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7420628 |
An electro-optical device comprising a display drive system with the display timing related to the unit time t for writing-in a picture element and to the time F for writing-in one picture is disclosed. In the device, a gradated display ...
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7372073 |
A semiconductor device includes a substrate having an insulating film on its surface, and ac active layer made of a semiconductive thin film on the substrate surface. The thin film contains a mono-domain region formed of multiple columna...
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7348598 |
A TFT, in which source and drain electrodes having concentric circular shapes are formed, reduces an OFF current caused by a leakage current and optimizes an ON current and a stray capacitance between gate and source electrodes. The TFT ...
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7335916 |
A semiconductor light emitting device comprising: a transparent substrate; an electron injection layer of N-type GaN-based semiconductor; an active layer on the electron injection layer; a hole injection layer of P-type GaN-based semicon...
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7317245 |
Disclosed is a method for manufacturing a semiconductor device substrate. A substrate having no bus line and lead-in line is efficiently manufactured. In a step needing an electroplating process, conductive film is temporarily attached t...
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7317207 |
To provide TFT of improved low-temperature polycrystalline layer that has higher electron mobility and assures less fluctuation in manufacture in view of realizing a liquid-crystal display device having a large display area by utilizing ...
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7297978 |
After an amorphous semiconductor thin film is crystallized by utilizing a catalyst element, the catalyst element is removed by performing a heat treatment in an atmosphere containing a halogen element. A resulting crystalline semiconduct...
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7288787 |
The present invention provides a thin-film transistor offering a higher electron (or hole) mobility, a method for manufacturing the thin-film transistor, and a display using the thin-film transistor. The present invention provides a thin...
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7268384 |
The invention includes methods of forming memory circuitry. In one implementation, a semiconductor substrate includes a pair of word lines having a bit node received therebetween. A bit node contact opening is formed within insulative ma...
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7238963 |
A self-aligned LDD TFT and a fabrication method thereof. A substrate is provided, on which a semiconductor layer is formed. A first masking layer is provided over a first region of the portion of the semiconductor layer. The first maskin...
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7232716 |
The average film thickness of an amorphous silicon film formed on a substrate is measured. Then, the amorphous silicon film is irradiated with a laser beam to form a polysilicon film, and the grain size distribution of the polysilicon fi...
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7208763 |
In a conventional analog buffer circuit composed of polycrystalline semiconductor TFTs, a variation in the output is large. Thus, a measure such as to provide a correction circuit has been taken. However, there has been such a problem th...
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7202499 |
An object of the present invention is to provide a TFT of new structure in which the gate electrode overlaps with the LDD region and a TFT of such structure in which the gate electrode does not overlap with the LDD region. The TFT is mad...
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7183571 |
A polycrystalline silicon thin film to be used in display devices, the thin film having adjacent primary grain boundaries that are not parallel to each other, wherein an area surrounded by the primary grain boundaries is larger than 1 μ...
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7176479 |
A nitride compound semiconductor element having improved characteristics, productivity and yield. A nitride compound semiconductor element includes: a sapphire substrate; a first single crystalline layer of AlN formed on said sapphire su...
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7166861 |
The present invention provides a thin-film transistor that is formed by using a patterning method capable of forming a semiconductor channel layer in sub-micron order and a method for manufacturing thereof that provides a thin-film trans...
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7164152 |
A crystalline film includes a first crystalline region having a first film thickness and a first crystalline grain structure; and a second crystalline region having a second film thickness and a second crystalline grain structure. The fi...
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7148510 |
A semiconductor display device with an interlayer insulating film in which surface levelness is ensured with a limited film formation time, heat treatment for removing moisture does not take long, and moisture in the interlayer insulatin...
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7148507 |
A semiconductor device production system using a laser crystallization method is provided which can avoid forming grain boundaries in a channel formation region of a TFT, thereby preventing grain boundaries from lowering the mobility of ...
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7132686 |
In a semiconductor device including a laminate of a first insulating layer, a crystalline semiconductor layer, and a second insulating layer, characteristics of the device are improved by determining its structure in view of stress balan...
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7129522 |
Protrusions called ridges are formed on the surface of a crystalline semiconductor film formed by a laser crystallization method or the like. A heat absorbing layer are formed below a semiconductor film. When the semiconductor film is cr...
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7119365 |
A polycrystalline Si thin film and a single crystal Si thin film are formed on an SiO 2 film deposited on an insulating substrate. A polycrystalline Si layer is grown by thermally crystallizing an amorphous Si thin film so as to form th...
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7115903 |
An insulating film having depressions and projections are formed on a substrate. A semiconductor film is formed on the insulating film. Thus, for crystallization by using laser light, a part where stress concentrates is selectively forme...
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7115456 |
A sequential lateral solidification (SLS) device and a method of crystallizing silicon using the same is disclosed, wherein alignment keys are formed on a substrate with one mask having a plurality of different patterns, and a crystalliz...
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7091519 |
A semiconductor device includes a substrate having an insulating film on its surface, and ac active layer made of a semiconductive thin film on the substrate surface. The thin film contains a mono-domain region formed of multiple columna...
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7034336 |
The channel region ( 11 ) and the source-drain regions ( 9, 10 ) are arranged vertically at a sidewall of a dielectric trench filling ( 4 ). On the opposite side, the semiconductor material is bounded by the gate dielectric ( 18 ) and th...
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7023021 |
The present invention improves the aperture ratio of a pixel of a reflection-type display device or a reflection type display device without increasing the number of masks and without using a blackmask. A pixel electrode ( 167 ) is arran...
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6998641 |
In order to solve the problem of inferior gettering efficiency in the n-channel TFT, the present invention provides at an end of the source/drain regions of the n-channel TFT a highly efficient gettering region that contains both of an n...
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6998639 |
A process for fabricating a highly stable and reliable semiconductor, comprising: coating the surface of an amorphous silicon film with a solution containing a catalyst element capable of accelerating the crystallization of the amorphous...
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6952021 |
A bottom-gate thin-film transistor includes a gate electrode, a gate insulating film, an active layer, and a protective insulating film deposited in that order on a substrate. The protective insulating film has a thickness of 100 nm or l...
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6933530 |
A process for direct integration of a thin-film silicon p-n junction diode with a magnetic tunnel junction for use in advanced magnetic random access memory (MRAM) cells for high performance, non-volatile memory arrays. The process is ba...
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6933526 |
A CMOS thin film transistor having a semiconductor layer formed in a zigzag form on an insulating substrate, and a PMOS transistor region and an NMOS transistor region and a gate electrode having at least one slot crossing the semiconduc...
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6927418 |
A thin film transistor substrate includes a transparent insulating substrate, a first thin film transistor that is formed on the transparent insulating substrate, and a second thin film transistor that is formed on the transparent insula...
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6921918 |
An active matrix organic electroluminescent display device of the present invention is fabricated through a six-mask process unlike the related art that uses eight masks. In the present invention, since the ground line and the power line...
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6909115 |
There is disclosed a semiconductor device and a method of fabricating the semiconductor device in which a heat treatment time required for crystal growth is shortened and a process is simplified. Two catalytic element introduction region...
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6906346 |
This invention concerns with a semiconductor device which is characterized in that the device is provided with a thin film transistor 40 having a polycrystalline semiconductor layer 11 , the semiconductor layer 11 including a channe...
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6885028 |
A transistor array includes conductor lines, function lines, and transistors. Each of the conductor lines includes a core and a conductor layer that covers the core. Each of the function lines includes a core, at least the surface of whi...
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6878968 |
A metallic element is effectively removed from a semiconductor film crystallized by using the metallic element. The concentration distribution of phosphorous or antimony in the depth direction of at least one of a source and a drain of a...
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6872979 |
A semiconductor substrate that prevents formation of particles from an edge part of the substrate. The substrate contains an on-substrate oxide film and an SOI layer stacked on the oxide film. A molten layer is formed on the edge part of...
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6864520 |
A method (and structure) for an electronic chip having at least one layer of material for which a carrier mobility of a first carrier type is higher in a first crystal surface than in a second crystal surface and for which a carrier mobi...
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6841797 |
A semiconductor device production system using a laser crystallization method is provided which can avoid forming grain boundaries in a channel formation region of a TFT, thereby preventing grain boundaries from lowering the mobility of ...
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6833561 |
The present invention relates to a structure and a fabrication method of a storage capacitor used in the pixel region of a display panel such as LCD or OELD. The present invention simultaneously forms a poly-crystalline silicon TFT and a...
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6831299 |
In a conventional analog buffer circuit composed of polycrystalline semiconductor TFTs, a variation in the output is large. Thus, a measure such as to provide a correction circuit has been taken. However, there has been such a problem th...
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6825534 |
A semiconductor device includes a combination substrate having a bulk silicon region, and a silicon-on-insulator (SOI) region. The SOI region includes a crystallized silicon layer formed by annealing amorphous silicon and having isolatio...
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6822262 |
After an amorphous semiconductor thin film is crystallized by utilizing a catalyst element, the catalyst element is removed by performing a heat treatment in an atmosphere containing a halogen element. A resulting crystalline semiconduct...
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6815717 |
To a polycrystalline silicon layer crystallized by irradiation with laser light, a mixed gas comprised of ozone gas and H 2 O or N 2 O gas is fed at a processing temperature of 500° C. or below, or the polycrystalline silicon layer is p...
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6784456 |
A gate-overlap-drain structure is obtained by a single pair of a single impurity implantation process and a single laser anneal process, wherein the improved gate-overlap-drain structure includes lightly activated high impurity concentra...
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6777763 |
In a thin film transistor (TFT), a mask is formed on a gate electrode, and a porous anodic oxide is formed in both sides of the gate electrode using a relatively low voltage. A barrier anodic oxide is formed between the gate electrode an...
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6774399 |
An active-matrix substrate is provided, which suppresses the unevenness of its surface due to the height difference of the TFTs and gate and data lines from the remaining area. After TFTs, gate lines, and data lines are formed on a trans...
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6765272 |
A semiconductor device has a gate electrode which is formed on a first conductive-type well set in semiconductor substrate, with a gate insulating film lying therebetween; a LDD structure in which, on either side of said gate electrode, ...
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