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7375373 |
A thin film transistor array panel includes an insulating substrate, a gate wire formed on the insulating substrate. A gate insulating layer covers the gate wire. A semiconductor pattern is formed on the gate insulating layer. A data wir...
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7358533 |
The present invention provides an electronic device having more than two conductive layers that cross but not in contact with each other. At least one of the conductive layers comprises a width change part, a width of which changes in a ...
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7348598 |
A TFT, in which source and drain electrodes having concentric circular shapes are formed, reduces an OFF current caused by a leakage current and optimizes an ON current and a stray capacitance between gate and source electrodes. The TFT ...
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7166861 |
The present invention provides a thin-film transistor that is formed by using a patterning method capable of forming a semiconductor channel layer in sub-micron order and a method for manufacturing thereof that provides a thin-film trans...
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7148510 |
A semiconductor display device with an interlayer insulating film in which surface levelness is ensured with a limited film formation time, heat treatment for removing moisture does not take long, and moisture in the interlayer insulatin...
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7145175 |
According to the invention, a plurality of semiconductor devices which are required to have conformance are formed from crystalline semiconductor films having uniform crystallinity on the same line, and a semiconductor circuit in which v...
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7112545 |
The surface of a semiconductor material, e.g., gallium arsenide, is passivated by irradiating the surface with ultra-short laser pulses, until a stable passive surface is achieved. The passive surface so prepared is devoid of a superfici...
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7023015 |
A thin-film semiconductor device is provided including a plurality of thin-film transistors (TFT) having different driving voltages formed on an glass substrate, wherein a gate insulator electric field at each of the driving voltages of ...
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6930326 |
According to the invention, a plurality of semiconductor devices which are required to have conformance are formed from crystalline semiconductor films having uniform crystallinity on the same line, and a semiconductor circuit in which v...
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6902440 |
A low K dielectric composite layer is formed of a low k barrier layer and a low K dielectric layer on the barrier layer. The barrier layer, which is deposited with the result of having a hydrophobic top surface, is treated with an oxygen...
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6885028 |
A transistor array includes conductor lines, function lines, and transistors. Each of the conductor lines includes a core and a conductor layer that covers the core. Each of the function lines includes a core, at least the surface of whi...
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6753550 |
The present invention improves a productivity in growing an a-Si film in a thin film transistor and to obtain an excellent thin film transistor characteristic. More specifically, disclosed is a thin film transistor in which an amorphous ...
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6737676 |
A thin film field effect transistors and manufacturing method for the same are described. The channel region of the transistor is spoiled by an impurity such as oxygen, carbon, nitrogen. The photosensitivity of the channel region is redu...
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6734499 |
An insulated gate field effect transistor comprises a non-single-crystalline semiconductor layer formed on a substrate, a gate electrode is formed on a portion of the surface of said semiconductor layer, and a gate insulating film is dis...
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6664566 |
A photoelectric conversion device has a non-single-crystal semiconductor laminate member formed on a substrate having a conductive surface, and a conductive layer formed on the non-single-crystal semiconductor laminate member. The non-si...
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6657268 |
A metal gate structure and method of forming the same introduces metal impurities into a first metal layer, made of TiN, for example. The impurities create a surface region of greater etch selectivity that prevents overetching of the TiN...
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6600196 |
The present invention relates to minimizing a leakage current in a floating island portion formed in a thin film transistor. More specifically, the present invention is directed to a thin film transistor including: a source electrode 14...
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6576925 |
The present invention relates to minimizing a leakage current in a floating island region formed in a thin film transistor, and to maintaining a large ON-current required for an operation of the TFT. More specifically, the present invent...
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6570203 |
There is provided a semiconductor device which comprises a capacitor including a lower electrode, a dielectric film, and an upper electrode, a first protection film formed on the capacitor, a first wiring formed on the first protection f...
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6562645 |
Disclosed is a method of fabricating fringe field switching mode liquid crystal display by forming a gate bus line and a common electrode line on a lower substrate in parallel with each other; forming a gate insulating layer on the lower...
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6559520 |
A siloxan polymer insulation film has a dielectric constant of 3.1 or lower and has —SiR 2 O— repeating structural units with a C atom concentration of 20% or less. The siloxan polymer also has high thermal stability and high humidit...
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6503771 |
A semiconductor device including a conductive substrate or a first conductive layer formed on the substrate, a non-single-crystal semiconductor layer member is disposed on the conductive substrate or the conductive layer, the non-single-...
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6444513 |
A metal gate structure and method of forming the same introduces metal impurities into a first metal layer, made of TiN, for example. The impurities create a surface region of greater etch selectivity that prevents overetching of the TiN...
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6437368 |
An Ta film for use in forming a source electrode and a drain electrode and an amorphous silicon film for use in forming an amorphous silicon semiconductor layer with impurity are continuously etched without setting an etching selectivity...
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6362493 |
An amorphous silicon thin film transistor for active matrix liquid crystal displays according to the present invention comprises a transparent conductive film, which is formed together with a picture element electrode, a metal film, whic...
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6346716 |
A photoelectric conversion device has a non-single-crystal semiconductor laminate member formed on a substrate having a conductive surface, and a conductive layer formed on the non-single-crystal semiconductor laminate member. The non-si...
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6310363 |
In those thin-film transistors (TFTs) employing as its active layer a silicon film crystallized using a metal element, the objective is to eliminate bad affection of such metal element to the TFT characteristics. To this end, in a TFT ha...
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6265730 |
A thin-film transistor is provided in which the thickness of the insulating film is optimized. A gate electrode is formed on a transparent substrate. A silicon nitride film and a silicon oxide film, acting as a gate insulating film, are ...
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6215154 |
A thin film transistor (TFT) which may be used as a pixel drive element in an active matrix LCD display includes a pair of side wall spacers adjacent to the opposing side walls of its gate electrode. The side wall spacers provide the gat...
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6184541 |
On the polycrystal semiconductor film 3 formed on the insulating substrate 1, the source 6 and drain 7 in LDD structure having a low concentration region 4 and a high concentration region 5 are formed. The region 4 has a low impurity con...
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6150671 |
A transistor of SiC having a drain and a highly doped substrate layer is formed on the drain. A highly n type buffer layer may optionally be formed on the substrate layer. A low doped n-type drift layer, a p-type base layer, a high doped...
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6144041 |
A method of manufacturing a semiconductor includes the steps of: forming a first semiconductor film on a substrate having an insulating surface; applying an energy to the first semiconductor film to crystallize the first semiconductor fi...
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6114734 |
The present invention is a method for improving transistor channel hot carrier reliability by incorporating a solid deuterium source into the transistor structure. This is accomplished by using a deuterium containing source gas for forma...
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6093937 |
A semiconductor device includes a substrate having an insulating film on its surface, and an active layer made of a semiconductive thin film on the substrate surface. The thin film contains a mono-domain region formed of multiple columna...
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6093936 |
A silicon semiconductor integrated circuit includes an insulative field oxidation layer which substantially does not encroach under active circuit elements of the integrated circuit. The field oxidation layer is formed of oxidized amorph...
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6084247 |
Semiconductor devices such as thin-film transistors formed by annealing a substantially amorphous silicon film at a temperature either lower than normal crystallization temperature of amorphous silicon or lower than the glass transition ...
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6069370 |
An amorphous silicon thin film transistor for active matrix liquid crystal displays according to the present invention comprises a transparent conductive film, which is formed together with a picture element electrode, a metal film, whic...
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6033941 |
A thin film transistor which includes an oxide layer containing a trench; a semiconductor layer formed on the oxide layer, including the trench; a buffer layer formed on the semiconductor layer in the trench; a gate electrode aligned on ...
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5981990 |
In a memory cell of an SRAM, a load transistor has a pair of source/drain regions formed to define a channel region, and a gate electrode layer being opposite to the channel region with an insulating layer therebetween. A VVP layer is fo...
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5959312 |
A sensor device includes a sensing element and a thin film transistor (TFT), and the TFT's channel leads include semiconductor channel leads formed in a layer of microcrystalline silicon (μc-Si). The sensing element is formed in a semic...
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5859445 |
An electro-optical device having a plurality of pixel electrodes, each with at least one thin film transistor. The channel region of the transistor is spoiled by an impurity such as oxygen, carbon, or nitrogen. The photosensitivity of th...
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5824418 |
A semiconductor window which is transparent to light in the infrared range and which has good electrical conductivity is formed of a prefabricated semiconductor sheet bonded to a substrate material by optical contact. The sheet is a subs...
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5760420 |
The effect of a TFT having a Ge--Si contact layer is that a stable etching of the contact layer, without excessive etching of the semiconductor layer can be made due to a good selectivity when etching. Consequently, a uniform channel aft...
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5744818 |
A high quality semiconductor device comprising at least a semiconductor film having a microcrystal structure is disclosed, wherein said semiconductor film has a lattice distortion therein and comprises crystal grains at an average diamet...
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5731613 |
Regions 106 which can be regarded as being monocrystalline are formed locally by irradiating with laser light, and at least the channel-forming region 112 is constructed using these regions. With thin-film transistors which have such a c...
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5644145 |
A process for forming a silicon-containing amorphous film on a substrate which comprises (a) step of depositing a silicon-containing amorphous film on said substrate and (b) step of irradiating plasma of inert gas to said silicon-contain...
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5614732 |
A thin film field effect transistors and manufacturing method for the same are described. The channel region of the transistor is spoiled by an impurity such as oxygen, carbon, nitrogen. The photosensitivity of the channel region is redu...
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5591987 |
A semiconductor device which has a non-single crystal semiconductor layer formed on a substrate and in which the non-single crystal semiconductor layer is composed of a first semiconductor region formed primarily of non-single crystal se...
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5565691 |
In a thin film semiconductor device having a substrate (1), an active layer (3, 6, 9), a gate insulation layer (4), and a gate electrode (5), the active layer is produced through the steps of producing an amorphous silicon layer on said ...
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5521400 |
A semiconductor device including a conductive substrate or a first conductive layer formed on the substrate, a non-single-crystal semiconductor layer member is disposed on the conductive substrate or the conductive layer, the non-single-...
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