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Matches 1 - 50 out of 141	1 2 3 >

Document	Document Title
7449712	CMOS image sensor and method for fabricating the same A CMOS image sensor includes a substrate including silicon, a silicon germanium (SiGe) epitaxial layer formed over the substrate, the SiGe epitaxial layer formed through epitaxial growth and doped with a predetermined concentration level...
7427779	Microstructure for formation of a silicon and germanium on insulator substrate of Si1-XGeX type The microstructure is designed for formation of a silicon and germanium on insulator substrate of Si 1-Xf Ge Xf type, with Xf comprised between a first value that is not zero and 1. The microstructure is formed by stacking of a silicon ...
7423283	Strain-silicon CMOS using etch-stop layer and method of manufacture Recesses are formed in the drain and source regions of an MOS transistor. An ohmic contact layer is formed in the recesses, and a stressed silicon-nitride layer is formed over the ohmic contact layer. The recesses allow the stressed sili...
7417248	Transistor with shallow germanium implantation region in channel A method of manufacturing a transistor and a structure thereof, wherein a very shallow region having a high dopant concentration of germanium is implanted into a channel region of a transistor at a low energy level, forming an amorphous ...
7361420	Structure, magnetic recording medium, and method of producing the same To provide a filmy structure of a nanometer size having a phase-separated structure effective for the case where a compound can be formed between two kinds of materials. A structure constituted by a first member containing a compound bet...
7348598	Thin film transistor and liquid crystal display device using the same A TFT, in which source and drain electrodes having concentric circular shapes are formed, reduces an OFF current caused by a leakage current and optimizes an ON current and a stray capacitance between gate and source electrodes. The TFT ...
7341883	Silicon germanium semiconductive alloy and method of fabricating same A silicon germanium (SiGe) semiconductive alloy is grown on a substrate of single crystalline Al 2 O 3 . A {111} crystal plane of a cubic diamond structure SiGe is grown on the substrate's {0001} C-plane such that a <110> orientati...
7339188	Polycrystalline silicon film containing Ni The present invention is related to a polycrystalline silicon film containing Ni which is formed by crystallizing an amorphous silicon layer containing nickel. The present invention includes a polycrystalline silicon film wherein the pol...
7303949	High performance stress-enhanced MOSFETs using Si:C and SiGe epitaxial source/drain and method of manufacture A semiconductor device and method of manufacturing a semiconductor device. The semiconductor device includes channels for a pFET and an nFET. A SiGe layer is selectively grown in the source and drain regions of the pFET channel and a Si:...
7297977	Semiconductor device One exemplary embodiment includes a semiconductor device. The semiconductor device comprising a channel including one or more of a metal oxide including zinc-gallium, cadmium-gallium, cadmium-indium.
7274055	Method for improving transistor performance through reducing the salicide interface resistance An embodiment of the invention reduces the external resistance of a transistor by utilizing a silicon germanium alloy for the source and drain regions and a nickel silicon germanium self-aligned silicide (i.e., salicide) layer to form th...
7262428	Strained Si/SiGe/SOI islands and processes of making same A process of making a strained silicon-on-insulator structure is disclosed. A recess is formed in a substrate to laterally isolate an active area. An undercutting etch forms a bubble recess under the active area to partially vertically i...
7259427	Semiconductor device and method of manufacturing the same The present invention relates to a semiconductor device including a circuit composed of thin film transistors having a novel GOLD (Gate-Overlapped LDD (Lightly Doped Drain)) structure. The thin film transistor comprises a first gate elec...
7259387	Nonvolatile semiconductor memory device A nonvolatile memory element is formed by layering a lower electrode, a variable resistor and an upper electrode in sequence. The variable resistor is formed in which crystallinity and amorphism are mixed. Thus, the nonvolatile memory el...
7211458	Methods of fabricating strained semiconductor-on-insulator field-effect transistors and related devices A method of fabricating a semiconductor device includes forming a strained first semiconductor layer on an insulating layer that is between second semiconductor layers. The strained first semiconductor layer may be epitaxially grown from...
7205586	Semiconductor device having SiGe channel region A HDTMOS includes a Si substrate, a buried oxide film and a semiconductor layer. The semiconductor layer includes an upper Si film, an epitaxially grown Si buffer layer, an epitaxially grown SiGe film, and an epitaxially grown Si film. F...
7196400	Semiconductor device with enhanced orientation ratio and method of manufacturing same An object is to enhance the orientation ratio of a crystalline semiconductor film obtained by crystallizing an amorphous semiconductor film while using as a substrate a less-heat-resistive material such as glass thereby providing a semic...
7176504	SiGe MOSFET with an erosion preventing Six1Gey1 layer A semiconductor device is provided. The semiconductor device comprises a substrate, a gate structure, a spacer, a Si x Ge y layer and a Si x Ge y protection layer. The gate structure is deposited on the substrate and the spacer is depo...
7176481	In situ doped embedded sige extension and source/drain for enhanced PFET performance Disclosed is an integrated circuit structure and a method of making such a structure that has a substrate and P-type and N-type transistors on the substrate. The N-type transistor extension and source/drain regions comprise dopants impla...
7157349	Method of manufacturing a semiconductor device with field isolation regions consisting of grooves filled with isolation material A method of manufacturing a semiconductor device comprising a silicon body ( 1 ) having a surface ( 4 ) provided with field isolation regions ( 2 ) enclosing active regions ( 3 ). In this method, on the surface of the silicon body there ...
7145175	Semiconductor circuit and method of fabricating the same According to the invention, a plurality of semiconductor devices which are required to have conformance are formed from crystalline semiconductor films having uniform crystallinity on the same line, and a semiconductor circuit in which v...
7119369	FET having epitaxial silicon growth A field-effect transistor has a channel region in a bulk semiconductor substrate, a first source/drain region on a first side of the channel region, a second source/drain region on a second side of the channel region, and an extension of...
7112836	Method of forming a chalcogenide memory cell having a horizontal electrode and a memory cell produced by the method A horizontal electrode having a small cross-section makes electrical contact with a chalcogenide memory element. The dimensions of the cross-section are controlled by conventional deposit/etch semiconductor processing steps. The resultin...
7081387	Damascene gate multi-mesa MOSFET A multi-mesa FET structure with doped sidewalls for source/drain regions and methods for forming the same are disclosed. The exposure of the source and drain sidewalls during the manufacture enables uniform doping of the entire sidewalls...
7078345	Method for manufacturing a semiconductor device There is disclosed a method of manufacturing a semiconductor device comprising forming a diffusion region containing arsenic impurity at a concentration of 1×10 20 cm −3 or more in an element region of Si substrate which is isolated...
7023018	SiGe transistor with strained layers The present invention provides, in one embodiment, a P-type Metal Oxide Semiconductor (PMOS) device ( 100 ). The device ( 100 ) comprises a tensile-strained silicon layer ( 105 ) located on a silicon-germanium substrate ( 110 ) and silic...
7015507	Thin film transistor and method of fabricating the same Provided is a non-single-crystal germanium thin film transistor having a gate insulating film capable of reducing the interface state density between an active layer and the gate insulating film. This thin film transistor has an active l...
7009208	Memory device and method of production and method of use of same and semiconductor device and method of production of same A memory device able to be produced without requiring high precision alignment, a method of production of the same, and a method of use of a memory device produced in this way, wherein a peripheral circuit portion (first semiconductor po...
7009200	Field effect transistor A field effect transistor comprises a source and a drain, and a channel layer of Si 1-x-y Ge x C y crystal (1>x>0, 1>y≧0). Ge composition increases toward a drain end, in a vicinity of a source end of the channel layer.
7005676	Semiconductor device manufacturing method There is here disclosed a semiconductor device manufacturing method comprising a step of forming an island region including a monocrystalline Si 1-x-y Ge x C y layer (1>x>0, 1>y≧0) and a peripheral region including an amorpho...
6969878	Surround-gate semiconductor device encapsulated in an insulating medium A semiconductor device is provided that includes a semiconductor channel region extending above a semiconductor substrate in a longitudinal direction between a semiconductor source region and a semiconductor drain region, and a gate regi...
6969870	Semiconductor device having an amorphous silicon-germanium gate electrode A silicon germanium layer is deposited over a semiconductor substrate with a gate insulating film interposed between the substrate and the silicon germanium layer. Then, an upper silicon layer in an amorphous state is deposited on the si...
6951802	Crystalline semiconductor film, method of manufacturing the same, and semiconductor device A spin addition method for catalyst elements is simple and very important technique, because the minimum amount of a catalyst element necessary for crystallization can be easily added by controlling the catalyst element concentration wit...
6936875	Insulated-gate field-effect transistor, method of fabricating same, and semiconductor device employing same With the invention, it is possible to avoid deterioration in short-channel characteristics, caused by a silicon germanium layer coming into contact with the channel of a strained SOI transistor. Further, it is possible to fabricate a dou...
6930326	Semiconductor circuit and method of fabricating the same According to the invention, a plurality of semiconductor devices which are required to have conformance are formed from crystalline semiconductor films having uniform crystallinity on the same line, and a semiconductor circuit in which v...
6927417	Photoelectric conversion element and method of manufacturing the same In a back-surface electrode type photoelectric conversion element having electrodes and semiconductor layers for collecting carriers disposed only on a back surface side of a semiconductor substrate, a semiconductor thin film that is lar...
6924216	Semiconductor device having improved doping profiles and method of improving the doping profiles of a semiconductor device A method of forming the active regions of field effect transistors is proposed. According to the proposed method, shallow implanting profiles for both the halo structures and the source and drain regions can be obtained by carrying out a...
6921914	Process for producing semiconductor article using graded epitaxial growth A process for producing monocrystalline semiconductor layers. In an exemplary embodiment, a graded Si 1-x Ge x (x increases from 0 to y) is deposited on a first silicon substrate, followed by deposition of a relaxed Si 1-y Ge y layer, ...
6885028	Transistor array and active-matrix substrate A transistor array includes conductor lines, function lines, and transistors. Each of the conductor lines includes a core and a conductor layer that covers the core. Each of the function lines includes a core, at least the surface of whi...
6872972	Method for forming silicon film with changing grain size by thermal process Roughly described, a silicon layer transitions from polysilicon at one surface to amorphous silicon at the opposite surface. The transition can be monotonic, and can be either continuous or it can change abruptly from polysilicon to amor...
6872638	Method of manufacturing a semiconductor device A method of performing irradiation of laser light is given as a method of crystallizing a semiconductor film. However, if laser light is irradiated to a semiconductor film, the semiconductor film is instantaneously melted and expands loc...
6856002	Graded GexSe100-x concentration in PCRAM The present invention provides a design for a PCRAM element which incorporates multiple metal-containing germanium-selenide glass layers of diverse stoichiometries. The present invention also provides a method of fabricating the disclose...
6855992	Structure and method for fabricating configurable transistor devices utilizing the formation of a compliant substrate for materials used to form the same A semiconductor structure includes a monocrystalline silicon substrate, an amorphous oxide material overlying the monocrystalline silicon substrate, a monocrystalline perovskite oxide material overlying the amorphous oxide material, and ...
6852602	Semiconductor crystal film and method for preparation thereof A multi-layer film 10 is formed by stacking a Si 1-x1-y1 Ge x1 C y1 layer (0≦x1<1 and 0<y1<1) having a small Ge mole fraction, e.g., a Si 0.785 Ge 0.2 C 0.015 layer 13 , and a Si 1-x2-y2 Ge x2 C y2 layer (0<x2≦1 and...
6847093	Semiconductor integrated circuit device A semiconductor integrated circuit device is formed by a semiconductor substrate having an SiGe layer and a first Si layer epitaxially grown thereover, and on which there are element formation regions each partitioned by element isolatio...
6838695	CMOS device structure with improved PFET gate electrode A semiconductor device structure includes a substrate, a dielectric layer disposed on the substrate, first and second stacks disposed on the dielectric layer. The first stack includes a first silicon layer disposed on the dielectric laye...
6815802	Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology A SiGe bipolar transistor containing substantially no dislocation defects present between the emitter and collector region and a method of forming the same are provided. The SiGe bipolar transistor includes a collector region of a first ...
6815269	Thin-film transistor and method for manufacturing the same A thin-film transistor is formed by a polycrystalline silicon film having a thin-film part and a thick-film part, the thin-film part minimally being used as a channel part. The polycrystalline silicon film is formed by laser annealing wi...
6812490	Thin-film transistor, panel, and methods for producing them The present invention provide an LDD type TFT having excellent properties, particularly for a liquid crystal display unit. For this purpose, a top gate type LDDTFT gate electrode is converted into a two-stage structure by use of a chemic...
6800874	CMOS process for double vertical channel thin film transistor A CMOS process for double vertical channel thin film transistor (DVC TFT). This process fabricates a CMOS with a double vertical channel (DVC) structure and defines the channel without an additional mask. The DVC structure of the CMOS si...

Matches 1 - 50 out of 141	1 2 3 >