| Document |
Document Title |
|
7425931 |
A method of manufacturing a semiconductor device, comprises the steps of: forming a first insulating film on a first substrate; forming a second insulating film on the first insulating film; forming an amorphous silicon film on the secon...
|
|
7375373 |
A thin film transistor array panel includes an insulating substrate, a gate wire formed on the insulating substrate. A gate insulating layer covers the gate wire. A semiconductor pattern is formed on the gate insulating layer. A data wir...
|
|
7348598 |
A TFT, in which source and drain electrodes having concentric circular shapes are formed, reduces an OFF current caused by a leakage current and optimizes an ON current and a stray capacitance between gate and source electrodes. The TFT ...
|
|
7276728 |
A vertical organic transistor comprises a substrate, a first electrode positioned over the substrate, a first semiconductor layer formed over the first electrode, a second electrode formed on the first semiconductor layer and shaped into...
|
|
7268379 |
The invention is directed to a memory cell on a substrate having a plurality of shallow trench isolations form therein, wherein top surfaces of the shallow trench isolations are lower than a top surface of the substrate and the shallow t...
|
|
7265385 |
A method of manufacturing an active matrix type display device, which is reliable and flexible, is provided. An active matrix type display device according to an aspect of the present invention includes: a first substrate, which is flexi...
|
|
7259433 |
The memory device has a plurality of dielectric films including charge storage layers CS having a charge holding capability therein and stacked on an active region of a semiconductor SUB and electrodes G on the plurality of dielectric fi...
|
|
7221096 |
An active matrix organic light emitting display panel includes a first substrate including a seal pattern region, a non-display region, and a display region, the non-display region being between the display region and the seal pattern re...
|
|
7220611 |
A liquid crystal display panel including a thin film transistor array substrate structure including, a substrate, a gate line and a data line disposed on the substrate and insulated from each other by a gate insulating pattern, a thin fi...
|
|
7202499 |
An object of the present invention is to provide a TFT of new structure in which the gate electrode overlaps with the LDD region and a TFT of such structure in which the gate electrode does not overlap with the LDD region. The TFT is mad...
|
|
7176790 |
A vehicle has a display device which widens the field of view (visible area) reflected by a side mirror or a back mirror mounted on the vehicle. To enable a driver driving the vehicle to confirm safety even when it is difficult for the d...
|
|
7154117 |
A display device in which variations of characteristics of a TFT are eliminated and the aperture ratio is improved is provided. A display device has a thin film transistor on an insulating substrate 10 . The thin film transistor include...
|
|
7148510 |
A semiconductor display device with an interlayer insulating film in which surface levelness is ensured with a limited film formation time, heat treatment for removing moisture does not take long, and moisture in the interlayer insulatin...
|
|
7145175 |
According to the invention, a plurality of semiconductor devices which are required to have conformance are formed from crystalline semiconductor films having uniform crystallinity on the same line, and a semiconductor circuit in which v...
|
|
7115903 |
An insulating film having depressions and projections are formed on a substrate. A semiconductor film is formed on the insulating film. Thus, for crystallization by using laser light, a part where stress concentrates is selectively forme...
|
|
7067845 |
In manufacturing a semiconductor device, static electricity is generated while contact holes are formed in an interlayer insulating film by dry etching. Damage to a pixel region or a driving circuit region due to travel of the static ele...
|
|
7034336 |
The channel region ( 11 ) and the source-drain regions ( 9, 10 ) are arranged vertically at a sidewall of a dielectric trench filling ( 4 ). On the opposite side, the semiconductor material is bounded by the gate dielectric ( 18 ) and th...
|
|
7002176 |
A vertical organic transistor comprises a substrate, a first electrode positioned over the substrate, a first semiconductor layer formed over the first electrode, a second electrode formed on the first semiconductor layer and shaped into...
|
|
6995472 |
An insulating tube includes a underlying insulating film, a first sidewall insulating film disposed on the underlying insulating film, a second sidewall insulating film disposed on the underlying insulating film, opposite to the first si...
|
|
6965153 |
This invention relates to an electrooptic system array having a plurality of electron lenses. The electrooptic system array includes upper, middle, and lower electrodes arranged along the paths of a plurality of charged-particle beams, t...
|
|
6930326 |
According to the invention, a plurality of semiconductor devices which are required to have conformance are formed from crystalline semiconductor films having uniform crystallinity on the same line, and a semiconductor circuit in which v...
|
|
6906390 |
The memory device has a plurality of dielectric films including charge storage layers CS having a charge holding capability therein and stacked on an active region of a semiconductor SUB and electrodes G on the plurality of dielectric fi...
|
|
6900464 |
The present invention relates to a thin film transistor device formed on an insulating substrate of a liquid crystal display device and others, a method of manufacturing the same, and a liquid crystal display device. In structure, there ...
|
|
6885028 |
A transistor array includes conductor lines, function lines, and transistors. Each of the conductor lines includes a core and a conductor layer that covers the core. Each of the function lines includes a core, at least the surface of whi...
|
|
6849873 |
In liquid crystal display device having a multi-layer conductive layer, such conductive layer is formed using a photoresist pattern having different thicknesses depending on the position. Upper layer of the gate pad is removed using an e...
|
|
6844599 |
A semiconductor device has thin film resistors connected in series to form a bleeder resistance circuit. Each of the thin film resistors is made of a polysilicon film doped with B or BF 2 P-type impurities and has two end portions each ...
|
|
6777754 |
A semiconductor device a bleeder resistance circuit having conductors, an insulating film disposed on the conductors, and thin film resistors each overlying a respective one of the conductors with the insulating film disposed therebetwee...
|
|
6774399 |
An active-matrix substrate is provided, which suppresses the unevenness of its surface due to the height difference of the TFTs and gate and data lines from the remaining area. After TFTs, gate lines, and data lines are formed on a trans...
|
|
6724010 |
A solid state imager is provided that comprises an imaging array of gated photodiodes. The imager comprises a plurality of photosensor pixels arranged in a pixel array, and each of the photosensor pixels includes a photodiode having a si...
|
|
6686606 |
The Mo or MoW composition layer has a low resistivity of less than 15 μΩcm and is etched to have a smooth taper angle using an Al alloy enchant or a Cr enchant, and the Mo or MoW layer is used for a wiring of a display or a semiconduct...
|
|
6603168 |
An integrated circuit memory device includes a substrate having at least one connection line therein and a plurality of memory cells formed on the substrate. Each memory cell includes a pillar comprising a lower source/drain region for a...
|
|
6570182 |
The Mo or MoW composition layer has a low resistivity of less than 15 μΩcm and is etched to have a smooth taper angle using an Al alloy enchant or a Cr enchant, and the Mo or MoW layer is used for a wiring of a display or a semiconduct...
|
|
6562645 |
Disclosed is a method of fabricating fringe field switching mode liquid crystal display by forming a gate bus line and a common electrode line on a lower substrate in parallel with each other; forming a gate insulating layer on the lower...
|
|
6559472 |
A method of depositing a thin film on a substrate in a semiconductor device using Atomic Layer Deposition (ALD) process parameters exposes the substrate to at least one adherent material in a quantity sufficient for the material to adsor...
|
|
6531710 |
An ULSI MOSFET formed using silicon on insulator (SOI) principles includes masking regions of an amorphous silicon film on a substrate and exposing intended active regions. Laser energy is directed against the intended active regions to ...
|
|
6504173 |
The present invention is directed to a method of fabricating a dual gate structure for use in FET devices wherein the dual gate structure comprises a bottom gate that is substantially a mirror image of the top gate. The method utilizes a...
|
|
6486494 |
The Mo or MoW composition layer has a low resistivity of less than 15 μΩcm and is etched to have a smooth taper angle using an Al alloy enchant or a Cr enchant, and the Mo or MoW layer is used for a wiring of a display or a semiconduct...
|
|
6448577 |
A high quality semiconductor device comprising at least a semiconductor film having a microcrystal structure is disclosed, wherein said semiconductor film has a lattice distortion therein and comprises crystal grains at an average diamet...
|
|
6445004 |
The Mo or MoW composition layer has a low resistivity of less than 15 μΩcm and is etched to have a smooth taper angle using an Al alloy enchant or a Cr enchant, and the Mo or MoW layer is used for a wiring of a display or a semiconduct...
|
|
6429457 |
A field-effect transistor is made with electrodes ( 2, 4, 5 ) and isolators ( 3 ) in vertically provided layers, such that at least the electrodes ( 4, 5 ) and the isolators ( 3 ) form a step ( 6 ) oriented vertically relative to the fir...
|
|
6429456 |
This invention provides an inverted staggered type thin-film transistor element wherein the n-doped amorphous silicon film ( 14 ) present in the region where the amorphous silicon film ( 13 ) does not overlap with the source-drain electr...
|
|
6369409 |
It is an object to provide a highly precise bleeder resistance circuit having an accurate voltage division ratio and a small temperature coefficient of the resistance value and a highly precise semiconductor device having a small tempera...
|
|
6313507 |
The present invention provides an SOI device preventing the floating body effect, and a method for manufacturing the same. Disclosed is a method comprising the steps of: forming an isolation layer on a first silicon substrate; forming a ...
|
|
6310363 |
In those thin-film transistors (TFTs) employing as its active layer a silicon film crystallized using a metal element, the objective is to eliminate bad affection of such metal element to the TFT characteristics. To this end, in a TFT ha...
|
|
6294814 |
A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of introducing energetic particles (22) through a surface of a donor substrate (10) to a selected depth (20) underneath the surface, wh...
|
|
6288412 |
A method of manufacturing a polycrystalline silicon film having a particular field effect mobility is disclosed. A first polycrystalline silicon film is formed on a transparent insulation substrate. The surface of the silicon film is oxi...
|
|
6265249 |
An additional high quality insulating layer is grown over the substrate after the formation of the gate electrode of a thin film transistor (TFT). The growth temperature of the insulating layer can be higher than conventional method and ...
|
|
6225667 |
A silicon on insulator (SOI) device includes an electrically-conducting interface region along a portion of the interface between the insulator and a semiconductor layer atop the insulator. The electrically-conducting interface region pr...
|
|
6215154 |
A thin film transistor (TFT) which may be used as a pixel drive element in an active matrix LCD display includes a pair of side wall spacers adjacent to the opposing side walls of its gate electrode. The side wall spacers provide the gat...
|
|
6188104 |
A trench DMOS device has a gate insulating layer on the bottom and sidewalls of the trench. The upper edges of the trench have an impurity injection region and are rounded. In addition, a first conductive layer is formed on the gate insu...
|
