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7453090 |
A method of manufacturing a semiconductor device includes forming isolation regions, a gate insulator film and gate electrodes, implanting in the silicon substrate with impurity ions, annealing to recover crystallinity of the implanted s...
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7427775 |
The mobility of carriers may be increased in strained channel epitaxial source/drain transistors. Doped silicon material may be blanket deposited after removing ion implanted source/drain regions. The blanket deposition forms amorphous f...
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7396712 |
A thin film processing method for processing the thin film by irradiating an optical beam to the thin film. A unit of the irradiation of the optical beam includes a first and a second optical pulse irradiation to the thin film, and the u...
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7354477 |
A low dislocation density GaN single crystal substrate is made by forming a seed mask having parallel stripes regularly and periodically aligning on an undersubstrate, growing a GaN crystal on a facet-growth condition, forming repetition...
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7335910 |
An object of the present invention is to provide a thin film transistor having a high mobility and having fewer fluctuations in the mobility or threshold voltage characteristics. A non-single-crystal semiconductor thin film having a thic...
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7303630 |
Dotted seeds are implanted in a regular pattern upon an undersubstrate. A GaN crystal is grown on the seed implanted undersubstrate by a facet growth method. The facet growth makes facet pits above the seeds. The facets assemble dislocat...
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7297983 |
Integrated circuit device comprising a conductive layer and a poly-crystalline silicon layer, wherein the integrated circuit device further comprises an intermediate counter-stress layer. This intermediate counter-stress layer is arrange...
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7279404 |
A process for fabricating a strained layer of silicon or of a silicon/germanium alloy, includes: a) the formation of a layer ( 2 ) of silicon or of a silicon/germanium alloy on a layer ( 1 ) of a material having a modifiable lattice par...
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7268367 |
Methods of forming thin film devices with different electrical characteristics on a substrate comprising a driver circuit region and a pixel region. A first and a second polysilicon pattern layers are formed on the driving circuit region...
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7268026 |
A method of forming a crystal grain for use in a semiconductor manufacturing process, the method including the steps of forming an oxide silicon film on a glass substrate, etching at least one hole at a predetermined location in the oxid...
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7256109 |
A high-quality isotropic polycrystalline silicon (poly-Si) and a method for fabricating high quality isotropic poly-Si film are provided. The method includes forming a film of amorphous silicon (a-Si) and using a MISPC process to form po...
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7247882 |
There is provided a semiconductor device having TFTs whose thresholds can be controlled. There is provided a semiconductor device including a plurality of TFTs having a back gate electrode, a first gate insulation film, a semiconductor ...
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7223665 |
A method for manufacturing a dielectric thin film capacitor of the present invention includes the steps of coating a liquid raw material on a substrate and performing a first heat treatment to form an adhesive layer, forming a lower elec...
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7202499 |
An object of the present invention is to provide a TFT of new structure in which the gate electrode overlaps with the LDD region and a TFT of such structure in which the gate electrode does not overlap with the LDD region. The TFT is mad...
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7193240 |
A mask and its application in sequential lateral solidification (SLS) crystallization of amorphous silicon are provided. The mask includes a light absorptive portion for blocking a laser beam and a plurality of stripe-shaped light transm...
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7183571 |
A polycrystalline silicon thin film to be used in display devices, the thin film having adjacent primary grain boundaries that are not parallel to each other, wherein an area surrounded by the primary grain boundaries is larger than 1 μ...
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7176479 |
A nitride compound semiconductor element having improved characteristics, productivity and yield. A nitride compound semiconductor element includes: a sapphire substrate; a first single crystalline layer of AlN formed on said sapphire su...
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7157737 |
Single-crystal devices and a method for forming semiconductor film single-crystal domains are provided. The method comprises: forming a substrate, such as glass or Si; forming an insulator film overlying the substrate; forming a single-c...
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7148510 |
A semiconductor display device with an interlayer insulating film in which surface levelness is ensured with a limited film formation time, heat treatment for removing moisture does not take long, and moisture in the interlayer insulatin...
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7148507 |
A semiconductor device production system using a laser crystallization method is provided which can avoid forming grain boundaries in a channel formation region of a TFT, thereby preventing grain boundaries from lowering the mobility of ...
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7115905 |
A semiconductor device has a SALICIDE structure with low leakage currents, while maintaining shallow source and drain regions. A method of manufacturing the semiconductor device includes forming source and drain regions in a first semico...
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7115903 |
An insulating film having depressions and projections are formed on a substrate. A semiconductor film is formed on the insulating film. Thus, for crystallization by using laser light, a part where stress concentrates is selectively forme...
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7112826 |
Seeds are implanted in a regular pattern upon an undersubstrate. A GaN crystal is grown on the seed implanted undersubstrate by a facet growth method. The facet growth makes facet pits above the seeds. The facets assemble dislocations to...
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7105865 |
Seeds are implanted in a regular pattern upon an undersubstrate. An Al x In y Ga 1-x-y N (0≦x≦1, 0≦y≦1, 0<x+y≦1) mixture crystal is grown on the seed implanted undersubstrate by a facet growth method. The facet growth makes ...
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7102170 |
The irregularities of characteristics of a pair of transistors, which are prepared by a pseudo single crystallizing technique, are reduced. To achieve this, semiconductor layers are formed on a substrate and have pseudo single crystal re...
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7094610 |
A magnetic sensor using efficient injection of spin polarized electrons at room temperature can be fabricated by forming a semiconductor layer sandwiched between ferromagnets and forming δ-doped layers between the semiconductor layer an...
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7087971 |
A magnetic sensor based on efficient spin injection of spin-polarized electrons from ferromagnets into semiconductors and rotation of electron spin under a magnetic field. Previous spin injection structures suffered from very low efficie...
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7084468 |
Disclosed are a spin injection device applicable as a memory and a logical device using a spin valve effect obtained by injecting a carrier spin-polarized from a ferromagnet into a semiconductor at an ordinary temperature, and a spin-pol...
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7084081 |
A display device includes a display area composed of pixels in a matrix. Each pixel has a light-emitting element and a driving element to supply a driving current to the light-emitting element. The driving element includes a thin film tr...
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7075002 |
A method of manufacturing a thin-film solar cell, comprising the steps of: forming an amorphous silicon film on a substrate; placing a metal element that accelerates the crystallization of silicon in contact with the surface of the amorp...
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7071489 |
A polycrystalline silicon plate has grain boundary lines on a surface thereof, and at least one of the grain boundary lines is a quasi-linear grain boundary line. The silicon plate is used to produce a solar cell. The silicon plate is fo...
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7063986 |
A 3 group–5 group compound ferromagnetic semiconductor, comprising one material ‘A’ selected from the group of Ga, Al and In and one material ‘B’ selected from the group consisting of N and P, wherein one material ‘C’ selec...
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7045819 |
A silicon film is crystallized in a predetermined direction by selectively adding a metal element having a catalytic action for crystallizing an amorphous silicon and annealing. In manufacturing TFT using the crystallized silicon film, T...
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7045818 |
In a fabrication process of a semiconductor device for use in a TFT liquid crystal display system, before the start of crystallizing amorphous silicon (a-Si), dehydrogenation annealing is carried out to not only decrease the density of h...
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7005672 |
A thin film transistor including: an insulating layer; a gate electrode; a semiconductor layer including coalesced structurally ordered polymer aggregates of a self-organizable polymer, wherein the self-organizable polymer is of a type c...
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6962884 |
A method for processing integrated circuit devices. The method includes providing a monitor wafer, which comprising a silicon material. The method introduces a plurality of particles within a depth of the silicon material. The plurality ...
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6952021 |
A bottom-gate thin-film transistor includes a gate electrode, a gate insulating film, an active layer, and a protective insulating film deposited in that order on a substrate. The protective insulating film has a thickness of 100 nm or l...
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6933530 |
A process for direct integration of a thin-film silicon p-n junction diode with a magnetic tunnel junction for use in advanced magnetic random access memory (MRAM) cells for high performance, non-volatile memory arrays. The process is ba...
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6909113 |
A method of forming a periodic index of refraction pattern in a superlattice of a solid material to achieve photonic bandgap effects at desired optical wavelengths is disclosed. A plurality of space group symmetries, including a pluralit...
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6906346 |
This invention concerns with a semiconductor device which is characterized in that the device is provided with a thin film transistor 40 having a polycrystalline semiconductor layer 11 , the semiconductor layer 11 including a channe...
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6888162 |
An electronic apparatus employs a polycrystalline semiconductor thin film structure formed of an insulating substrate and a plurality of polycrystalline layers laminated on the insulating substrate. A plurality of transistors are formed ...
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6878968 |
A metallic element is effectively removed from a semiconductor film crystallized by using the metallic element. The concentration distribution of phosphorous or antimony in the depth direction of at least one of a source and a drain of a...
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6841797 |
A semiconductor device production system using a laser crystallization method is provided which can avoid forming grain boundaries in a channel formation region of a TFT, thereby preventing grain boundaries from lowering the mobility of ...
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6833561 |
The present invention relates to a structure and a fabrication method of a storage capacitor used in the pixel region of a display panel such as LCD or OELD. The present invention simultaneously forms a poly-crystalline silicon TFT and a...
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6825493 |
Sequential lateral solidification (SLS) crystallization of amorphous silicon using a mask having striped light transmitting portions. An amorphous silicon bearing substrate is located in an SLS apparatus. The amorphous silicon film is fu...
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6815717 |
To a polycrystalline silicon layer crystallized by irradiation with laser light, a mixed gas comprised of ozone gas and H 2 O or N 2 O gas is fed at a processing temperature of 500° C. or below, or the polycrystalline silicon layer is p...
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6815269 |
A thin-film transistor is formed by a polycrystalline silicon film having a thin-film part and a thick-film part, the thin-film part minimally being used as a channel part. The polycrystalline silicon film is formed by laser annealing wi...
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6812494 |
A semiconductor device with which a panel having a large area or a narrowly margined with the circumferential space minimized can be manufactured stably with a high yield. The semiconductor device comprises a TFT substrate having a plura...
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6812493 |
The present invention provides a thin film semiconductor element which is small in area with high on-current enough to be suitable for the power saving, miniaturization, and high definition display of a device. According to the present i...
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6809388 |
A magnetic sensor based on efficient spin injection of spin-polarized electrons from ferromagnets into semiconductors and rotation of electron spin under a magnetic field. Previous spin injection structures suffered from very low efficie...
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