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Matches 1 - 50 out of 246	1 2 3 4 5 >

Document	Document Title
7442959	Semiconductor device having identification number, manufacturing method thereof and electronic device An electronic device includes a semiconductor chip storing an identification number of N-bits and an antenna coupled to the semiconductor chip that sends out the identification number of N-bits. In order to provide a secure and efficient...
7429752	Method and structure for forming strained SI for CMOS devices A semiconductor device includes a semiconductor substrate having at least one gap, extending under a portion of the semiconductor substrate. A gate stack is on the semiconductor substrate. A strain layer is formed in at least a portion o...
7427779	Microstructure for formation of a silicon and germanium on insulator substrate of Si1-XGeX type The microstructure is designed for formation of a silicon and germanium on insulator substrate of Si 1-Xf Ge Xf type, with Xf comprised between a first value that is not zero and 1. The microstructure is formed by stacking of a silicon ...
7427775	Fabricating strained channel epitaxial source/drain transistors The mobility of carriers may be increased in strained channel epitaxial source/drain transistors. Doped silicon material may be blanket deposited after removing ion implanted source/drain regions. The blanket deposition forms amorphous f...
7427773	Layer transfer of low defect SiGe using an etch-back process A method for forming strained Si or SiGe on relaxed SiGe on insulator (SGOI) or a SiGe on Si heterostructure is described incorporating growing epitaxial Si 1−y Ge y layers on a semiconductor substrate, smoothing surfaces by Chemo-Mec...
7417250	Strained-silicon device with different silicon thicknesses A method of manufacturing a semiconductor device includes providing a strained-silicon semiconductor layer over a silicon germanium layer, and partially removing a first portion of the strained-silicon layer. The strained-silicon layer i...
7411214	High performance FET devices and methods thereof Structure and methods of fabrication are disclosed for an enhanced FET devices in which dopant impurities are prevented from diffusing through the gate insulator. The structure comprises a Si:C, or SiGe:C, layer which is sandwiched betwe...
7407421	Light source, optical pickup, and electronic apparatus A light source of the present invention includes: a semiconductor light emitting device which has a light emitting face and emits light from part of the light emitting face; a container which has a light transmitting window for transmitt...
7385222	Thin film transistors and semiconductor constructions A method of forming a thin film transistor relative to a substrate includes, a) providing a thin film transistor layer of polycrystalline material on a substrate, the polycrystalline material comprising grain boundaries; b) providing a f...
7365410	Semiconductor structure having a metallic buffer layer and method for forming A method for forming a semiconductor structure including providing a semiconductor substrate, forming a metallic buffer layer over the semiconductor substrate, forming an amorphous semiconductor layer over the metallic buffer layer, and ...
7365362	Semiconductor device and method of fabricating semiconductor device using oxidation According to one aspect of the invention, there is provided a semiconductor device fabrication method comprising: forming a gate insulating film on a semiconductor substrate; forming a film containing a predetermined semiconductor...
7361592	Method for producing a component comprising at least one germanium-based element and component obtained by such a method The method successively comprises production, on a substrate, of a stack of layers comprising at least one first layer made from germanium and silicon compound initially having a germanium concentration comprised between 10% and 50%. The...
7335950	Semiconductor device and method of making thereof To provide a thin film transistor having a low OFF characteristic and to provide P-channel type and N-channel type thin film transistors where a difference in characteristics of the P-channel type and the N-channel type thin film transis...
7317207	Semiconductor device, method of making the same and liquid crystal display device To provide TFT of improved low-temperature polycrystalline layer that has higher electron mobility and assures less fluctuation in manufacture in view of realizing a liquid-crystal display device having a large display area by utilizing ...
7315065	Method for fabricating SiGe-on-insulator (SGOI) and Ge-on-insulator (GOI) substrates A method for fabricating germanium-on-insulator (GOI) substrate materials, the GOI substrate materials produced by the method and various structures that can include at least the GOI substrate materials of the present invention are provi...
7307282	Thin film transistors and semiconductor device The TFT has a channel-forming region formed of a crystalline semiconductor film obtained by heat-treating and crystallizing an amorphous semiconductor film containing silicon as a main component and germanium in an amount of not smaller ...
7297978	Semiconductor thin film and semiconductor device After an amorphous semiconductor thin film is crystallized by utilizing a catalyst element, the catalyst element is removed by performing a heat treatment in an atmosphere containing a halogen element. A resulting crystalline semiconduct...
7262431	Semiconductor thin film forming method and semiconductor device A polycrystal thin film forming method comprising the step of forming a semiconductor thin film on a substrate 14 , and the step of flowing a heated gas to the semiconductor thin film while an energy beam 38 is being applied to the se...
7259427	Semiconductor device and method of manufacturing the same The present invention relates to a semiconductor device including a circuit composed of thin film transistors having a novel GOLD (Gate-Overlapped LDD (Lightly Doped Drain)) structure. The thin film transistor comprises a first gate elec...
7235812	Method of creating defect free high Ge content (>25%) SiGe-on-insulator (SGOI) substrates using wafer bonding techniques A method for achieving a substantially defect free SGOI substrate which includes a SiGe layer that has a high Ge content of greater than about 25 atomic % using a low temperature wafer bonding technique is described. The wafer bonding pr...
7235811	Thin film structure from LILAC annealing A system and method are provided for reducing film surface protrusions in the fabrication of LILAC films. The method comprises: forming an amorphous film with a first thickness; annealing the film using a LILAC process, with beamlets hav...
RE39640	Conductive isostructural compounds A family of isostructural compounds have been prepared having the general formula A n Pb m Bi n O 2n+m . These compounds possess a NaCl lattice type structure as well as low thermal conductivity and controlled electrical conductivity. Fu...
7217952	Method of manufacturing a semiconductor device and semiconductor manufacturing apparatus A technique for manufacturing TFTs having little dispersion in their electrical characteristics is provided. Contamination of a semiconductor film is reduced by performing oxidation processing having an organic matter removing effect, fo...
7205586	Semiconductor device having SiGe channel region A HDTMOS includes a Si substrate, a buried oxide film and a semiconductor layer. The semiconductor layer includes an upper Si film, an epitaxially grown Si buffer layer, an epitaxially grown SiGe film, and an epitaxially grown Si film. F...
7199399	Thin film transistor, thin film transistor substrate, and methods for manufacturing the same A thin film transistor includes a channel layer of a specific shape, a thermal gradient inducer body, a gate insulating film, a gate electrode and an interlayer insulating film, a source electrode and a drain electrode. The channel layer...
7199303	Optical energy conversion apparatus An optical energy conversion apparatus 10 includes a first impurity doped semiconductor layer 5 , formed on a substrate, and which is of a semiconductor material admixed with a first impurity, an optically active layer 6 , formed on ...
7196400	Semiconductor device with enhanced orientation ratio and method of manufacturing same An object is to enhance the orientation ratio of a crystalline semiconductor film obtained by crystallizing an amorphous semiconductor film while using as a substrate a less-heat-resistive material such as glass thereby providing a semic...
7187057	Nitrogen controlled growth of dislocation loop in stress enhanced transistor Known techniques to improve metal-oxide-semiconductor field effect transistor (MOSFET) performance is to add a high stress dielectric layer to the MOSFET. The high stress dielectric layer introduces stress in the MOSFET that causes elect...
7157349	Method of manufacturing a semiconductor device with field isolation regions consisting of grooves filled with isolation material A method of manufacturing a semiconductor device comprising a silicon body ( 1 ) having a surface ( 4 ) provided with field isolation regions ( 2 ) enclosing active regions ( 3 ). In this method, on the surface of the silicon body there ...
7154118	Bulk non-planar transistor having strained enhanced mobility and methods of fabrication A method of a bulk tri-gate transistor having stained enhanced mobility and its method of fabrication. The present invention is a nonplanar transistor having a strained enhanced mobility and its method of fabrication. The transistor has ...
7145175	Semiconductor circuit and method of fabricating the same According to the invention, a plurality of semiconductor devices which are required to have conformance are formed from crystalline semiconductor films having uniform crystallinity on the same line, and a semiconductor circuit in which v...
7141820	Structures with planar strained layers A structure including a compressively strained semiconductor layer, the compressively strained layer having a strain greater than or equal to 0.25%. A tensilely strained semiconductor layer may be formed over the compressively strained l...
7138668	Heterojunction diode with reduced leakage current An aspect of the present invention provides a semiconductor device that includes a first semiconductor region of a first conductivity type and a second semiconductor region of a second conductivity type, having a different band gap from ...
7115905	Semiconductor device including forming an amorphous silicon layer over and reacting with a silicide layer A semiconductor device has a SALICIDE structure with low leakage currents, while maintaining shallow source and drain regions. A method of manufacturing the semiconductor device includes forming source and drain regions in a first semico...
7102153	Strained silicon forming method with reduction of threading dislocation density A method for growing strained Si layer and relaxed SiGe layer with multiple Ge quantum dots (QDs) on a substrate is disclosed. The method can reduce threading dislocation density, decrease surface roughness of the strained silicon and fu...
7084460	Method for fabricating SiGe-on-insulator (SGOI) and Ge-on-insulator (GOI) substrates A method for fabricating germanium-on-insulator (GOI) substrate materials, the GOI substrate materials produced by the method and various structures that can include at least the GOI substrate materials of the present invention are provi...
7081387	Damascene gate multi-mesa MOSFET A multi-mesa FET structure with doped sidewalls for source/drain regions and methods for forming the same are disclosed. The exposure of the source and drain sidewalls during the manufacture enables uniform doping of the entire sidewalls...
7034337	Semiconductor device and method of manufacturing the same The orientation ratio of a crystalline semiconductor film obtained by crystallizing an amorphous semiconductor film through heat treatment and irradiation of intense light such as laser light, ultraviolet rays, or infrared rays is enhanc...
7026193	Method of manufacturing a semiconductor device having TFTs with uniform characteristics In a circuit including at least one thin film transistor formed on an insulating substrate, a region 105 to which metal elements that promote crystallinity are added is disposed apart from a semiconductor island region 101 that forms...
7023018	SiGe transistor with strained layers The present invention provides, in one embodiment, a P-type Metal Oxide Semiconductor (PMOS) device ( 100 ). The device ( 100 ) comprises a tensile-strained silicon layer ( 105 ) located on a silicon-germanium substrate ( 110 ) and silic...
7015507	Thin film transistor and method of fabricating the same Provided is a non-single-crystal germanium thin film transistor having a gate insulating film capable of reducing the interface state density between an active layer and the gate insulating film. This thin film transistor has an active l...
7005676	Semiconductor device manufacturing method There is here disclosed a semiconductor device manufacturing method comprising a step of forming an island region including a monocrystalline Si 1-x-y Ge x C y layer (1>x>0, 1>y≧0) and a peripheral region including an amorpho...
6987072	Method of producing semiconductor crystal A method for fabricating a semiconductor crystal that has a first step for forming a semiconductor crystal layer ( 202 ) that contains carbon atoms and at least one kind of Group IV element other than carbon on a substrate ( 201 ), a sec...
6956235	Semiconductor device The orientation of a crystalline semiconductor film obtained by crystallizing an amorphous semiconductor film is improved and a TFT formed from this crystalline semiconductor film is provided. In a semiconductor device whose TFT is forme...
6930326	Semiconductor circuit and method of fabricating the same According to the invention, a plurality of semiconductor devices which are required to have conformance are formed from crystalline semiconductor films having uniform crystallinity on the same line, and a semiconductor circuit in which v...
6927419	Semiconductor device A polycrystal thin film forming method comprising the step of forming a semiconductor thin film on a substrate 14 , and the step of flowing a heated gas to the semiconductor thin film while an energy beam 38 is being applied to the se...
6927417	Photoelectric conversion element and method of manufacturing the same In a back-surface electrode type photoelectric conversion element having electrodes and semiconductor layers for collecting carriers disposed only on a back surface side of a semiconductor substrate, a semiconductor thin film that is lar...
6921914	Process for producing semiconductor article using graded epitaxial growth A process for producing monocrystalline semiconductor layers. In an exemplary embodiment, a graded Si 1-x Ge x (x increases from 0 to y) is deposited on a first silicon substrate, followed by deposition of a relaxed Si 1-y Ge y layer, ...
6919269	Production method for a semiconductor component A method for fabricating a semiconductor component includes: deposition of a polysilicon layer on a substrate, deposition of a precursor layer on the polysilicon layer, and deposition of a protective layer on the precursor layer. A cryst...
6894310	Semiconductor constructions comprising monocrystalline silicon together with semiconductive materials comprising elements other than silicon The invention includes a method of forming semiconductor circuitry. A monocrystalline silicon substrate is provided, and a mask is formed which covers a first portion of the substrate and leaves a second portion uncovered. A trench is fo...

Matches 1 - 50 out of 246	1 2 3 4 5 >