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7352044 |
A solar battery 10 comprises a metal electrode layer 12 , a pin junction 100 , and a transparent electrode layer 16 which are successively laminated on a substrate 11 such as a silicon substrate. The pin junction 100 comprises ...
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7335950 |
To provide a thin film transistor having a low OFF characteristic and to provide P-channel type and N-channel type thin film transistors where a difference in characteristics of the P-channel type and the N-channel type thin film transis...
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7279370 |
A thin film transistor array substrate device includes a gate line formed on a substrate, a data line crossing the gate line with a gate insulating pattern position therebetween, a thin film transistor at a crossing of the gate line and ...
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7202511 |
Electromagnetic energy is detected with high efficiency in the spectral range having wavelengths of about 1–2 microns by coupling an absorber layer having high quantum efficiency in the spectral range having wavelengths of about 1–2 ...
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7145175 |
According to the invention, a plurality of semiconductor devices which are required to have conformance are formed from crystalline semiconductor films having uniform crystallinity on the same line, and a semiconductor circuit in which v...
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7115925 |
An active pixel includes a a photosensitive element formed in a semiconductor substrate. A transfer transistor is formed between the photosensitive element and a floating diffusion and selectively operative to transfer a signal from the ...
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7112545 |
The surface of a semiconductor material, e.g., gallium arsenide, is passivated by irradiating the surface with ultra-short laser pulses, until a stable passive surface is achieved. The passive surface so prepared is devoid of a superfici...
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7102185 |
An interline transfer type image sensing device that can be operated at high speed and with low image smear is described. The device incorporates a refractory metal layer which is used for both a light shield over the vertical charge tra...
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7038238 |
A semiconductor device including a conductive substrate or a first conductive layer formed on the substrate, a non-single-crystal semiconductor layer member is disposed on the conductive substrate or the conductive layer, the non-single-...
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6984847 |
An organic electroluminescent device includes first and second substrates facing and spaced apart from each other; a gate line on an inner surface of the first substrate; a semiconductor layer over the gate line, the semiconductor layer ...
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6930326 |
According to the invention, a plurality of semiconductor devices which are required to have conformance are formed from crystalline semiconductor films having uniform crystallinity on the same line, and a semiconductor circuit in which v...
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6831333 |
To provide a thin film transistor having a low OFF characteristic and to provide P-channel type and N-channel type thin film transistors where a difference in characteristics of the P-channel type and the N-channel type thin film transis...
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6815805 |
The present invention provides a flash memory integrated circuit and a method of fabricating the same. A tunnel dielectric in an erasable programmable read only memory (EPROM) device is nitrided with a hydrogen-bearing compound, particul...
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6734499 |
An insulated gate field effect transistor comprises a non-single-crystalline semiconductor layer formed on a substrate, a gate electrode is formed on a portion of the surface of said semiconductor layer, and a gate insulating film is dis...
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6716664 |
A functional device free from cracking and having excellent functional characteristics, and a method of manufacturing the same are disclosed. A low-temperature softening layer ( 12 ) and a heat-resistant layer ( 13 ) are formed in this o...
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6670657 |
An integrated circuit is provided that includes a substrate incorporating a semiconductor photodiode device having a p-n junction. The photodiode device includes at least one capacitive trench buried in the substrate and connected in par...
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6639264 |
A method for passivating surface states in an integrated circuit structure having a gate conductor with a gate dielectric layer. The method comprises the step of fabricating a solid state source of fluorine in close proximity to the gate...
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6593164 |
A cyano process of introducing cyano ions (CN − ) into an amorphous silicon layer is performed after the amorphous silicon layer has been formed over a substrate or after the layer has been exposed to light. For example, the substrate ...
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6503771 |
A semiconductor device including a conductive substrate or a first conductive layer formed on the substrate, a non-single-crystal semiconductor layer member is disposed on the conductive substrate or the conductive layer, the non-single-...
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6492659 |
To fabricate a crystalline semiconductor film with controlled locations and sizes of the crystal grains, and to utilize the crystalline semiconductor film in the channel-forming region of a TFT in order to realize a high-speed operable T...
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6433269 |
A cyano process of introducing cyano ions (CN − ) into an amorphous silicon layer is performed after the amorphous silicon layer has been formed over a substrate or after the layer has been exposed to light. For example, the substrate ...
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6346716 |
A photoelectric conversion device has a non-single-crystal semiconductor laminate member formed on a substrate having a conductive surface, and a conductive layer formed on the non-single-crystal semiconductor laminate member. The non-si...
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RE37441 |
A photoelectric conversion device has a non-single-crystal semiconductor laminate member formed on a substrate having a conductive surface, and a conductive layer formed on the non-single-crystal semiconductor laminate member. The non-si...
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6310363 |
In those thin-film transistors (TFTs) employing as its active layer a silicon film crystallized using a metal element, the objective is to eliminate bad affection of such metal element to the TFT characteristics. To this end, in a TFT ha...
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6215154 |
A thin film transistor (TFT) which may be used as a pixel drive element in an active matrix LCD display includes a pair of side wall spacers adjacent to the opposing side walls of its gate electrode. The side wall spacers provide the gat...
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6184541 |
On the polycrystal semiconductor film 3 formed on the insulating substrate 1, the source 6 and drain 7 in LDD structure having a low concentration region 4 and a high concentration region 5 are formed. The region 4 has a low impurity con...
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6180991 |
A non-single-crystalline semiconductor material and a device utilizing the material, the material being of an intrinsic or substantially intrinsic conductivity type and including silicon and containing a dangling bond neutralizer consist...
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6180982 |
To provide a thin film transistor having a low OFF characteristic and to provide P-channel type and N-channel type thin film transistors where a difference in characteristics of the P-channel type and the N-channel type thin film transis...
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6144041 |
A method of manufacturing a semiconductor includes the steps of: forming a first semiconductor film on a substrate having an insulating surface; applying an energy to the first semiconductor film to crystallize the first semiconductor fi...
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6114734 |
The present invention is a method for improving transistor channel hot carrier reliability by incorporating a solid deuterium source into the transistor structure. This is accomplished by using a deuterium containing source gas for forma...
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6097071 |
An electrostatic discharge protection device for protecting a mixed voltage integrated circuit against damage is provided which includes at least on pair of NMOS transistors connected in a cascode configuration. Each NMOS transistor pair...
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6093936 |
A silicon semiconductor integrated circuit includes an insulative field oxidation layer which substantially does not encroach under active circuit elements of the integrated circuit. The field oxidation layer is formed of oxidized amorph...
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6037611 |
A method of fabricating a thin film transistor includes the steps of forming an active layer on an insulating substrate; forming an insulating layer and a first metal layer on the active layer; forming a photoresist pattern for forming a...
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6028264 |
Non-single-crystalline semiconductor material or device containing carbon impurity in a concentration less than 4×10 18 atoms/cm 3 .
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5970325 |
A thin-film switching device includes an active region including noncrystalline silicon, e.g., hydrogenated amorphous silicon, which includes chlorine distributed in a manner which produces a predetermined photoconductivity and a predete...
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5959313 |
Regions 106 which can be regarded as being monocrystalline are formed locally by irradiating with laser light, and at least the channel-forming region 112 is constructed using these regions. With thin-film transistors which have such a c...
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5959312 |
A sensor device includes a sensing element and a thin film transistor (TFT), and the TFT's channel leads include semiconductor channel leads formed in a layer of microcrystalline silicon (μc-Si). The sensing element is formed in a semic...
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5942049 |
High quality, stable photovoltaic and electronic amorphous silicon devices which effectively resist light-induced degradation and current-induced degradation, are produced by a special plasma deposition process. Powerful, efficient singl...
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5883398 |
A device having a switch comprises a chromium layer and an adjacent semiconductor layer. The fraction of voids in the chromium layer is less than 10%, preferably less than 2%. The chromium layer in the device comprises traces of neon wit...
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5824418 |
A semiconductor window which is transparent to light in the infrared range and which has good electrical conductivity is formed of a prefabricated semiconductor sheet bonded to a substrate material by optical contact. The sheet is a subs...
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5811836 |
A thin film transistor for a liquid crystal display includes a substrate; an active layer having source and drain regions over the substrate; a first insulating layer adjacent to the active layer and having first and second surfaces, the...
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5808318 |
A polycrystalline semiconductor thin film formed in a stripe shape on an insulating substrate wherein crystal particles are arranged in a line-texture form in a longitudinal direction of a stripe; an electric field effect mobility ν L ...
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5751016 |
A device having a switch comprises a chromium layer and an adjacent semiconductor layer. The fraction of voids in the chromium layer is less than 10%, preferably less than 2%. The chromium layer in the device comprises traces of neon wit...
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5731613 |
Regions 106 which can be regarded as being monocrystalline are formed locally by irradiating with laser light, and at least the channel-forming region 112 is constructed using these regions. With thin-film transistors which have such a c...
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5693975 |
A structure for a complementary field effect transistor includes a semiconductor body having a first body region of a first conductivity type and an adjoining second body region of an opposite second conductivity type. A buried dielectri...
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5682037 |
Thin film detector of ultraviolet radiation with high spectral selectivity option, and a structure placed between two electrodes, formed by the superposition of semiconductor thin films such as hydrogenated amorphous silicon and its allo...
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5676765 |
A photovoltaic element comprising a substrate and a multi-layered semiconductor active layer having a pin junction structure disposed on said substrate, said multi-layered semiconductor layer comprising a non-single crystal semiconductor...
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5656822 |
The longitudinal edges of the overlying channel layer of a thin-film transistor are substantially aligned with the longitudinal edges of the underlying polysilicon gate layer. As a result of this line-on-line arrangement of the channel a...
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5644145 |
A process for forming a silicon-containing amorphous film on a substrate which comprises (a) step of depositing a silicon-containing amorphous film on said substrate and (b) step of irradiating plasma of inert gas to said silicon-contain...
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5585949 |
A display device with over voltage protection circuits having zener diode characteristics. The protection circuits have pairs of TFTs connected to resistive dividers. Each resistive divider provide the voltage set levels for one directio...
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