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Document	Document Title
7443085	Piezoelectric actuator A piezoelectric actuator 1 includes a piezoelectric element 2 , which has a pair of electrodes formed on the surface of a piezoelectric ceramic member, as a drive source. The piezoelectric actuator 1 satisfies at least one of the fo...
7405474	Low cost thermally enhanced semiconductor package In one embodiment, a device is packaged using a low-cost thermally enhanced ball grid array (LCTE-BGA) package. The device may include a die with its backside mounted to the bottom side of a multi-layer packaging substrate. Thermal vias ...
7208751	Non-volatile semiconductor memory device allowing shrinking of memory cell Dummy cells are disposed in alignment with memory cells arranged in rows and columns in a memory array. The memory cell includes a variable resistance element and a select transistor having a collector connected to a substrate region and...
7196400	Semiconductor device with enhanced orientation ratio and method of manufacturing same An object is to enhance the orientation ratio of a crystalline semiconductor film obtained by crystallizing an amorphous semiconductor film while using as a substrate a less-heat-resistive material such as glass thereby providing a semic...
7145175	Semiconductor circuit and method of fabricating the same According to the invention, a plurality of semiconductor devices which are required to have conformance are formed from crystalline semiconductor films having uniform crystallinity on the same line, and a semiconductor circuit in which v...
7119363	Thin film transistor formed on a transparent substrate A thin-film transistor is formed on a transparent substrate and has a gate electrode film layer and a source and drain regions, and further has an alignment mark made of one and the same constituent material as a constituent material of ...
7112545	Passivation of material using ultra-fast pulsed laser The surface of a semiconductor material, e.g., gallium arsenide, is passivated by irradiating the surface with ultra-short laser pulses, until a stable passive surface is achieved. The passive surface so prepared is devoid of a superfici...
7098476	Multilayer interconnect structure containing air gaps and method for making A novel air-gap-containing interconnect wiring structure is described incorporating a solid low-k dielectric in the via levels, and a composite solid plus air-gap dielectric in the wiring levels. Also provided is a method for forming suc...
7034336	Capacitorless 1-transistor DRAM cell and fabrication method The channel region ( 11 ) and the source-drain regions ( 9, 10 ) are arranged vertically at a sidewall of a dielectric trench filling ( 4 ). On the opposite side, the semiconductor material is bounded by the gate dielectric ( 18 ) and th...
6930326	Semiconductor circuit and method of fabricating the same According to the invention, a plurality of semiconductor devices which are required to have conformance are formed from crystalline semiconductor films having uniform crystallinity on the same line, and a semiconductor circuit in which v...
6873055	Integrated circuit arrangement with field-shaping electrical conductor An integrated circuit arrangement includes at least one electrical conductor that, when a current flows through it, produces a magnetic field that acts on at least a further part of the circuit configuration, wherein seen in cross-sectio...
6818496	Silicon on insulator DRAM process utilizing both fully and partially depleted devices This invention relates to the field of semiconductor integrated circuits and, particularly to stand-alone and embedded memory chips fabricated on Silicon-on-Insulator (SOI) substrates and devices. Partially depleted (PD) and fully deplet...
6812136	Method of making a semiconductor device having a multilayer metal film of titanium/titanium nitride/tungsten/tungsten carbide According to the present invention, when a wiring layer using copper is formed, an interlayer insulation film is formed on a semiconductor substrate having a conductive portion of an element. A contact hole, which is connected to at leas...
6787804	Semiconductor acceleration sensor A semiconductor acceleration sensor includesa non-single-crystal-silicon-based substrate, an insulating beam structure having a movable section and a stationary section, at least one piezoresistor positioned on the beam structure, an ins...
6734499	Operation method of semiconductor devices An insulated gate field effect transistor comprises a non-single-crystalline semiconductor layer formed on a substrate, a gate electrode is formed on a portion of the surface of said semiconductor layer, and a gate insulating film is dis...
6720575	Semiconductor device with a semiconductor layer over a surface having a recess pitch no smaller than 0.3 microns An insulating film 103 for making an under insulating layer 104 is formed on a quartz or semiconductor substrate 100 . Recesses 105 a to 105 d corresponding to recesses 101 a to 101 d of the substrate 100 are formed on the...
6707064	Test element group structure A semiconductor wafer includes a plurality of chip areas having circuit elements, a scribe line area for defining the chip areas, and a plurality of test element group (TEG) modules. The TEG modules are group formed on the scribe line ar...
6664566	Photoelectric conversion device and method of making the same A photoelectric conversion device has a non-single-crystal semiconductor laminate member formed on a substrate having a conductive surface, and a conductive layer formed on the non-single-crystal semiconductor laminate member. The non-si...
6600196	Thin film transistor, and manufacturing method thereof The present invention relates to minimizing a leakage current in a floating island portion formed in a thin film transistor. More specifically, the present invention is directed to a thin film transistor including: a source electrode 14...
6576925	Thin film transistor, liquid crystal display panel, and manufacturing method of thin film transistor The present invention relates to minimizing a leakage current in a floating island region formed in a thin film transistor, and to maintaining a large ON-current required for an operation of the TFT. More specifically, the present invent...
6521991	Thermoelectric module Connection of the leads for a thermoelectric module is readily accomplished, and after connection, the tensile strength of the connection is enhanced. One ends of the front and back side lead patterns for the thermoelectric module, forme...
6448577	Semiconductor device with grain boundaries A high quality semiconductor device comprising at least a semiconductor film having a microcrystal structure is disclosed, wherein said semiconductor film has a lattice distortion therein and comprises crystal grains at an average diamet...
6346716	Semiconductor material having particular oxygen concentration and semiconductor device comprising the same A photoelectric conversion device has a non-single-crystal semiconductor laminate member formed on a substrate having a conductive surface, and a conductive layer formed on the non-single-crystal semiconductor laminate member. The non-si...
6294814	Cleaved silicon thin film with rough surface A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of introducing energetic particles (22) through a surface of a donor substrate (10) to a selected depth (20) underneath the surface, wh...
6288412	Thin film transistors for display devices having two polysilicon active layers of different thicknesses A method of manufacturing a polycrystalline silicon film having a particular field effect mobility is disclosed. A first polycrystalline silicon film is formed on a transparent insulation substrate. The surface of the silicon film is oxi...
6265730	Thin-film transistor and method of producing the same A thin-film transistor is provided in which the thickness of the insulating film is optimized. A gate electrode is formed on a transparent substrate. A silicon nitride film and a silicon oxide film, acting as a gate insulating film, are ...
6225667	Leaky lower interface for reduction of floating body effect in SOI devices A silicon on insulator (SOI) device includes an electrically-conducting interface region along a portion of the interface between the insulator and a semiconductor layer atop the insulator. The electrically-conducting interface region pr...
6184541	Thin film transistor and method of producing the same On the polycrystal semiconductor film 3 formed on the insulating substrate 1, the source 6 and drain 7 in LDD structure having a low concentration region 4 and a high concentration region 5 are formed. The region 4 has a low impurity con...
6144041	Semiconductor device having an active layer with no grain boundary A method of manufacturing a semiconductor includes the steps of: forming a first semiconductor film on a substrate having an insulating surface; applying an energy to the first semiconductor film to crystallize the first semiconductor fi...
6140667	Semiconductor thin film in semiconductor device having grain boundaries To provide a semiconductor device having a function equivalent to that of IGFET, an activation layer is formed by a crystal silicon film crystallized by using a catalyst element helping promote crystallization and a heating treatment is ...
6114734	Transistor structure incorporating a solid deuterium source for gate interface passivation The present invention is a method for improving transistor channel hot carrier reliability by incorporating a solid deuterium source into the transistor structure. This is accomplished by using a deuterium containing source gas for forma...
6093937	Semiconductor thin film, semiconductor device and manufacturing method thereof A semiconductor device includes a substrate having an insulating film on its surface, and an active layer made of a semiconductive thin film on the substrate surface. The thin film contains a mono-domain region formed of multiple columna...
6057557	Semiconductor substrate semiconductor device and liquid crystal display device A method of forming an Si film by a bias sputtering process comprises the steps of generating plasma between a target electrode holding a target material provided in a vacuum container and a substrate electrode holding a deposited film f...
6011271	Semiconductor device and method of fabricating the same In a semiconductor device, concave sections in which an opening area becomes small in proportion as a depth becomes deep are formed in a crystal layer, and a quantum structure is formed on at least one crystal face of a bottom section of...
5959313	Thin film semiconductor having a monocrystalline region containing carbon, nitrogen and oxygen and crystallization promotor metal component Regions 106 which can be regarded as being monocrystalline are formed locally by irradiating with laser light, and at least the channel-forming region 112 is constructed using these regions. With thin-film transistors which have such a c...
5959312	Sensor with doped microcrystalline silicon channel leads with bubble formation protection means A sensor device includes a sensing element and a thin film transistor (TFT), and the TFT's channel leads include semiconductor channel leads formed in a layer of microcrystalline silicon (μc-Si). The sensing element is formed in a semic...
5950067	Method of fabricating a thermoelectric module A method of fabricating a thermoelectric module in which a plurality of thermoelectric chips are arranged in a matrix between first and second dielectric substrates and electrically connected in series so as to heat one of the substrates...
5923050	Amorphous silicon TFT An amorphous silicon thin-film transistor as a switching element for a thin-film transistor liquid crystal display, having improved characteristics by making better an ohmic contact layer and an active layer, and a method of fabricating ...
5808318	Polycrystalline semiconductor thin film for semiconductor TFT on a substrate having a mobility in a longitudinal direction greater than in a width direction A polycrystalline semiconductor thin film formed in a stripe shape on an insulating substrate wherein crystal particles are arranged in a line-texture form in a longitudinal direction of a stripe; an electric field effect mobility ν L ...
5744818	Insulated gate field effect semiconductor device A high quality semiconductor device comprising at least a semiconductor film having a microcrystal structure is disclosed, wherein said semiconductor film has a lattice distortion therein and comprises crystal grains at an average diamet...
5731613	Semiconductor device having a monocrystalline layer composed of carbon, oxygen, hydrogen and nitrogen atoms Regions 106 which can be regarded as being monocrystalline are formed locally by irradiating with laser light, and at least the channel-forming region 112 is constructed using these regions. With thin-film transistors which have such a c...
5682037	Thin film detector of ultraviolet radiation, with high spectral selectivity option Thin film detector of ultraviolet radiation with high spectral selectivity option, and a structure placed between two electrodes, formed by the superposition of semiconductor thin films such as hydrogenated amorphous silicon and its allo...
5644145	Process for the formation of an amorphous silicon deposited film with intermittent irradiation of inert gas plasma A process for forming a silicon-containing amorphous film on a substrate which comprises (a) step of depositing a silicon-containing amorphous film on said substrate and (b) step of irradiating plasma of inert gas to said silicon-contain...
5565691	Thin film semiconductor system In a thin film semiconductor device having a substrate (1), an active layer (3, 6, 9), a gate insulation layer (4), and a gate electrode (5), the active layer is produced through the steps of producing an amorphous silicon layer on said ...
5371380	Si- and/or Ge-containing non-single crystalline semiconductor film with an average radius of 3.5 A or less as for microvoids contained therein and a microvoid density 1×10.sup.(19) (cm.sup.-3) or less A non-single crystalline semiconductor containing at least one kind of atoms selected from the group consisting of silicon atoms (Si) and germanium atoms (Ge) as a matrix, and at least one kind of atoms selected from the group consisting...
5308999	MOS FET having a thin film SOI structure The breakdown voltage of an MIS field effect transistor having an SOI structure is improved by forming a gate electrode on the top surface and two side surfaces of a channel region of the SOI layer and by partially extending the gate ele...
5103284	Semiconductor with ordered clusters A semiconductor body includes ordered clusters of less then 100 angstroms in size and preferably, no more than 12 to 30 angstroms in size. The material is characterized by a decoupling of physical properties of the material from the morp...
5060041	Amorphous silicon photosensor An amorphous silicon photosensor comprising a substrate, a lower electrode formed on the substrate, an amorphous silicon photoelectric conversion layer formed on the lower electrode, and an upper electrode formed on the amorphous silicon...
5051786	Passivated polycrystalline semiconductors quantum well/superlattice structures fabricated thereof The internal grain boundaries and intergranular spaces of polycrystalline semiconductor material may be passivated with an amorphous material, to substantially eliminate the dangling bonds at the internal grain boundaries. The passivated...
5034795	Electrically insulating substrate Disclosed is a substrate particularly designed to bear an active structure made according to thin-film technology. The advantage of the disclosed substrate is that it can be made in large sizes and at low cost. To this end, the substrate...

Matches 1 - 50 out of 56	1 2 >