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7473972 |
A thin film transistor substrate includes a thin film transistor of a first conductivity type, a semiconductor layer having a channel region of the first conductivity type placed between the source/drain regions, a gate electrode formed ...
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7470930 |
A silicon carbide semiconductor device includes a semiconductor element disposed in a semiconductor substrate having a first conductive type silicon carbide layer and a silicon substrate. The device includes: a trench on the silicon carb...
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7468526 |
A pair of substrates forming the active matrix liquid crystal display are fabricated from resinous substrates having transparency and flexibility. A thin-film transistor has a semiconductor film formed on a resinous layer formed on one r...
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7465958 |
A semiconductor element is operated without being affected even when the substrate is largely affected by heat shrink such as a large substrate. Furthermore, a thin film semiconductor circuit and a thin film semiconductor device each hav...
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7462895 |
A thin film transistor (TFT) array panel with signal lines that have low resistivity is presented. The TFT array panel includes an insulating substrate, a gate line formed on the insulating substrate, a gate insulating layer formed on th...
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7456431 |
An organic light emitting display that includes a pixel electrode and an organic light emitting member formed on the pixel electrode. The organic light emitting member has an inclined surface, and a common electrode is formed on the ligh...
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7456429 |
The present invention provides a distribution manifold for thin-film material deposition onto a substrate comprising a plurality of inlet ports for a sequence of gaseous materials, an output face comprising a plurality of open elongated ...
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7450100 |
A high-speed flat panel display having a long lifetime. Thin film transistors in a pixel portion having a plurality of pixels are contacted differently from thin film transistors in driving circuit portions for driving the pixels, thereb...
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7449719 |
A gate insulating film is formed using a plasma on a three-dimensional silicon substrate surface having a plurality of crystal orientations. The plasma gate insulating film experiences no increase in interface state in any crystal orient...
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7446023 |
A high-density plasma hydrogenation method is provided. Generally, the method comprises: forming a silicon (Si)/oxide stack layer; plasma oxidizing the Si/oxide stack at a temperature of less than 400° C., using a high density plasma so...
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7445972 |
A memory cell suitable for being disposed over a substrate is provided. The memory cell includes a poly-silicon island, a first dielectric layer, a trapping layer, a second dielectric layer and a control gate. The poly-silicon island is ...
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7442960 |
A thin film transistor (TFT) including a semiconductor film that may be simply patterned, a method of manufacturing the TFT, a flat panel display (FPD) including the TFT, and a method of manufacturing the FPD. The TFT includes a gate ele...
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7442958 |
A thin film semiconductor device is provided which includes an insulating substrate, a Si thin film formed over the insulating substrate, and a transistor with the Si thin film as a channel thereof. The Si thin film includes a polycrysta...
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7439543 |
There is provided a thin film transistor having improved reliability. A gate electrode includes a first gate electrode having a taper portion and a second gate electrode with a width narrower than the first gate electrode. A semiconducto...
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7435643 |
A dynamic random access memory (DRAM) cell is described, including a semiconductor pillar on a substrate, a capacitor on a lower portion of a sidewall of the pillar, and a vertical transistor on an upper portion of the sidewall of the pi...
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7422634 |
A high quality single crystal wafer of SiC is disclosed. The wafer has a diameter of at least about 3 inches, a warp of less than about 5 μm, a bow less than about 5 μm, and a total thickness variation of less than about 2.0 μm.
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7417252 |
The present invention discloses a high-speed flat panel display with a long lifetime, wherein thin film transistors in a pixel array portion in which a plurality of pixels are arranged and a driving circuit portion for driving the pixels...
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7414264 |
Provided are a poly crystalline silicon semiconductor device and a method of fabricating the same. Portions of a silicon layer except for gates are removed to reduce a parasitic capacitance caused from the silicon layer existing on gate ...
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7411294 |
A display device includes a display panel, and the circuit substrate is separately formed and positioned different from the array substrate of the display panel and connected to the display panel. The circuit substrate includes an insula...
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7411215 |
To achieve promotion of stability of operational function of display device and enlargement of design margin in circuit design, in a display device including a pixel portion having a semiconductor element and a plurality of pixels provid...
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7408190 |
A thin film transistor including a gate, a gate insulating layer, a semiconductor layer and a source/drain is provided. The gate is disposed over a substrate, wherein the gate comprises at least one molybdenum-niobium alloy nitride layer...
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7408187 |
A transistor device includes a transparent substrate. A high K dielectric is formed on the transparent substrate and transferred onto a flexible substrate. An organic transistor is formed on the high K dielectric.
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7402496 |
A complementary metal-oxide-semiconductor (CMOS) device includes a substrate with a first active region and a second active region; a first gate structure and a second gate structure, respectively disposed on the first active region and ...
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7394102 |
A circuit is provided which is constituted by TFTs of one conductivity type, and which is capable of outputting signals of a normal amplitude. When an input clock signal CK 1 becomes a high level, each of TFTs ( 101, 103 ) is turned on ...
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7385232 |
A dopant gradient region of a first conductivity type and a corresponding channel impurity gradient below a transfer gate and adjacent a charge collection region of a CMOS imager photodiode are disclosed. The channel impurity gradient in...
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7385222 |
A method of forming a thin film transistor relative to a substrate includes, a) providing a thin film transistor layer of polycrystalline material on a substrate, the polycrystalline material comprising grain boundaries; b) providing a f...
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7368751 |
A method of manufacturing an electronic device comprising a thin film transistor ( 42 ), comprises forming a hydrogen-containing layer ( 22 ) over a semiconductor layer ( 10;20 ), irradiating the hydrogen-containing layer so as to hydrog...
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7365410 |
A method for forming a semiconductor structure including providing a semiconductor substrate, forming a metallic buffer layer over the semiconductor substrate, forming an amorphous semiconductor layer over the metallic buffer layer, and ...
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7361932 |
A semiconductor device of a dual-gate structure including a P-channel type field-effect transistor formed at a first region of a substrate and an N-channel type field-effect transistor formed at a second region of the substrate, includes...
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7358533 |
The present invention provides an electronic device having more than two conductive layers that cross but not in contact with each other. At least one of the conductive layers comprises a width change part, a width of which changes in a ...
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7358528 |
A method for fabricating a liquid crystal display includes providing a first substrate having a pixel part and a driving circuit part, forming a gate electrode in the pixel part of the first substrate, forming a first insulation film, a ...
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7355202 |
A gate-insulated thin film transistor is disclosed. One improvement is that the thin film transistor is formed on a substrate through a blocking layer in between so that it is possible to prevent the transistor from being contaminated wi...
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7352018 |
The invention relates to a method for fabricating stacked non-volatile memory cells. Further, the invention relates to stacked non-volatile memory cells. The invention particularly relates to the field of non-volatile NAND memories havin...
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7352002 |
A method of manufacturing a thin-film semiconductor device substrate includes a step of forming a non-single crystalline semiconductor thin film on a base layer, and an annealing step of irradiating the non-single crystalline semiconduct...
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7348598 |
A TFT, in which source and drain electrodes having concentric circular shapes are formed, reduces an OFF current caused by a leakage current and optimizes an ON current and a stray capacitance between gate and source electrodes. The TFT ...
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7348593 |
An organic thin film transistor (OTFT) having an adhesive layer and a method of fabricating the same. The OTFT includes a gate electrode formed on a substrate, a gate insulating layer formed on the gate electrode and on remaining exposed...
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7348222 |
It is an object of the present invention to provide a method for removing the metal element from the semiconductor film which is different from the conventional gettering step for removing the metal element from the semiconductor film. ...
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7339190 |
A memory cell suitable for being disposed over a substrate is provided. The memory cell includes a poly-silicon island, a first dielectric layer, a trapping layer, a second dielectric layer and a control gate. The poly-silicon island is ...
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7335913 |
An electro-optical device includes a pair of substrates that are disposed to face each other with a predetermined gap therebetween, one substrate of the pair of substrates extending from the other substrate on at least one side in plan v...
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7326959 |
The present invention provides a TFT substrate that includes a plurality of TFTs each of which have a gate, a source and a drain. The plurality of the TFTs may be formed by first and second active regions formed on the substrate that eac...
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7323716 |
This invention provides a manufacturing method for fabricating on the same substrate both high voltage thin film transistors suitable for driving liquid crystal and low voltage drive high performance thin film transistors. In addition, t...
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7319237 |
A thin film transistor array substrate and a manufacturing method thereof are provided. Wherein, scan lines and data lines are disposed on a substrate to define a plurality of pixel regions. Thin film transistors are disposed in the pixe...
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7319236 |
It is an object to provide technique for forming a further minute gate electrode in a semiconductor integrated circuit. According to the present invention, a conductive film is etched while a resist mask is made to recede so as to make a...
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7317207 |
To provide TFT of improved low-temperature polycrystalline layer that has higher electron mobility and assures less fluctuation in manufacture in view of realizing a liquid-crystal display device having a large display area by utilizing ...
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7317205 |
Semiconductor layers for serving as active layers of a plurality of thin film transistors in a pixel are arranged in the same direction and irradiated with laser light with the scanning direction matched to the channel length direction o...
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7307283 |
A crystalline semiconductor film in which the position and the size of crystal grains are controlled is provided, and a TFT that can operate at high speed is obtained by forming a channel formation region of the TFT from the crystalline ...
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7307282 |
The TFT has a channel-forming region formed of a crystalline semiconductor film obtained by heat-treating and crystallizing an amorphous semiconductor film containing silicon as a main component and germanium in an amount of not smaller ...
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7297979 |
A thin film transistor array panel comprising: an insulating substrate; gate lines formed on the insulating substrate; data lines defining a display region by intersecting the gate lines while being insulated; an electrostatic dispersion...
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7297978 |
After an amorphous semiconductor thin film is crystallized by utilizing a catalyst element, the catalyst element is removed by performing a heat treatment in an atmosphere containing a halogen element. A resulting crystalline semiconduct...
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7291862 |
A method for producing a thin film transistor substrate includes the steps of: (i) depositing an amorphous semiconductor film on a transparent insulating substrate; (ii) patterning the amorphous semiconductor film so as to form insular a...
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