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7326953 |
The invention relates to a layered construction for a Gunn diode. The layered construction comprises a series of stacked layers consisting of a first highly doped n d GaAs layer ( 3 ), a graded AlGaAs layer ( 5 ), which is placed upon t...
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7250646 |
There is provided a monolithic three dimensional TFT mask ROM array. The array includes a plurality of device levels. Each of the plurality of device levels contains a first set of enabled TFTs and a second set of partially or totally di...
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7227173 |
A method of forming a semiconductor device includes the following steps: providing a plurality of semiconductor layers; providing means for coupling signals to and/or from layers of the device; providing a quantum well disposed between a...
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7205562 |
Briefly, in accordance with an embodiment of the invention, a phase change memory and a method to manufacture a phase change memory is provided. The phase change memory may include a memory material and a first tapered contact adjacent t...
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7183568 |
A structure (and method) for a piezoelectric device, including a layer of piezoelectric material. A nanotube structure is mounted such that a change of shape of the piezoelectric material causes a change in a stress in the nanotube struc...
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7149246 |
A monolithic transceiver integrated circuit that includes a substrate, a transmitter subsystem of one or more subcircuits on the substrate, and a receiver subsystem of one or more subcircuits on the substrate. Also included is a bias cur...
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7148543 |
A semiconductor chip includes a base substrate, a bulk device region having a bulk growth layer on a part of the base substrate, an SOI device region having a buried insulator on the base substrate and a silicon layer on the buried insul...
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6900468 |
Ultra-high-density data-storage media employing indium chalcogenide, gallium chalcogenide, and indium-gallium chalcogenide films to form bit-storage regions that act as photoconductive, photovoltaic, or photoluminescent semiconductor dev...
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6855975 |
An integrated programmable conductor memory cell and diode device in an integrated circuit comprises a diode and a glass electrolyte element, the glass electrolyte element having metal ions mixed or dissolved therein and being able to se...
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6806871 |
A liquid crystal driver IC comprising: a power circuit; an electric volume for varying an output voltage from the power circuit; a temperature detector; and a correction table for storing an electric volume control value corresponding to...
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6768130 |
A method of forming a semiconductor on insulator structure in a monolithic semiconducting substrate with a bulk semiconductor structure. A first portion of a surface of the monolithic semiconducting substrate is recessed without effectin...
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5941499 |
The invention concerns a sealing valve which comprises a valve body (1) on which a sealing cylinder (8) is mounted. The sealing cylinder (8) contains a sealing stopper against which a pressure piston (18) abuts. A lever arm (23), which i...
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5914508 |
A microwave system encapsulated by two layers. The first layer is an arylcyclobutene polymer having a thickness greater than the tallest component of the system and only located in predetermined areas. Overlaying the polymer and other pr...
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5329257 |
This invention is a three layer Si x Ge 1 -x structure formed on a silicon substrate in which a thin, lightly doped Si x Ge 1 -x layer is formed between two heavily doped Si x Ge 1 -x layers. The incorporation of at least 10% germaniu...
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4789887 |
A voltage controlled oscillator includes a VCO chip that is a monolithic circuit with a Gunn diode and varactor diode intercoupled by a resonant circuit. A detector/discriminator/power divider chip is coupled to the VCO chip through a di...
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4380020 |
An active semiconductor device, such as a Gunn effect device, capable of operation at extremely high frequencies, fabricated in situ on a substrate that also serves as a dielectric waveguide to propagate energy from the device. In the em...
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4086501 |
A planar transferred electron logic device comprising a substrate of substantially insulating material and a layer of semiconductor material which exhibits a differential negative resistance through the "transferred electron effect" upon...
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3991328 |
A planar transferred electron device is biased such that the voltage across the anode and cathode electrodes is above that of a threshold voltage in the presence of which the device is characterized by a transfer of electrons from a high...
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3964060 |
A parallel or serial analog-to-digital converter utilizing both Gunn effect devices and field effect transistors. The converters are based on a differential pair of amplifiers consisting of two or more Gunn effect devices, one of which i...
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3846717 |
The high frequency oscillator includes a body of n-type gallium arsenide which exhibits a bulk negative resistance when the field applied to the body exceeds a threshold field. The input circuit for theoscillator forms, with the gallium ...
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3813585 |
A compound semiconductor device is provided with at least one inwardly splayed groove by a method of etching which takes into account the crystal orientation of the semiconductor material.
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3697831 |
A plurality of Gunn devices are electrically connected in series and therly connected in parallel and include a layer of active semiconductive material, a first plurality of electrical contacts disposed along one side of the active semic...
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3621411 |
Power amplification of a radiofrequency signal is achieved in a two-valley semiconductor material such a gallium arsenide (GaAs). To achieve amplification of the radiofrequency signal, a slow wave circuit, such as a meandering line is re...
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3599000 |
A semiconductor device for use as a logic element wherein a Gunn effect element is placed in optical coupling relationship with a plurality of semiconductive light emissive elements on a common semiconductor substrate. The Gunn effect el...
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3585609 |
A signal voltage source exhibiting a digital waveform is connected in series with a DC bias voltage source and the combination is placed across the anode and cathode of a bulk semiconductor which exhibits the phenomenon of domain propaga...
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3584928 |
Light emitting p -n junctions are formed by depositing p -type Cu 2 S along a sample of n -type CdS, the latter having an anode and a cathode and a third terminal adjacent to the cathode. A DC bias voltage is connected in series with a ...
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3581233 |
A solid-state oscillator element formed of a thin film of a polycrystalline semiconductor of which the minimum value of the conduction band represents a different energy level depending upon the direction in the wave vector space (usuall...
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3571759 |
In a properly cut sample of selectively doped semiconductor material, such as germanium, with a selected bias voltage applied along the longitudinal axis, a small transverse voltage applied across one end of the sample produces a transve...
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3534267 |
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3526844 |
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3518749 |
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3453502 |
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3443169 |
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3434008 |
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3745071 |
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