| Document |
Document Title |
|
7411218 |
A Schottky barrier silicon carbide device has a Re Schottky metal contact. The Re contact 27 is thicker than 250 Angstroms and may be between 2000 and 4000 Angstroms. A termination structure is provided by ion milling an annular region...
|
|
7400030 |
In the present invention, there is provided semiconductor devices such as a Schottky UV photodetector fabricated on n-type ZnO and Mg x Zn 1-x O epitaxial films. The ZnO and Mg x Zn 1-x O films are grown on R-plane sapphire substrates an...
|
|
7391056 |
Electron-hole production at a Schottky barrier has recently been observed experimentally as a result of chemical processes. This conversion of chemical energy to electronic energy may serve as a basic link between chemistry and electroni...
|
|
7358533 |
The present invention provides an electronic device having more than two conductive layers that cross but not in contact with each other. At least one of the conductive layers comprises a width change part, a width of which changes in a ...
|
|
7348598 |
A TFT, in which source and drain electrodes having concentric circular shapes are formed, reduces an OFF current caused by a leakage current and optimizes an ON current and a stray capacitance between gate and source electrodes. The TFT ...
|
|
7288787 |
The present invention provides a thin-film transistor offering a higher electron (or hole) mobility, a method for manufacturing the thin-film transistor, and a display using the thin-film transistor. The present invention provides a thin...
|
|
7271403 |
A phase change memory may be made using an isolation diode in the form of a Schottky diode between a memory cell and a word line. The use of Schottky diode isolation devices may make the memory more scaleable in some embodiments.
|
|
7233033 |
A small semiconductor display device of low power consumption and with high definition/high resolution/high image quality is provided. The semiconductor display device according to the present invention includes a pixel matrix circuit, a...
|
|
7221007 |
The invention provides a sheet for optical-semiconductor element encapsulation, which has a multilayer structure including at least two resin layers. The at least two resin layers include: (A) an outermost resin layer (layer A) that is t...
|
|
7217953 |
A passive mechanism suppresses injection, into any active guard regions interposed between the edge of a photodiode array chip and the outer photodiode pixels or into the outer pixels themselves, of minority carrier current generated in ...
|
|
7199442 |
A SiC Schottky barrier diode (SBD) is provided having a substrate and two or more epitaxial layers, including at least a thin, lightly doped N-type top epitaxial layer, and an N-type epitaxial layer on which the topmost epitaxial layer i...
|
|
7189994 |
It is an object of the present invention to form a TFT which is required to have a high withstanding voltage characteristic as well as to lower an off-current, a TFT which is required to have a high withstanding voltage characteristic as...
|
|
7176494 |
Disclosed is a thin film transistor (TFT) for a liquid crystal display (LCD) and a method for manufacturing the same that allows the number of photomasks used in a photolithography process to be decreased as compared to conventional meth...
|
|
7176489 |
A thin-film transistor includes a substrate, and a gate including a double-layered structure having first and second metal layers provided on the substrate, the first metal layer being wider than the second metal layer by 1 to 4 μm. A m...
|
|
7166861 |
The present invention provides a thin-film transistor that is formed by using a patterning method capable of forming a semiconductor channel layer in sub-micron order and a method for manufacturing thereof that provides a thin-film trans...
|
|
7148510 |
A semiconductor display device with an interlayer insulating film in which surface levelness is ensured with a limited film formation time, heat treatment for removing moisture does not take long, and moisture in the interlayer insulatin...
|
|
7071488 |
The invention provides an active matrix display device in which active elements are formed on a first substrate, wiring lines are formed on a second substrate, an element chip having at least one active element is peeled off from the fir...
|
|
7067845 |
In manufacturing a semiconductor device, static electricity is generated while contact holes are formed in an interlayer insulating film by dry etching. Damage to a pixel region or a driving circuit region due to travel of the static ele...
|
|
6995411 |
An image sensor has a vertically integrated thin-film photodiode. In one implementation, the image sensor has a substrate, an interconnection structure adjacent to the substrate, wherein the interconnection structure includes a top metal...
|
|
6774451 |
This invention relates to a MOS transistor made in the thin film of silicon of an SOI chip ( 10 ), said thin film ( 13 ) being slightly doped and of less than 30 nm in thickness, the source ( 14 ) and drain ( 15 ) contacts being of the S...
|
|
6734460 |
An active matrix substrate includes a substrate composed of resin, and a polysilicon thin film diode formed on the substrate. The polysilicon thin film diode may be a lateral diode centrally having a region into which impurity is doped. ...
|
|
6580107 |
The conventional compound semiconductor switching device is prone to have a large chip size as the gate width needs to be large for achieving a low insertion loss and the separation between the connecting pad and the circuit wiring needs...
|
|
6521961 |
An enhancement mode semiconductor device has a barrier layer disposed between the gate electrode of the device and the semiconductor substrate underlying the gate electrode. The barrier layer increases the Schottky barrier height of the ...
|
|
6218702 |
A microcrystal silicon film is formed on a substrate by using a silicide gas, a hydrogen gas, and a source gas that enables introduction of a metal element for accelerating crystallization of silicon in a capacitance-coupling plasma CVD ...
|
|
6184960 |
A method for producing a substrate of a reflection type liquid crystal display device is provided. The method includes the steps of: forming the input portion for inputting a signal from outside and the connecting electrode on the substr...
|
|
5977603 |
In a IR detector and a fabrication method thereof, the IR detector has a insulating thin film (3) made up of insulating material, many semiconductor layers (1) each having an island shape formed on the insulating thin film (3), a forward...
|
|
5814832 |
An electron emitting semiconductor device is provided with a P-type semiconductor layer arranged on a semiconductor substrate having an impurity concentration. A Schottky barrier electrode is arranged on a surface of the P-type semicondu...
|
|
5583348 |
A method for making a schottky diode structure (10) simultaneously with a polysilicon contact structure (31,33) to a transistor is provided. In a single process step, a polysilicon layer is patterned to expose a single crystal semiconduc...
|
|
5493131 |
The rectifying element is comprised of two electrodes, an undoped diamond film, and a B-doped p-type diamond film. The diamond films are formed of highly-oriented diamond films, of which at least 80% of the surface area consists of (100)...
|
|
5444271 |
Base regions of a second conductivity type are formed and spaced apart from one another in a first major surface of a semiconductor substrate of a first conductivity type which functions as a drain region. Source regions of the first con...
|
|
5352908 |
A diamond Schottky diode including an electrically conductive substrate, a multi-layer structure of a semiconducting diamond layer and an insulating diamond layer, and a metal electrode. This diode has a greater potential barrier under a...
|
|
5336905 |
Semiconductor device and method of manufacturing same, display device and support plate for same provided with such a semiconductor device. A semiconductor device having an insulating substrate on which a Schottky diode is formed between...
|
|
5311039 |
An antifuse memory cell having a P + polysilicon doping in a region directly under an intrinsic silicon programming layer. The P + polysilicon region is surrounded by an N - polysilicon doped region, and the two regions are sandwiched...
|
|
5260594 |
A semiconductor device of the present invention capable of obtaining a proper output signal by absorbing an overshoot or an undershoot to reduce internal noises, comprises, a logical circuit portion including a transistor, a first diode ...
|
|
5206523 |
A process is disclosed for producing microporous crystalline silicon which has a band-gap substantially increased relative to that of normal crystalline silicon. This process involves the preparation of quantum wires of silicon by means ...
|
|
5173761 |
A method and apparatus for contructing diamond semiconductor structures made of polycrystalline diamond thin films is disclosed. The use of a polycrystalline diamond deposition on a substrate material provides an advantage that any subst...
|
|
5148256 |
In the disclosed computer, a plurality of register means for storing digital operands and control signals are in a semiconductor substrate; an arithmetic means for performing functional opertions on the operands are also in the substrate...
|
|
5101244 |
A semiconductor device has a first diode having a pn junction and a second diode having a combination of a Schottky barrier and a pn junction in a current-passing direction provided side by side in a direction perpendicular to the curren...
|
|
4965643 |
An improved Schottky diode may be placed above an insulating layer such as the field oxide instead of within an epitaxial layer. The forward voltage, dynamic resistance and breakdown voltage may all be tailored.
|
|
4952984 |
In a display device including active switching units, lateral Schottky diodes are used as switching elements. In the lateral Schottky diodes a sub-micron distance between the Schottky electrode and the opposing electrode contacting the s...
|
|
4933735 |
Disclosed is a digital computer having memory means stacked on an insulating layer over a semiconductor substrate. In one embodiment, the memory means includes an array of diodes which overflies the substrate and generates control signal...
|
|
4905078 |
A semiconductor device includes a semiconductor layer provided above a pair of bipolar transistors formed in a surface region of a semiconductor body. Schottky barrier diodes and resistors are formed in the semiconductor layer. The pair ...
|
|
4857973 |
The invention comprises a Schottky barrier type infrared photodetector which is monolithically integrated on a silicon waveguide. A Schottky barrier contact is positioned directly on a silicon waveguide to absorb grazing incidence optica...
|
|
4826777 |
An array for sensing the relative intensity of electromagnetic radiation at a plurality of locations employs a network of photodiodes and non-photoresponsive diodes. A first terminal of each photodiode, e.g. the anode, is electrically co...
|
|
4796074 |
The word line pitch within a read-only memory is decreased, thereby increasing the cell density within the memory, without imposing any additional or stricter spacing rules or fabrication techniques utilized in the manufacture of the rea...
|
|
4771326 |
A heterojunction transistor has an acceptor doped superlattice base of sub-micron thickness, a composite emitter with a donor concentration adjacent the base, with a wider bandgap energy than the base, and with a low recombination veloci...
|
|
4682206 |
A novel thin ribbon of semiconductor has a polycrystalline structure composed more than 50% of grains having a grain size of more than 5 μm, a thickness of 5 to 200 μm, a sufficient flexibility to be windable on a pipe having a diamete...
|
|
4680601 |
A Schottky power diode includes a semiconductor substrate having a given band gap, a semi-insulating intermediate layer disposed on the substrate, an insulating layer disposed on the intermediate layer and a Schottky contact disposed on ...
|
|
4675715 |
A resistive load element comprises a Schottky barrier metal layer formed on the top surface of a doped p-type polycrystalline silicon (polysilicon) plug contacting a surface n + zone located in a semiconductor body at a major horizonta...
|
|
4628339 |
A process and structure are disclosed which are suitable for forming large arrays of Schottky diodes at desired locations between mutually perpendicular strips of aluminum and strips of metal-silicide. The invention is particularly usefu...
|
