to produce a uniform coating having...
5521400	Semiconductor photoelectrically sensitive device with low sodium concentration A semiconductor device including a conductive substrate or a first conductive layer formed on the substrate, a non-single-crystal semiconductor layer member is disposed on the conductive substrate or the conductive layer, the non-single-...
5449924	Photodiode having a Schottky barrier formed on the lower metallic electrode A photodiode capable of obtaining a sufficient photo current/dark ratio at both a forward bias state and a reverse bias state. The photodiode includes a glass substrate, an aluminum film formed as a lower electrode over the glass substra...
5449923	Amorphous silicon color detector An amorphous silicon color detector comprising a structure composed of a transparent conductive oxide film (TCO) layer/an a-Si:H layer/a metal layer, of which the a-Si:H layer is an amorphous silicone layer having a thickness greater tha...
5442205	Semiconductor heterostructure devices with strained semiconductor layers A heterostructure includes a stained epitaxial layer of either silicon or germanium that is located overlying a silicon substrate, with a spatially graded Ge x Si 1 -x epitaxial layer overlain by a ungraded Ge x s Si 1-x<1ux>s interve...
5336905	Semiconductor device having an insulating substrate and Schottky diodes Semiconductor device and method of manufacturing same, display device and support plate for same provided with such a semiconductor device. A semiconductor device having an insulating substrate on which a Schottky diode is formed between...
5301048	Active matrix display device with Schottky contact switching elements By arranging a Schottky diode so that it is sensitive to grazing light only in the back-bias mode, a switching element is obtained which, when used in, for example an active matrix LCD display, has a current-voltage characteristic which ...
5138191	Photoemitter A junction, such as a Schottky junction, is formed between a conductive electrode and a semiconductor. A bias voltage is applied between the conductive electrode and an outward-emission-side electrode formed on the semiconductor at the s...
5083171	Image sensor In an image sensor, photoelectric transducers each consisting of a pair of a photodiode and a blocking diode, each of which has a semiconductor layer of an amorphous silicon thin film and two opposing electrodes sandwiching the semicondu...
5073804	Method of forming semiconductor materials and barriers In a gaseous glow-discharge process for coating a substrate with semiconductor material, a variable electric field in the region of the substrate and the pressure of the gaseous material are controlled to produce a uniform coating having...
4999693	Photoelectric conversion device with a high response speed An improved photoelectric conversion device is shown. The device includes a plurality of photoelectric semiconductor elements each of which are composed of a first electrode and a semiconductor layer and a second electrode. The opposed s...
4990988	Laterally stacked Schottky diodes for infrared sensor applications Laterally stacked Schottky diodes (25) for infrared sensor applications are fabricated utilizing porous silicon (10) having pores (12). A Schottky metal contact (24) is formed in the pores, such as by electroplating. The sensors may be i...
4982246	Schottky photodiode with silicide layer A Schottky photodiode formed by the method including the steps of: forming a base electrode on the principal substrate surface; depositing a layer of N+ amorphous silicon on the base electrode; depositing a layer of intrinsic silicon on ...
4977304	Linear solid state image sensor A linear solid-state image sensor includes a first chip and a second chip, each of the first and second chips having a long substrate, a plural number of photo-responsive elements formed in a line on the substrate, an analog switch circu...
4965655	Interconnected semiconductor devices Semiconductor layer and conductive layer formed on a flexible substrate, divided into individual devices and interconnected with one another in series by interconnection layers and penetrating terminals.
4965212	Optical sensor A photosensitive diode element and method of manufacture. The diode element is comprised of a first layer of n-type hydrogenated amorphous-silicon forming a cathode, and a second layer of p+ type material forming an anode, the second lay...
4937651	Semiconductor device free from the current leakage through a semiconductor layer and method for manufacturing same An improved semiconductor device is disclosed which is free from current leakage due to pin-holes or other gaps. Also an improved method for processing a semiconductor device is shown. According to the invention, gaps produced in fabrica...
4896200	Novel semiconductor-based radiation detector A semiconductor-based radiation detector comprising a semiconductor substrate and an amorphous semiconductor layer formed on one surface of the substrate, one electrode being applied to the substrate and one to the amorphous layer, the e...
4891074	Multiple cell photoresponsive amorphous alloys and devices The production of improved multiple cell photoresponsive amorphous devices, such as photovoltaic, photoreceptive devices and the like; having improved wavelength threshold characteristics is made possible by adding one or more band gap a...
4876585	Contact type image sensor with separate charge transfer device An image sensor includes a charge transfer device such as CCD and BBD which is utilized as a switching element for reading signals. In the case where the charge transfer device is formed on a P-type semiconductor substrate, electric pote...
4845375	Contact photoelectric conversion apparatus having plurality of protecting layers A photoelectric conversion apparatus comprises an insulating and transparent substrate, a plurality of photoelectric conversion elements formed on the substrate in a line, selection switches made up of thin film transistors formed on the...
4837177	Method of making bipolar semiconductor device having a conductive recombination layer A semiconductor device having a conductive recombination layer. The conductive recombination layer, comprised of doped polycrystalline material, doped polycrystalline material and tungsten silicide, or tungsten silicide, is disposed betw...

Matches 1 - 50 out of 74	1 2 >