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7442254 |
A method of growing a nitride semiconductor crystal which has very few crystal defects and can be used as a substrate is disclosed. This invention includes the step of forming a first selective growth mask on a support member including a...
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7420235 |
In the solid-state imaging device of the present invention having a photoelectric conversion section and a charge transfer section equipped with a charge transfer electrode for transferring an electric charge generated in the photoelectr...
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7417255 |
A method of forming a high thermal conductivity diamond film and its associated structures comprising selectively nucleating a region of a substrate, and forming a diamond film on the substrate such that the diamond film has large grains...
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7404913 |
Fast, bright inorganic scintillators at room temperature are based on radiative electron-hole recombination in direct-gap semiconductors, e.g. CdS and ZnO. The direct-gap semiconductor is codoped with two different impurity atoms to conv...
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7399692 |
A process for fabricating a III-nitride power semiconductor device which includes forming a gate structure while providing a protective body over areas that are to receive power electrodes.
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7368794 |
Boron carbide heteroisomer semiconductor devices are used as particle detectors. The boron carbide semiconductor devices produce electric current in response to incident particles, such as alpha particles, neutrons, or photons.
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7348200 |
The invention provides a method of growing a non-polar a-plane gallium nitride. In the method, first, an r-plane substrate is prepared. Then, a low-temperature nitride-based nucleation layer is deposited on the substrate. Finally, the no...
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7291865 |
A flip-chip type of Group III nitride based compound semiconductor light-emitting device comprises a transparent conductive film 10 made of ITO on a p-type contact layer. On the transparent conductive film, an insulation protection fil...
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7259398 |
A semiconductor light emitting apparatus is proposed, which has thyristor without increasing number of constituent semiconductor layers, with large degree of freedom of selection of ON voltage. It comprises first-conductivity-type first ...
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7253446 |
A light-emitting device and illumination apparatus using the same are provided. The light-emitting device includes a semiconductor light-emitting element that emits blue-violet or blue light and a fluorescent material that absorbs the li...
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7202503 |
An assembly comprising a semiconductor substrate having a first lattice constant, an intermediate layer having a second lattice constant formed on the semiconductor substrate, and a virtual substrate layer having a third lattice constant...
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7176497 |
An Al 0.15 Ga 0.85 N layer 2 is formed on a silicon substrate 1 in a striped or grid pattern. A GaN layer 3 is formed in regions A where the substrate 1 is exposed and in regions B which are defined above the layer 2 . At this t...
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7173286 |
Semiconductor devices formed by depositing III-nitride compounds on lithium niobate and/or lithium tantalate substrates are disclosed. Also disclosed, are semiconductor devices formed by depositing lithium niobate and/or lithium tantalat...
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7154128 |
A method of growing a nitride semiconductor crystal which has very few crystal defects and can be used as a substrate is disclosed. This invention includes the step of forming a first selective growth mask on a support member including a...
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7105875 |
A lateral power diodes with an optimal drift doping formed in widebandgap semiconductors like Silicon Carbide, Aluminum Nitride and Gallium Nitride and Diamond are provided with a voltage rating greater 200V. Contrary to conventional ver...
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7102171 |
A magnetic semiconductor material having magnetization characteristics and a method for preparing the same is provided. In the method for preparing the magnetic semiconductor, Mn is vapor-deposited at a thickness of 200 to 300 Å onto ...
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7084422 |
The principal surface of a substrate made of a group III-V compound semiconductor material is about a (100) plane. A light emitting lamination structure is disposed on the principal surface. In the light emitting lamination structure, a ...
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7071047 |
Semiconductor structures and method of forming semiconductor structures. The semiconductor structures including nano-structures or fabricated using nano-structures. The method of forming semiconductor structures including generating nano...
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7064354 |
A color mixing light emitting diode (LED) is disclosed. The present invention is featured in that a plurality of LEDs emitting different colors of light can be electrically connected in series and/or in parallel by using chip manufacturi...
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7042011 |
A compound semiconductor laser of a III group nitride semiconductor of the present invention includes a first cladding layer 104 of a first conduction type formed on a substrate 101 , an active layer 106 formed on the first cladding...
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7030417 |
The present invention relates to a semiconductor light emitting device comprising a sapphire substrate 11 ; a u-GaN layer 12 that is formed on top of the substrate 11 and that comprises a plurality of concave portions 121 formed i...
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7026652 |
A power LED high in light extraction efficiency is obtained without increasing the operation voltage and degrading the reliability. The power LED comprises: epitaxial growth layers including a first conductive type clad layer, an active ...
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7026179 |
When GaN or other nitride III-V compound semiconductor layers are grown on a substrate such as a sapphire substrate, thickness x of the substrate relative to thickness y of the nitride III-V compound semiconductor layers is controlled to...
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7009209 |
A silicon carbide semi-insulating epitaxy layer is used to create power devices and integrated circuits having significant performance advantages over conventional devices. A silicon carbide semi-insulating layer is formed on a substrate...
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6998697 |
A chalcogenide comprising material is formed to a first thickness over the first conductive electrode material. The chalcogenide material comprises A x B y . A metal comprising layer is formed to a second thickness over the chalcogenide ...
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6992317 |
This invention discloses novel device structures for full color flat panel displays utilizing pseudomorphically cladded quantum dot nanocrystals. Different colors are obtained by changing the core size and composition of the quantum dots...
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6982494 |
A semiconductor device includes a semiconductor chip, electrodes pads, an insulating layer, first and second conductive patterns and external terminals. The electrode pads are formed on a first area of a main surface of the semiconductor...
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6930329 |
An Al 0.15 Ga 0.85 N layer 2 is formed on a silicon substrate 1 in a striped or grid pattern. A GaN layer 3 is formed in regions A where the substrate 1 is exposed and in regions B which are defined above the layer 2. At this t...
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6906351 |
A layered article and method for forming the same includes a single crystal silicon substrate, a silicon oxynitride layer (SixNyOz) disposed on the silicon substrate, and a single crystal GaN layer disposed on the oxynitride layer. The s...
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6893950 |
A process for the production of contacts for electrically operated II/VI semiconductor structures (for example laser diodes). The contact materials palladium and gold hitherto used in relation to electrically operated II/VI semiconductor...
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6855992 |
A semiconductor structure includes a monocrystalline silicon substrate, an amorphous oxide material overlying the monocrystalline silicon substrate, a monocrystalline perovskite oxide material overlying the amorphous oxide material, and ...
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6835966 |
An Al 0.15 Ga 0.85 N layer 2 is formed on a silicon substrate 1 in a striped or grid pattern. A GaN layer 3 is formed in regions A where the substrate 1 is exposed and in regions B which are defined above the layer 2. At this t...
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6818926 |
An Al 0.15 Ga 0.85 N layer 2 is formed on a silicon substrate 1 in a striped or grid pattern. A GaN layer 3 is formed in regions A where the substrate 1 is exposed and in regions B which are defined above the layer 2 . At this t...
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6791257 |
An electro luminescence device comprises a compound semiconductor crystal substrate comprising a Group 12 (2B) element and a Group 16 (6B) element in a periodic table. It is produced by providing a substrate having a low dislocation dens...
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6664570 |
A p-type contact electrode device in a ZnSe-based II-VI compound semiconductor, which electrode device uses, as a contact layer, a BeTe layer having a high p-type doping and a low lattice mismatching with a GaAs substrate to prevent oxid...
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6657290 |
A semiconductor device includes a first semiconductor chip and a second semiconductor chip which are laminated on a substrate, wherein electrode terminals which are provided on each of the semiconductor chips are electrically connected t...
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6639247 |
A semi-insulating bulk single crystal of silicon carbide is disclosed that has a resistivity of at least 5000 Ω-cm at room temperature and a concentration of deep level trapping elements that is below the amounts that will affect the re...
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6590236 |
High quality epitaxial layers of compound semiconductor materials can be grown overlying large silicon wafers by first growing an accommodating buffer layer on a silicon wafer. The accommodating buffer layer is a layer of monocrystalline...
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6580098 |
An Al 0.15 Ga 0.85 N layer 2 is formed on a silicon substrate 1 in a striped or grid pattern. A GaN layer 3 is formed in regions A where the substrate 1 is exposed and in regions B which are defined above the layer 2 . At this tim...
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6555847 |
A nitride based semiconductor light emitting element includes at least a gallium nitride based compound semiconductor layer of a first conductivity type and a gallium nitride based compound semiconductor layer of a second conductivity ty...
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6469319 |
An ohmic contact to II-VI compound semiconductor device for lowering the contact resistance and increasing the efficiency and reliability of a photoelectric device. The method of manufacturing the ohmic contact to a II-VI compound semico...
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6456639 |
The invention provides a semiconductor light emitting device whose operating voltage can be easily reduced, a method of producing the same, and an optical device. An n-type clad layer, a first guide layer, an active layer, a second guide...
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6407409 |
A method and apparatus for homoepitaxial growth of freestanding, single bulk crystal Gallium Nitride (GaN) are provided, wherein a step of nucleating GaN in a reactor results in a GaN nucleation layer having a thickness of a few monolaye...
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6403982 |
A semi-insulating bulk single crystal of silicon carbide is disclosed that has a resistivity of at least 5000 Ω-cm at room temperature and a concentration of deep level trapping elements that is below the amounts that will affect the re...
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6396080 |
A semi-insulating bulk single crystal of silicon carbide is disclosed that has a resistivity of at least 5000 Ω-cm at room temperature and a concentration of trapping elements that create states at least 700 meV from the valence or cond...
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6388272 |
Ohmic and rectifying contacts to a TaC layer on an n-type or p-type area of an SiC substrate are formed by depositing a WC layer over the TaC layer, followed by a metallic W layer. Such contacts are stable to at least 1150° C. Electrode...
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6372536 |
The invention relates to a II-VI semiconductor component in which, within a series of layers, there is provided at least one junction between a semiconductor layer containing BeTe and a semiconductor layer containing Se. A boundary layer...
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6365918 |
The present invention relates to a method and device for interconnecting radio frequency power SiC field effect transistors. To improve the parasitic source inductance advantage is taken of the small size of the transistors, wherein the ...
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6326654 |
A semiconductor material avalanche photodiode photodetector having ultraviolet response, solar radiation immunity and response speed in excess of that available from conventional ultraviolet photodetectors is described. The detector is a...
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6284395 |
A single crystal thin film of the compound ZnSi X Ge 1 -X N 2 (where x can range from 0 to 1). This thin film single crystal can be disposed on a single crystal substrate made of, for example, sapphire, silicon carbide, lithium gallate...
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