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7473930 |
Method and system for providing a dynamically reconfigurable display having nanometer-scale resolution, using a patterned array of multi-wall carbon nanotube (MWCNT) clusters. A diode, phosphor or other light source on each MWCNT cluster...
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7473929 |
Ion implantation is carried out to form a p-well region and a source region in parts of a high resistance SiC layer on a SiC substrate, and a carbon film is deposited over the substrate. With the carbon film deposited over the substrate,...
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7470967 |
A self-aligned silicon carbide power MESFET with improved current stability and a method of making the device are described. The device, which includes raised source and drain regions separated by a gate recess, has improved current stab...
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7470930 |
A silicon carbide semiconductor device includes a semiconductor element disposed in a semiconductor substrate having a first conductive type silicon carbide layer and a silicon substrate. The device includes: a trench on the silicon carb...
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7466019 |
The semi-conducting support comprises a graphite substrate having a front surface and a rear surface and at least a first stack arranged on the front surface of the substrate. The first stack successively comprises a single-crystal diamo...
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7462886 |
The temperature of a bipolar semiconductor element using a wide-gap semiconductor is raised using heating means, such as a heater, to obtain a power semiconductor device being large in controllable current and low in loss. The temperatur...
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7459763 |
A reprogrammable metal-to-metal antifuse is disposed between two metal interconnect layers in an integrated circuit. A lower barrier layer is formed from Ti. A lower adhesion-promoting layer is disposed over the lower Ti barrier layer. A...
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7439563 |
A high-breakdown-voltage semiconductor device comprises a high-resistance semiconductor layer, trenches formed on the surface thereof in a longitudinal plane shape and in parallel, first regions formed on the semiconductor layer to be sa...
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7435993 |
An electronic package designed to package silicon carbide discrete components for silicon carbide chips. The electronic package allows thousands of power cycles and/or temperature cycles between −55° C. to 300° C. The present inventi...
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7432534 |
The present invention relates to a III-nitride semiconductor light emitting device comprising a plurality of III-nitride semiconductor layers including an active layer emitting light by recombination of electrons and holes, the plurality...
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7432532 |
Processes are described whereby a wafer is manufactured, a die from the wafer, and an electronic assembly including the die. The die has a diamond layer which primarily serves to spread heat from hot spots of an integrated circuit in the...
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7432148 |
Methods of forming an improved shallow trench isolation (STI) region are disclosed. Several exemplary techniques are proposed for treating STI sidewalls to improve the silicon (Si) surface at the atomic level. Each of the exemplary metho...
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7417255 |
A method of forming a high thermal conductivity diamond film and its associated structures comprising selectively nucleating a region of a substrate, and forming a diamond film on the substrate such that the diamond film has large grains...
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7414268 |
Silicon carbide high voltage semiconductor devices and methods of fabricating such devices are provided. The devices include a voltage blocking substrate. Insulated gate bipolar transistors are provided that have a voltage blocking subst...
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7411219 |
A semiconductor device can comprise a contact material in substantially continuous contact with a contact region. In an embodiment the contact region may comprise an alloy comprising a wide band-gap material and a low melting point conta...
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7411218 |
A Schottky barrier silicon carbide device has a Re Schottky metal contact. The Re contact 27 is thicker than 250 Angstroms and may be between 2000 and 4000 Angstroms. A termination structure is provided by ion milling an annular region...
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7410923 |
A highly corrosion-resistant SiC material is formed on a base body by a CVD process. The SiC material contains β-SiC crystals so oriented that the ratio of the sum of peak intensities of x-ray diffraction for (220) and (311) planes of t...
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7407837 |
Stress is exerted to the SiC crystal in the region, in which the carriers of a SiC semiconductor device flow, to change the crystal lattice intervals of the SiC crystal. Since the degeneration of the conduction bands in the bottoms there...
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7405430 |
A semiconductor structure is disclosed that includes a silicon carbide wafer having a diameter of at least 100 mm with a Group III nitride heterostructure on the wafer that exhibits high uniformity in a number of characteristics. These i...
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7405422 |
A method and apparatus for depositing single crystal, epitaxial films of silicon carbon and silicon germanium carbon on a plurality of substrates in a hot wall, isothermal UHV-CVD system is described. In particular, a multiple wafer low ...
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7399692 |
A process for fabricating a III-nitride power semiconductor device which includes forming a gate structure while providing a protective body over areas that are to receive power electrodes.
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7394103 |
A substantially all diamond transistor with an electrically insulating substrate, an electrically conductive diamond layer on the substrate, and a source and a drain contact on the electrically conductive diamond layer. An electrically i...
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7391058 |
A composite structure having a silicon carbide epitaxial layer is provided. The epitaxial layer includes at least four regions arranged vertically and defining respective interfaces, where each of the regions is characterized by a respec...
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7391057 |
High voltage silicon carbide (SiC) devices, for example, thyristors, are provided. A first SiC layer having a first conductivity type is provided on a first surface of a voltage blocking SiC substrate having a second conductivity type. A...
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7381993 |
In a semiconductor device of the present invention, the top surface of an n-type silicon carbide layer formed on a silicon carbide substrate is miscut from the (0001) plane in the <11-20> direction. A gate electrode, a source elect...
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7381992 |
Silicon carbide semiconductor devices and methods of fabricating silicon carbide semiconductor devices are provided by successively etching a mask layer to provide windows for formation of a source region of a first conductivity type, a ...
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7378325 |
A high voltage semiconductor device having a high current gain hFE is formed with a collector region ( 20 ) of a first conduction type, an emitter region ( 40 ) of the first conduction type, and a base region ( 30 ) of a second conductio...
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7375377 |
A light-emitting diode chip ( 1 ), in which over a substrate ( 2 ), a series of epitaxial layers ( 3 ) with a radiation-emitting active structure ( 4 ) based on InGaN is disposed. Between the substrate ( 2 ) and the active structure ( 4 ...
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7374609 |
The present invention relates to pigments whose particles have a length of from 2 μm to 5 mm, a width of from 2 μm to 2 mm and a thickness of from 50 nm to 1.5 μm and a ratio of length to thickness of at least 2:1, the particles havin...
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7372087 |
A structure for use in a static induction transistor includes a semiconductor body having first and second semiconductor layers on a substrate, with the second layer having a dopant concentration of around an order of magnitude higher th...
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7368763 |
A high quality silicon carbide (SiC) layer being substantially lower in threading dislocation density than a prior layer is formed on silicon (Si) substrate. A semiconductor device is fabricated in such a way that a semiconductor buffer ...
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7365363 |
A silicon carbide semiconductor device includes: a semiconductor substrate having a principal surface and a backside surface; a drift layer disposed on the principal surface; a base region disposed on the drift layer; a source region dis...
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7355207 |
A manufacturing method of a silicon carbide semiconductor device includes the steps of: preparing a semiconductor substrate including a silicon carbide substrate, a drift layer and a first semiconductor layer; forming a plurality of firs...
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RE40163 |
In a semiconductor light-emitting element, an underlayer is composed of a high crystallinity AlN layer having a FWHM in X-ray rocking curve of 90 seconds or below, and a first cladding layer is composed of an n-AlGaN layer. A light-emitt...
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7345310 |
A bipolar junction transistor (BJT) includes a silicon carbide (SiC) collector layer of first conductivity type, an epitaxial silicon carbide base layer of second conductivity type on the silicon carbide collector layer, and an epitaxial...
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7345309 |
A silicon carbide metal semiconductor field-effect transistor includes a bi-layer silicon carbide buffer for improving electron confinement in the channel region and/or a layer disposed over at least the channel region of the transistor ...
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7339776 |
A voltage excursion control system for limiting transient voltage peaks in electrical circuits otherwise occurring across selected components therein in response to changing conditions in such circuits has a plurality of silicon carbide ...
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7335929 |
A transistor structure comprises a channel region overlying a substrate region. The substrate region comprises a first semiconductor material with a first lattice constant. The channel region comprises a second semiconductor material wit...
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7326962 |
The present invention provides a unit cell of a metal-semiconductor field-effect transistor (MESFET). The unit cell of the MESFET includes a source, a drain and a gate. The gate is disposed between the source and the drain and on an n-ty...
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7312491 |
A semiconductor memory element, which can be controlled via field effect, includes a semiconductor substrate of a first conduction type, a first doping region of a second conduction type provided in the semiconductor substrate, a second ...
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7307313 |
A semiconductor device includes (a) a vertical field effect transistor, the vertical field effect transistor including a drain electrode formed on a first surface of a first conductivity type of a semiconductor, a pair of first trenches ...
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7301173 |
The present invention provides a group III-nitride light emitting device improved in operating voltage and electrostatic discharge characteristics. The group III-nitride light emitting device comprises a lower n-type clad layer, a curren...
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7297626 |
A Ni 2 Si-nSiC Ohmic contact is formed by pulsed laser ablation deposition (PLD) of Ni 2 Si source target deposited on a n-SiC substrate or SiC substrate wafer with SiC epilayer. The Ni 2 Si Ohmic contact on n-SiC was rapid thermal annea...
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7294860 |
A switching element combining a self-aligned, vertical junction field effect transistor with etched-implanted gate and an integrated antiparallel Schottky barrier diode is described. The anode of the diode is connected to the source of t...
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7294859 |
A method is disclosed for treating a silicon carbide substrate for improved epitaxial deposition thereon and for use as a precursor in the manufacture of devices such as light emitting diodes. The method includes the steps of implanting ...
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7294858 |
A semiconductor device provided with a silicon carbide semiconductor substrate, and an ohmic metal layer joined to one surface of the silicon carbide semiconductor substrate in an ohmic contact and composed of a metal material whose sili...
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7282739 |
A silicon carbide semiconductor device is provided with a semiconductor substrate ( 20 ) of silicon carbide of a first conductivity type, a hetero semiconductor region ( 60 ) forming a hetero-junction with the semiconductor substrate ( 2...
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7274040 |
A light emitting device includes a substrate, a doped substrate layer, a layer of first conductivity type overlying the doped substrate layer, a light emitting layer overlying the layer of first conductivity type, and a layer of second c...
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7274025 |
The invention relates to a detector, and to a method for the production thereof, for detecting a high-energy and high-intensity particle beam ( 2 ), which comprises a crystalline semi-conductor plate ( 3 ) having a metal coating ( 4 ) an...
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7271416 |
Semiconductor structure and method of fabricating a semiconductor structure are provided that include a substrate having a first in-plane unstrained lattice constant, a first layer comprising a first semiconductor material on the substra...
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