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Document	Document Title
7453115	Dielectric relaxation memory A capacitor structure having a dielectric layer disposed between two conductive electrodes, wherein the dielectric layer contains at least one charge trap site corresponding to a specific energy state. The energy states may be used to di...
7449719	Semiconductor device and method of manufacturing the same A gate insulating film is formed using a plasma on a three-dimensional silicon substrate surface having a plurality of crystal orientations. The plasma gate insulating film experiences no increase in interface state in any crystal orient...
7439542	Hybrid orientation CMOS with partial insulation process The present invention provides a method of integrated semiconductor devices such that different types of devices are formed upon a specific crystallographic orientation of a hybrid substrate. In accordance with the present invention, jun...
7411215	Display device and method of fabricating the same To achieve promotion of stability of operational function of display device and enlargement of design margin in circuit design, in a display device including a pixel portion having a semiconductor element and a plurality of pixels provid...
7410595	Refrigerant compositions Refrigerant composition are disclosed which comprises: (a) pentafluoroethane, trifluoromethoxydifluoromethane or hexafluorocyclopropane, or a mixture of two or more thereof, in an amount of at least 75% based on the weight of the compos...
7408193	Semiconductor device and manufacturing method thereof A semiconductor device packaged in three dimensions comprises a first thin film device, a second thin film device, and a third thin film device, each of the first, second, and third thin film devices comprising a first insulating film, a...
7402496	Complementary metal-oxide-semiconductor device and fabricating method thereof A complementary metal-oxide-semiconductor (CMOS) device includes a substrate with a first active region and a second active region; a first gate structure and a second gate structure, respectively disposed on the first active region and ...
7388248	Dielectric relaxation memory A capacitor structure having a dielectric layer disposed between two conductive electrodes, wherein the dielectric layer contains at least one charge trap site corresponding to a specific energy state. The energy states may be used to di...
7381989	Semiconductor device including upper and lower transistors and interconnection between upper and lower transistors A stacked semiconductor device comprises a lower transistor formed on a semiconductor substrate, a lower interlevel insulation film formed on the semiconductor substrate over the lower transistor, an upper transistor formed on the lower ...
7368788	SRAM cells having inverters and access transistors therein with vertical fin-shaped active regions Complementary metal oxide semiconductor (CMOS) static random access memory (SRAM) cells include at least a first inverter formed in a fin-shaped pattern of stacked semiconductor regions of opposite conductivity type. In some of these emb...
7355202	Thin-film transistor A gate-insulated thin film transistor is disclosed. One improvement is that the thin film transistor is formed on a substrate through a blocking layer in between so that it is possible to prevent the transistor from being contaminated wi...
7348598	Thin film transistor and liquid crystal display device using the same A TFT, in which source and drain electrodes having concentric circular shapes are formed, reduces an OFF current caused by a leakage current and optimizes an ON current and a stray capacitance between gate and source electrodes. The TFT ...
7327022	Assembly, contact and coupling interconnection for optoelectronics A novel micro optical system as a platform technology for electrical and optical interconnections, thermal and mechanical assembly and integration of electronic, optoelectronic, passive and active components. This platform provides optic...
7326960	Semiconductor circuit constructions The invention includes a method of forming semiconductor circuitry wherein a first semiconductor structure comprising a first monocrystalline semiconductor substrate is bonded to a second semiconductor structure comprising a second monoc...
7285798	CMOS inverter constructions Thin film transistor based three-dimensional CMOS inverters utilizing a common gate bridged between a PFET device and an NFET device. One or both of the NFET and PFET devices can have an active region extending into both a strained cryst...
7274072	Hybrid bulk-SOI 6T-SRAM cell for improved cell stability and performance The present invention provides a 6T-SRAM semiconducting structure including a substrate having an SOI region and a bulk-Si region, wherein the SOI region and the bulk-Si region have a same or differing crystallographic orientation; an is...
7262464	Semiconductor device with single crystal semiconductor layer(s) bonded to insulating surface of substrate A semiconductor device includes a substrate with an insulating surface and a single crystal semiconductor layer, which is bonded to the insulating surface of the substrate. The device further includes a first insulating layer, which is p...
7262431	Semiconductor thin film forming method and semiconductor device A polycrystal thin film forming method comprising the step of forming a semiconductor thin film on a substrate 14 , and the step of flowing a heated gas to the semiconductor thin film while an energy beam 38 is being applied to the se...
7250645	Reversed T-shaped FinFET A fin field effect transistor (FinFET) includes a reversed T-shaped fin. The FinFET further includes source and drain regions formed adjacent the reversed T-shaped fin. The FinFET further includes a dielectric layer formed adjacent surfa...
7250628	Memory devices and electronic systems comprising thyristors The invention includes SOI constructions containing one or more memory cells which include a transistor and a thyristor. In one aspect, a scalable GLTRAM cell provides DRAM-like density and SRAM-like performance. The memory cell includes...
7247528	Methods of fabricating semiconductor integrated circuits using selective epitaxial growth and partial planarization techniques Methods of fabricating a semiconductor integrated circuit having thin film transistors using an SEG technique are provided. The methods include forming an inter-layer insulating layer on a single-crystalline semiconductor substrate. A si...
7238963	Self-aligned LDD thin-film transistor and method of fabricating the same A self-aligned LDD TFT and a fabrication method thereof. A substrate is provided, on which a semiconductor layer is formed. A first masking layer is provided over a first region of the portion of the semiconductor layer. The first maskin...
7230270	Self-aligned double gate device and method for forming same In a method of forming a double gate device, a buried insulating layer having a thickness of less than about 30 nm is formed on a first substrate. A second substrate is formed on the buried insulating layer. A pad layer is formed over th...
7214963	3-D column select circuit layout in semiconductor memory devices A column select circuit in a Static Random Access Memory (SRAM) having a three-dimensional layout can include a lower CMOS layer in a substrate and an upper NMOS layer above the lower layer. An intermediate PMOS layer is located between ...
7205194	Method of fabricating a flash memory cell A method of fabricating a flash memory cell having a split gate structure. A sacrificial layer is formed on a floating gate layer formed on a semiconductor substrate. The sacrificial layer is etched to form an opening exposing a portion ...
7193270	Semiconductor device with a vertical transistor A semiconductor device which, even when a vertical transistor is adopted, is able to prevent a product yield from decreasing and performance from deteriorating, and at the same time, to achieve high-density integration of chips and high ...
7176479	Nitride compound semiconductor element A nitride compound semiconductor element having improved characteristics, productivity and yield. A nitride compound semiconductor element includes: a sapphire substrate; a first single crystalline layer of AlN formed on said sapphire su...
7166861	Thin-film transistor and method for manufacturing the same The present invention provides a thin-film transistor that is formed by using a patterning method capable of forming a semiconductor channel layer in sub-micron order and a method for manufacturing thereof that provides a thin-film trans...
7151277	Selective etching of silicon carbide films A method of etching silicon carbide using a nonmetallic mask layer. The method includes providing a silicon carbide substrate; forming a non-metallic mask layer by applying a layer of material on the substrate; patterning the mask layer ...
7148510	Electronic apparatus having a protective circuit A semiconductor display device with an interlayer insulating film in which surface levelness is ensured with a limited film formation time, heat treatment for removing moisture does not take long, and moisture in the interlayer insulatin...
7145175	Semiconductor circuit and method of fabricating the same According to the invention, a plurality of semiconductor devices which are required to have conformance are formed from crystalline semiconductor films having uniform crystallinity on the same line, and a semiconductor circuit in which v...
7135724	Structure and method for making strained channel field effect transistor using sacrificial spacer A field effect transistor (“FET”) is provided which includes a gate stack overlying a single-crystal semiconductor region of a substrate, a pair of first spacers disposed over sidewalls of said gate stack, and a pair of regions consi...
7122834	Semiconductor apparatus having adhesion layer and semiconductor thin film A semiconductor apparatus includes a substrate; an adhesion layer disposed on the substrate, the adhesion layer mainly consisting of semiconductor material; and at least one semiconductor thin film including at least one semiconductor de...
7115897	Semiconductor circuit configuration and semiconductor memory device A semiconductor circuit configuration has at least one pair of complementary operating field-effect transistors in which each transistor has a gate region, first and second source/drain regions and also a channel region with or made of a...
7112822	Semiconductor device using partial SOI substrate and manufacturing method thereof A semiconductor device includes a first semiconductor layer formed above a first region of a supporting substrate with a buried oxide layer disposed therebetween and a second semiconductor layer formed on a second region of the supportin...
7105866	Heterojunction tunneling diodes and process for fabricating same High quality epitaxial layers of compound semiconductor materials can be grown overlying large silicon wafers by first growing an accommodating buffer layer on a silicon wafer. The accommodating buffer layer is a layer of monocrystalline...
7102166	Hybrid orientation field effect transistors (FETs) A hybrid orientation semiconductor structure and method of forming the same. The structure includes (a) a semiconductor substrate comprising a first semiconductor material having a first lattice orientation; (b) a back gate region on the...
7098478	Semiconductor memory device using vertical-channel transistors The invention provides a semiconductor memory device comprising a plurality of word lines, a plurality of bit lines, and a plurality of static memory cells each having a first, second, third, fourth, fifth, and sixth transistors. While e...
7095043	Semiconductor device, semiconductor circuit module and manufacturing method of the same An (SiGe)C layer having a stoichiometric ratio of about 1:1 is locally formed on an Si layer, a large forbidden band width semiconductor device is prepared inside the layered structure thereof and an Si semiconductor integrated circuit i...
7078275	Semiconductor device and manufacturing method for same An object is to provide a semiconductor device manufacturing method which makes possible a thin film transistor which is little affected by crystal grain boundaries, even when the channel width of the thin film transistor is made larger ...
7064345	Organic field effect transistor with off-set threshold voltage and the use thereof The invention relates to an organic field effect transistor with off-set threshold voltage. Said OFET has an intermediate layer that defines a space charge region between the insulator and the semiconductor.
7026193	Method of manufacturing a semiconductor device having TFTs with uniform characteristics In a circuit including at least one thin film transistor formed on an insulating substrate, a region 105 to which metal elements that promote crystallinity are added is disposed apart from a semiconductor island region 101 that forms...
6943373	Semiconductor memory device using vertical-channel transistors The invention provides a semiconductor memory device comprising a plurality of word lines, a plurality of bit lines, and a plurality of static memory cells each having a first, second, third, fourth, fifth, and sixth transistors. While e...
6933568	Deposition method of insulating layers having low dielectric constant of semiconductor device, a thin film transistor substrate using the same and a method of manufacturing the same The present invention relates to a process for vapor depositing a low dielectric insulating film, a thin film transistor using the same, and a preparation method thereof, and more particularly to a process for vapor deposition of lowdiel...
6930326	Semiconductor circuit and method of fabricating the same According to the invention, a plurality of semiconductor devices which are required to have conformance are formed from crystalline semiconductor films having uniform crystallinity on the same line, and a semiconductor circuit in which v...
6924560	Compact SRAM cell with FinFET A method and system is disclosed for an SRAM device cell having at least one device of a first semiconductor type and at lease one device of a second semiconductor type. The cell has a first device of the first type constructed as a part...
6909115	Semiconductor device applying to the crystalline semiconductor film There is disclosed a semiconductor device and a method of fabricating the semiconductor device in which a heat treatment time required for crystal growth is shortened and a process is simplified. Two catalytic element introduction region...
6906384	Semiconductor device having one of patterned SOI and SON structure A semiconductor device includes first and second semiconductor layers and first and second MOS transistors. The first semiconductor layer is provided on and electrically connected to the semiconductor substrate. The second semiconductor ...
6894337	System and method for forming stacked fin structure using metal-induced-crystallization A method facilitates the formation of a stacked fin structure for a semiconductor device that includes a substrate. The method includes forming one or more oxide layers on the substrate and forming one or more amorphous silicon layers in...
6894310	Semiconductor constructions comprising monocrystalline silicon together with semiconductive materials comprising elements other than silicon The invention includes a method of forming semiconductor circuitry. A monocrystalline silicon substrate is provided, and a mask is formed which covers a first portion of the substrate and leaves a second portion uncovered. A trench is fo...

Matches 1 - 50 out of 298	1 2 3 4 5 6 >