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7411304 |
An interconnect for testing a semiconductor component includes a substrate, and interconnect contacts on the substrate configured to electrically engage component contacts on a semiconductor component. Each interconnect contact includes ...
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7326953 |
The invention relates to a layered construction for a Gunn diode. The layered construction comprises a series of stacked layers consisting of a first highly doped n d GaAs layer ( 3 ), a graded AlGaAs layer ( 5 ), which is placed upon t...
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7294518 |
The present invention provides a photoresist stripper including about 5 wt % to about 20 wt % alcohol amine, about 40 wt % to about 70 wt % glycol ether, about 20 wt % to about 40 wt % N-methyl pyrrolidone, and about 0.2 wt % to about 6 ...
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7241652 |
Disclosed herein is a method for fabricating an organic thin film transistor that includes a gate electrode, a gate insulating film, source/drain electrodes and an organic semiconductor layer formed in this order on a substrate wherein t...
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7211516 |
The present invention provides a semiconductor device, a method of manufacture therefore and a method for manufacturing an integrated circuit including the same. The semiconductor device, among other elements, may include a substrate ( 1...
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7148543 |
A semiconductor chip includes a base substrate, a bulk device region having a bulk growth layer on a part of the base substrate, an SOI device region having a buried insulator on the base substrate and a silicon layer on the buried insul...
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7005215 |
A mask fabrication and repair technique including multiple exposures is provided. In this multiple exposure technique, the first exposure can define the critical dimensions (CDs) of the shapes for the mask. A subsequent exposure can elim...
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6969867 |
Multi-terminal field effect devices comprising a chalcogenide material. The devices include a first terminal, a second terminal and a field effect terminal. Application of a gate signal to the field effect terminal modulates the current ...
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6873004 |
An asymmetrical virtual ground single transistor floating gate memory cell has a floating gate that overlies a channel region in a p-well, the channel region lying between a heavily doped n+ drain region and a lightly doped n− source r...
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6815786 |
A semiconductor optical device includes, on a semiconductor substrate, a mesa-stripe-like multilayer structure constituted by at least an n-cladding layer, an active region formed from an active layer or a photoabsorption layer, and a p-...
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6690026 |
An apparatus comprising control circuitry formed on a substrate, and a plurality of active media coupled to the control circuitry and formed in a plurality of planes over the substrate. A method comprising forming a pair of junction regi...
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6686647 |
Indium phosphor (InP) Gunn diode that realizes improvements in thermal characteristics, yield factor of good products and easy assembly to planar circuits is provided. In a Gunn diode of the present invention, contact layers are interpo...
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6518589 |
An electronic device includes a FET that is capable of operating in a negative differential resistance mode as well as in a conventional FET mode. The selection of the mode can be accomplished by providing a control signal to a body term...
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6426511 |
A Gunn diode which is formed by sequentially laminating a first semiconductor layer, an active layer and a second semiconductor layer onto a semiconductor substrate. The Gunn diode comprises first and second electrodes arranged on the se...
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6369663 |
A Gunn diode which is formed by sequentially laminating a first semiconductor layer, an active layer and a second semiconductor layer onto a semiconductor substrate. The Gunn diode comprises first and second electrodes arranged on the se...
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6344658 |
A Gunn diode which is formed by sequentially laminating a first semiconductor layer, an active layer and a second semiconductor layer onto a semiconductor substrate. The Gunn diode comprises first and second electrodes arranged on the se...
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6111265 |
A Gunn diode includes a layered structure including at least a cathode layer, an anode layer, and an active region interposed between the cathode and anode layers, wherein at least a portion of the active region is an AlGaAs layer.
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6077760 |
A method of manufacturing single-crystal silicon carbide/single-crystal silicon heterojunctions with negative differential resistance, by which one or more single-crystal silicon carbide/single-crystal silicon layer(s) with different typ...
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6048777 |
A low cost highly integrated method of fabricating a heat sink on the backside of a power semiconductor device maintains device performance, improves thermal transfer, and enables reliable planar connections without having to dice the wa...
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5675157 |
A semiconductor body (2) has an active region (6) of n conductivity type formed of a material having a relatively low mass, high mobility conduction band main minimum and at least one relatively high mass, low mobility conduction band sa...
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5440166 |
A field oxide structure is formed within a cavity formed in a semiconductor substrate. The cavity has a U-shaped cross section. A layer of thermal oxide covers the walls and bottom of the cavity, and a region of reflowable glass or spin ...
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5347141 |
The present invention (or multi-terminal lateral hot-electron transistor, ET) is based on a high electron mobility (hot-electron) transistor with a split-gate arrangement similar to those used in quantum wave guide devices. In the presen...
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5336901 |
A semiconductor structure comprises a first material layer of a homopolar material having a conduction band that includes an L valley and a Γ valley such that the L valley has an energy level lower than the Γ valley when in a bulk crys...
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5329257 |
This invention is a three layer Si x Ge 1 -x structure formed on a silicon substrate in which a thin, lightly doped Si x Ge 1 -x layer is formed between two heavily doped Si x Ge 1 -x layers. The incorporation of at least 10% germaniu...
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5311034 |
A Gunn diode in which the conversion efficiency can be improved without lowering the reliability, by reducing the dead zone while maintaining n + nn + structure. In this Gunn diode, the donor impurity concentration in the n-type active...
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5258624 |
A transferred electron effect device has a semiconductor body with an active region (2) of n conductivity type formed of a semiconductor material having a relatively low mass, high mobility conduction band main minimum and at least one r...
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5250815 |
A transferred electron effect device (1) has adjacent its cathode contact region (3) an injection zone (60) defining a potential barrier (P) for causing electrons to be emitted, under the influence of an electric field applied between th...
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5151758 |
A planar doped valley field effect transistor (PDVFET), which positions more than one two-dimensional electron gas (2DEG) layer within a homo-structure (GaAs), in order to improve the FET's power output. The FET includes two 2DEG donor p...
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5049971 |
A device useful both as a switch and power limiter and particularly adapted for use in microwave application. The device is made with conventional FET processing technology, a current conducting layer being formed at a surface of a subst...
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4924114 |
A temperature sensor having a semiconductor body is disclosed. The semiconductor body includes a substrate of a compound semiconductor and an epitaxial layer of a mixed crystal in which different conduction band minima with different eff...
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4914489 |
A constant current semiconductor device includes a first semiconductor active layer and a second semiconductor active layer which is of a different material from the first active layer and forms a heterojunction together with the first a...
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4894691 |
A compound semiconductor device having a channel layer which is made of periodically laminated structure of thin-film layers of compound semiconductor substantially being different from each other. The difference of energy between the co...
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4879581 |
The invention provides a new transferred electron device, including a substrate, a metal layer forming the cathode contact, an N doped semiconductor input layer and a periodic structure formed of elementary cells; each cell includes a sh...
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4801982 |
A Gunn effect oscillator comprises a body of semiconductor material in which electrons are injected from one region to another region via a very thin intervening system. The thin region has a thickness which is less than the mean free el...
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4751423 |
A photocathode having a low dark current comprises a first layer consisting of P + type semiconductor material which is transparent to all wavelengths of the light to be detected, a second layer consisting of P + type semiconductor in ...
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4649405 |
A high frequency transferred electron device having electron ballistic injection and extraction for very high efficiency is disclosed. The device comprises a semiconductor body having at least two electrodes with a thin barrier layer bei...
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4625182 |
A high power solid state source of microwave and millimeter wave signals is provided by an optically triggered body of bulk semiconductor material selected from the Group III-V compounds including GaAs, Cr:GaAs, and Fe:InP and having a r...
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4604637 |
A light-emitting diode comprises III-V semiconductor material having a pn junction as its light-active zone from which luminescent radiation is emitted, the radiation having a pressure-dependent characteristic. The diode is characterized...
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4539581 |
A transferred electron semiconductor device in the form of an oscillator, for example, is fabricated by a molecular beam epitaxy growth process wherein a plurality of semiconductor layers are sequentially grown on a planar substrate. A p...
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4417261 |
A transferred electron device includes a novel cathode giving improvement in the dc to microwave conversion efficiency over a wide temperature range. The cathode comprises a narrow n + semiconductor zone next to the device active region...
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4257055 |
Described is a heterostructure semiconductor device of sandwich type construction. The central layer exhibits high charge carrier mobility and a relatively narrow band gap characteristic. The outer sandwich layers exhibit low charge carr...
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4238763 |
This disclosure relates to two-terminal solid state microwave devices, such as transferred electron and avalanche effect devices, comprising a high-conductivity semiconductor substrate formed over at least a part of one major surface wit...
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4212020 |
Solid state electro-optical devices are formed on a semi-insulating substrate, with all contacts of each device being on the same side of the substrate. These devices include two types of lasers, one operating on current crowding effect ...
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4182964 |
Occurrence of high field domain in the conventional Gunn diode is prevented by covering a solid body such as a semiconductor element partially or wholly by a dielectric member or by a control element such as a metallic layer coupled reac...
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4134122 |
In a Gunn effect device the cathode contact is formed by an assembly of zones through which is effected the injection of current adjoining an assembly of zones which on the contrary are capable of blocking this injection. A layer of diel...
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4006490 |
A Gunn diode comprises deposited in succession on the active zone of gallium arsenide of type N: a first layer of the same material having the same type of conductivity but very strongly doped, and a second layer of amorphous germanium i...
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3981073 |
A lateral semiconductive device, such as a Gunn device or Impatt diode, is fabricated by depositing a barrier layer of beryllia over an epitaxial grown layer of N- type semiconductive material on an N+ type semiconductive wafer. The wafe...
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3977015 |
A semiconductor transferred electron device of the kind which includes indium phosphide as a major constituent is provided with a cathode consisting of oxidized silver gallium. The cathode preferably contains 4 times more silver than gal...
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3959807 |
A large voltage swing across a typical planar transferred electron logic device is achieved by a nonlinear load resistor in series with the transferred electron device. The nonlinear load resistor includes a body of transferred electron ...
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3958143 |
A long wavelength photoemitter, for example a III-V semiconductor, having a work function reduction activation layer thereon, with means for overcoming the energy barrier between the semiconductor conduction band edge and the vacuum comp...
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