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7474002 |
In the semiconductor device having a structure in which a plurality of layers are built-up by layers made of different materials or layers including various formed patterns, it is an object to provide a method which smoothing surface can...
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7473926 |
An array substrate for an LCD device and a method of fabricating the same are disclosed. The array substrate includes: a substrate defining a display area and a non-display area; an n-type driving TFT and a p-type driving TFT in the non-...
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7470932 |
A liquid crystal display (LCD) panel is fabricated in a simplified process. The LCD panel includes a thin film transistor (TFT) array substrate with a gate and data lines crossing each other to define a pixel area, a TFT at the crossings...
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7462895 |
A thin film transistor (TFT) array panel with signal lines that have low resistivity is presented. The TFT array panel includes an insulating substrate, a gate line formed on the insulating substrate, a gate insulating layer formed on th...
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7460189 |
The present invention realizes the two-layered resist structure for obtaining a half exposure pattern of high sensitivity and high accuracy and a manufacturing method of a display device which includes thin film transistors which are for...
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7453095 |
An element structure is provided in which film formation irregularities and deterioration of an organic compound layer formed on an electrode are prevented in an active matrix light emitting device. After forming an insulating film so as...
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7453094 |
The present invention is to use a film containing fluoroplastics that is capable of forming into a lamination as a protective film for protecting a light-emitting device against moisture or gas such as oxygen so as to prevent of deterior...
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7449718 |
The manufacturing method of a semiconductor device according to the present invention comprises steps of forming a metal film, an insulating film, and an amorphous semiconductor film in sequence over a first substrate; crystallizing the ...
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7449717 |
An asymmetry thin-film transistor includes a substrate, a semiconductor layer positioned on the substrate, and a gate positioned on the substrate. The semiconductor layer has a channel region, a single lightly doped region and a first he...
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7436384 |
A data driving apparatus for a liquid crystal display includes a plurality of data driving integrated circuits adjacent to a liquid crystal display panel for converting input pixel data into pixel voltage signals, one or more multiplexor...
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7423289 |
A manufacturing method and the structure of a thin film transistor liquid crystal display (TFT-LCD) are disclosed. The TFT-LCD uses metal electrodes as a mask to thoroughly remove the unwanted semiconductor layer during the etching proce...
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7413940 |
A fabrication method of a TFT includes successively forming four thin films containing a first conductive layer, an insulation layer, a semiconductor layer, and a second conductive layer on a substrate, performing a first PEP process to ...
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7410839 |
The present invention provides a thin film transistor in which a substantial length of a channel is shortened to miniaturize a semiconductor device and a manufacturing method thereof. In addition, the present invention provides a semicon...
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7408190 |
A thin film transistor including a gate, a gate insulating layer, a semiconductor layer and a source/drain is provided. The gate is disposed over a substrate, wherein the gate comprises at least one molybdenum-niobium alloy nitride layer...
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7405425 |
A thin film transistor includes a gate electrode on a substrate, a gate insulating layer on the substrate, a channel pattern, a source electrode and a drain electrode. The channel pattern includes a semiconductor pattern formed on the ga...
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7405424 |
An electronic device and a method of fabricating the electronic device includes forming a first electrical contact, a dielectric layer and a second electrical contact wherein the dielectric layer is located between the first and the seco...
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7397063 |
A semiconductor device comprises a glass substrate serving as a substrate having an insulated surface and a silicon layer located on a position overlapping with this glass substrate. The silicon layer includes an amorphous gettering regi...
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7391051 |
In thin film transistors (TFTs) having an active layer of crystalline silicon adapted for mass production, a catalytic element is introduced into doped regions of an amorphous silicon film by ion implantation or other means. This film is...
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7381987 |
A driving circuit for a display device including a plurality of stages connected to each other and sequentially generating output signals, wherein each of the stages comprises a plurality of transistors, wherein each of the transistors c...
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7375373 |
A thin film transistor array panel includes an insulating substrate, a gate wire formed on the insulating substrate. A gate insulating layer covers the gate wire. A semiconductor pattern is formed on the gate insulating layer. A data wir...
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7375372 |
A thin film transistor (TFT) and a manufacturing method thereof are provided. The thin film transistor (TFT) comprises a substrate, a gate, an inter-gate dielectric layer, a channel layer and source/drain regions. A gate is formed over t...
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7368757 |
A back electrode 6 is formed in the back of a Si single crystal substrate 2 of a compound semiconductor in which an n-type 3C-SiC single crystal buffer layer 3 having a thickness of 0.05-2 μm, a carrier concentration of 10 16 -10 ...
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7358533 |
The present invention provides an electronic device having more than two conductive layers that cross but not in contact with each other. At least one of the conductive layers comprises a width change part, a width of which changes in a ...
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7358528 |
A method for fabricating a liquid crystal display includes providing a first substrate having a pixel part and a driving circuit part, forming a gate electrode in the pixel part of the first substrate, forming a first insulation film, a ...
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7348598 |
A TFT, in which source and drain electrodes having concentric circular shapes are formed, reduces an OFF current caused by a leakage current and optimizes an ON current and a stray capacitance between gate and source electrodes. The TFT ...
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7345307 |
The present invention is directed to thin film transistors using nanowires (or other nanostructures such as nanoribbons, nanotubes and the like) incorporated in and/or disposed proximal to conductive polymer layer(s), and production scal...
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7335913 |
An electro-optical device includes a pair of substrates that are disposed to face each other with a predetermined gap therebetween, one substrate of the pair of substrates extending from the other substrate on at least one side in plan v...
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7335910 |
An object of the present invention is to provide a thin film transistor having a high mobility and having fewer fluctuations in the mobility or threshold voltage characteristics. A non-single-crystal semiconductor thin film having a thic...
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7329897 |
An organic thin film transistor and a method of manufacturing the same are provided. The transistor has a threshold voltage that can be easily controlled without changing the material forming an organic semiconductor film. The organic th...
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7323369 |
Scan lines are formed on a substrate. A patterned dielectric layer and a patterned semiconductor layer are formed to cover portions of the scan lines. A patterned transparent conductive layer and a patterned metal layer are sequentially ...
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7306979 |
A method of fabricating a thin film transistor substrate for a display device is provided. The method includes the steps of forming a gate line and a gate electrode connected to the gate line; forming a gate insulating film disposed cove...
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7297977 |
One exemplary embodiment includes a semiconductor device. The semiconductor device comprising a channel including one or more of a metal oxide including zinc-gallium, cadmium-gallium, cadmium-indium.
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7288802 |
A field effect transistor (FET) and method of forming the FET comprises a substrate; a silicon germanium (SiGe) layer over the substrate; a semiconductor layer over and adjacent to the SiGe layer; an insulating layer adjacent to the subs...
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7288787 |
The present invention provides a thin-film transistor offering a higher electron (or hole) mobility, a method for manufacturing the thin-film transistor, and a display using the thin-film transistor. The present invention provides a thin...
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7279370 |
A thin film transistor array substrate device includes a gate line formed on a substrate, a data line crossing the gate line with a gate insulating pattern position therebetween, a thin film transistor at a crossing of the gate line and ...
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7274038 |
The present invention provides a method for forming by plasma CVD a silicon nitride film that can be formed over heat-sensitive elements as well as an electroluminescent element and that has favorable barrier characteristics. Further, th...
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7274036 |
A TFT including a gate metallic layer, a body layer doped with a dopant having a first polarity, a source layer and a drain layer doped with a dopant having a second polarity, a semiconductor layer formed between the source layer and the...
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7265811 |
A display device using a novel semiconductor device, which includes a pixel matrix, an image sensor, and a peripheral circuit for driving those, that is, which has both a camera function and a display function, and is made intelligent, i...
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7262433 |
A first thin film transistor including a gate electrode, a source region, a drain region, a GOLD region, and a channel region is formed at a first region at a TFT array substrate. A second thin film transistor including a gate electrode,...
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7253437 |
A semiconductor device and a method for forming the same are disclosed. The semiconductor device comprising an insulated gate field effect transistor provided with a region having added thereto an element at least one selected from the g...
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7247882 |
There is provided a semiconductor device having TFTs whose thresholds can be controlled. There is provided a semiconductor device including a plurality of TFTs having a back gate electrode, a first gate insulation film, a semiconductor ...
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7244962 |
Subjected to obtain a crystalline TFT which simultaneously prevents increase of OFF current and deterioration of ON current. A gate electrode of a crystalline TFT is comprised of a first gate electrode and a second gate electrode formed ...
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7238963 |
A self-aligned LDD TFT and a fabrication method thereof. A substrate is provided, on which a semiconductor layer is formed. A first masking layer is provided over a first region of the portion of the semiconductor layer. The first maskin...
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7233033 |
A small semiconductor display device of low power consumption and with high definition/high resolution/high image quality is provided. The semiconductor display device according to the present invention includes a pixel matrix circuit, a...
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7227185 |
A thin film transistor (TFT) liquid crystal display (LCD) panel, its array substrate, and its manufacturing method. Color filters are integrated on the TFT array, and color filter stacks are formed on the thin film transistors to replace...
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7223996 |
A circuit adapted to dynamically activate an electro-optical display device is constructed from a thin-film gate-insulated semiconductor device. This device comprises PMOS TFTs producing only a small amount of leakage current. Besides th...
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7211825 |
In electronic displays or imaging units, the control of pixels is achieved by an array of transistors. These transistors are in a thin film form and arranged in a two-dimensional configuration to form switching circuits, driving circuits...
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7202498 |
A thin film transistor array panel is provided, which includes: a gate line formed on an insulating substrate; a gate insulating layer on the gate line; a semiconductor layer on the gate insulating layer; a data line formed on the gate i...
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7202495 |
An organic semiconductor element is provided which has the controlled crystalline state of a vapor-deposited pentacene layer and a high mobility with low voltage driving. The organic semiconductor element is formed by providing a gate el...
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7202117 |
A silicon layer interposed between the top silicon nitride layer (SiN) and a silicon germanium layer (SiGe) which in turn is over a thick oxide (BOX) is selectively etched to leave a stack with a width that sets the gate length. A sidewa...
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