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Document	Document Title
7420207	Photo-detecting device and related method of formation A photo-detecting device includes a buried doping layer of a first conductivity type and disposed at an upper portion of a silicon substrate. A first silicon epitaxial layer of first conductivity type is disposed on the buried doping lay...
7417248	Transistor with shallow germanium implantation region in channel A method of manufacturing a transistor and a structure thereof, wherein a very shallow region having a high dopant concentration of germanium is implanted into a channel region of a transistor at a low energy level, forming an amorphous ...
7361420	Structure, magnetic recording medium, and method of producing the same To provide a filmy structure of a nanometer size having a phase-separated structure effective for the case where a compound can be formed between two kinds of materials. A structure constituted by a first member containing a compound bet...
7339188	Polycrystalline silicon film containing Ni The present invention is related to a polycrystalline silicon film containing Ni which is formed by crystallizing an amorphous silicon layer containing nickel. The present invention includes a polycrystalline silicon film wherein the pol...
7335950	Semiconductor device and method of making thereof To provide a thin film transistor having a low OFF characteristic and to provide P-channel type and N-channel type thin film transistors where a difference in characteristics of the P-channel type and the N-channel type thin film transis...
7303949	High performance stress-enhanced MOSFETs using Si:C and SiGe epitaxial source/drain and method of manufacture A semiconductor device and method of manufacturing a semiconductor device. The semiconductor device includes channels for a pFET and an nFET. A SiGe layer is selectively grown in the source and drain regions of the pFET channel and a Si:...
7271333	Apparatus and method of production of thin film photovoltaic modules The present invention relates to light-weight thin-film photovoltaic cells, methods for making cells, modules made from cells, and methods for making modules from cells. The invention teaches a manner in which individual cells may be bon...
7262428	Strained Si/SiGe/SOI islands and processes of making same A process of making a strained silicon-on-insulator structure is disclosed. A recess is formed in a substrate to laterally isolate an active area. An undercutting etch forms a bubble recess under the active area to partially vertically i...
7214971	Semiconductor light-receiving device A semiconductor light-receiving device has a substrate including upper, middle and lower regions in its front side. A p-type layer on the lower region has a top surface including a portion on a level with the middle region. An electrode ...
7202511	Near-infrared visible light photon counter Electromagnetic energy is detected with high efficiency in the spectral range having wavelengths of about 1–2 microns by coupling an absorber layer having high quantum efficiency in the spectral range having wavelengths of about 1–2 ...
7196351	Forming phase change memories Phase change memories may exhibit improved properties and lower cost in some cases by forming the phase change material layers in a planar configuration. A heater may be provided below the phase change material layers to appropriately he...
7176504	SiGe MOSFET with an erosion preventing Six1Gey1 layer A semiconductor device is provided. The semiconductor device comprises a substrate, a gate structure, a spacer, a Si x Ge y layer and a Si x Ge y protection layer. The gate structure is deposited on the substrate and the spacer is depo...
7164150	Photovoltaic device and manufacturing method thereof In a photovoltaic device of the present invention, junction characteristics are improved by enhancing interface characteristics between a crystalline silicon semiconductor and an amorphous silicon semiconductor. In the photovoltaic devic...
7157349	Method of manufacturing a semiconductor device with field isolation regions consisting of grooves filled with isolation material A method of manufacturing a semiconductor device comprising a silicon body ( 1 ) having a surface ( 4 ) provided with field isolation regions ( 2 ) enclosing active regions ( 3 ). In this method, on the surface of the silicon body there ...
7145175	Semiconductor circuit and method of fabricating the same According to the invention, a plurality of semiconductor devices which are required to have conformance are formed from crystalline semiconductor films having uniform crystallinity on the same line, and a semiconductor circuit in which v...
7138668	Heterojunction diode with reduced leakage current An aspect of the present invention provides a semiconductor device that includes a first semiconductor region of a first conductivity type and a second semiconductor region of a second conductivity type, having a different band gap from ...
7115925	Image sensor and pixel having an optimized floating diffusion An active pixel includes a a photosensitive element formed in a semiconductor substrate. A transfer transistor is formed between the photosensitive element and a floating diffusion and selectively operative to transfer a signal from the ...
7102185	Lightshield architecture for interline transfer image sensors An interline transfer type image sensing device that can be operated at high speed and with low image smear is described. The device incorporates a refractory metal layer which is used for both a light shield over the vertical charge tra...
7015507	Thin film transistor and method of fabricating the same Provided is a non-single-crystal germanium thin film transistor having a gate insulating film capable of reducing the interface state density between an active layer and the gate insulating film. This thin film transistor has an active l...
6984847	Dual panel type organic electroluminescent device and method of fabricating the same An organic electroluminescent device includes first and second substrates facing and spaced apart from each other; a gate line on an inner surface of the first substrate; a semiconductor layer over the gate line, the semiconductor layer ...
6960789	Layout of a thin film transistor and the forming method thereof A transistor that at least has one of the following characteristics: First, the gate electrode is located outside the gate line, such that the whole transistor is located outside the gate line. Second, the projection of the semiconductor...
6951689	Substrate with transparent conductive layer, and photovoltaic element The present invention provides a substrate with a transparent conductive layer comprising at least one layer stacked on a supporting substrate, wherein the surface of the transparent conductive layer has a distribution of inclination arc...
6940089	Semiconductor device structure A method of fabricating a semiconductor structure. According to one aspect of the invention, on a first semiconductor substrate, a first compositionally graded Si 1-x Ge x buffer is deposited where the Ge composition x is increasing fro...
6930326	Semiconductor circuit and method of fabricating the same According to the invention, a plurality of semiconductor devices which are required to have conformance are formed from crystalline semiconductor films having uniform crystallinity on the same line, and a semiconductor circuit in which v...
6927417	Photoelectric conversion element and method of manufacturing the same In a back-surface electrode type photoelectric conversion element having electrodes and semiconductor layers for collecting carriers disposed only on a back surface side of a semiconductor substrate, a semiconductor thin film that is lar...
6921914	Process for producing semiconductor article using graded epitaxial growth A process for producing monocrystalline semiconductor layers. In an exemplary embodiment, a graded Si 1-x Ge x (x increases from 0 to y) is deposited on a first silicon substrate, followed by deposition of a relaxed Si 1-y Ge y layer, ...
6903372	Semiconductor device, method of making the same and liquid crystal display device To provide TFT of improved low-temperature polycrystalline layer that has higher electron mobility and assures less fluctuation in manufacture in view of realizing a liquid-crystal display device having a large display area by utilizing ...
6872972	Method for forming silicon film with changing grain size by thermal process Roughly described, a silicon layer transitions from polysilicon at one surface to amorphous silicon at the opposite surface. The transition can be monotonic, and can be either continuous or it can change abruptly from polysilicon to amor...
6856002	Graded GexSe100-x concentration in PCRAM The present invention provides a design for a PCRAM element which incorporates multiple metal-containing germanium-selenide glass layers of diverse stoichiometries. The present invention also provides a method of fabricating the disclose...
6838713	Dual-height cell with variable width power rail architecture A standard cell architecture with a basic cell that spans multiple rows of the standard cell. This multi-row basic cell may be a dual-height cell that spans two rows, or it may span more than two rows. The multi-row basic cell may be int...
6838695	CMOS device structure with improved PFET gate electrode A semiconductor device structure includes a substrate, a dielectric layer disposed on the substrate, first and second stacks disposed on the dielectric layer. The first stack includes a first silicon layer disposed on the dielectric laye...
6831333	Semiconductor device and method of making thereof To provide a thin film transistor having a low OFF characteristic and to provide P-channel type and N-channel type thin film transistors where a difference in characteristics of the P-channel type and the N-channel type thin film transis...
6815802	Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology A SiGe bipolar transistor containing substantially no dislocation defects present between the emitter and collector region and a method of forming the same are provided. The SiGe bipolar transistor includes a collector region of a first ...
6787793	Strained Si device with first SiGe layer with higher Ge concentration being relaxed to have substantially same lattice constant as second SiGe layer with lower Ge concentration A semiconductor device comprises a first Si 1−α Ge α film, a first cap film, a second Si 1−β Ge β film (β<α≦1) and a second cap film formed in this order on a substrate whose surface is formed of silicon, wherein the fir...
6770912	Semiconductor device and method for producing the same A semiconductor device includes a SiC substrate and an ohmic electrode, a semiconductor member including a SiC member and a SiGe member being formed between the SiC substrate and the ohmic electrode, wherein the semiconductor member is c...
6759712	Semiconductor-on-insulator thin film transistor constructions The invention includes SOI thin film transistor constructions, memory devices, computer systems, and methods of forming various structures, devices and systems. The structures typically comprise a thin crystalline layer of silicon/german...
6750394	Thin-film solar cell and its manufacturing method A thin-film solar cell comprises a set of a transparent conductive layer and a photoelectric conversion layer laminated in this order on a substrate, wherein the photoelectric conversion layer is made of a p-i-n junction, the i-layer is ...
6734499	Operation method of semiconductor devices An insulated gate field effect transistor comprises a non-single-crystalline semiconductor layer formed on a substrate, a gate electrode is formed on a portion of the surface of said semiconductor layer, and a gate insulating film is dis...
6734455	Agglomeration elimination for metal sputter deposition of chalcogenides A method for fabricating chalcogenide materials on substrates, which reduces and/or eliminates agglomeration of materials on the chalcogenide materials; and system and devices for performing the method, semiconductor devices so produced,...
6720583	Optical device, surface emitting type device and method for manufacturing the same The present invention provides an optical device and a surface emitting type device which have high efficiency and a stable operation and are manufactured at high manufacturing yield. The optical device and the surface emitting type devi...
6710382	Semiconductor device and method for fabricating the same A silicon germanium layer is deposited over a semiconductor substrate with a gate insulating film interposed between the substrate and the silicon germanium layer. Then, an upper silicon layer in an amorphous state is deposited on the si...
6690072	Method and structure for ultra-low contact resistance CMOS formed by vertically self-aligned CoSi2 on raised source drain Si/SiGe device A method (and structure) of forming a vertically-self-aligned silicide contact to an underlying SiGe layer, includes forming a layer of silicon of a first predetermined thickness on the SiGe layer and forming a layer of metal on the sili...
6690026	Method of fabricating a three-dimensional array of active media An apparatus comprising control circuitry formed on a substrate, and a plurality of active media coupled to the control circuitry and formed in a plurality of planes over the substrate. A method comprising forming a pair of junction regi...
6670687	Semiconductor device having silicon carbide layer of predetermined conductivity type and module device having the same A semiconductor device having a silicon carbide layer of a singular conductivity type. The silicon carbide layer includes a surface having a first region, a second region, and a third region sandwiched between the first region and the se...
6670657	Integrated circuit having photodiode device and associated fabrication process An integrated circuit is provided that includes a substrate incorporating a semiconductor photodiode device having a p-n junction. The photodiode device includes at least one capacitive trench buried in the substrate and connected in par...
6670638	Liquid crystal display element and method of manufacturing the same Disclosed is a polysilicon film adapted for use in a liquid crystal display, and method of manufacturing such film. In manufacturing the film, a native oxide layer formed on a surface of an amorphous silicon film is completely removed by...
6667240	Method and apparatus for forming deposited film A method for forming a deposited film, comprising generating plasma in a plurality of successive vacuum containers and continuously forming a deposited film on a belt-like substrate while continuously moving the substrate in its longitud...
6664566	Photoelectric conversion device and method of making the same A photoelectric conversion device has a non-single-crystal semiconductor laminate member formed on a substrate having a conductive surface, and a conductive layer formed on the non-single-crystal semiconductor laminate member. The non-si...
6621131	Semiconductor transistor having a stressed channel A process is described for manufacturing an improved PMOS semiconductor transistor. Recesses are etched into a layer of epitaxial silicon. Source and drain films are deposited in the recesses. The source and drain films are made of an al...
6562703	Molecular hydrogen implantation method for forming a relaxed silicon germanium layer with high germanium content A method is provided for forming a relaxed silicon germanium layer with a high germanium content on a silicon substrate. The method comprises: depositing a single-crystal silicon (Si) buffer layer overlying the silicon substrate; deposit...

Matches 1 - 50 out of 213	1 2 3 4 5 >