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7423292 |
There is provided a semiconductor device able to increase the mobility of carriers and reduce the current in the OFF state. The semiconductor device includes a gate electrode, an insulating layer on the gate electrode, a first electrode ...
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7326953 |
The invention relates to a layered construction for a Gunn diode. The layered construction comprises a series of stacked layers consisting of a first highly doped n d GaAs layer ( 3 ), a graded AlGaAs layer ( 5 ), which is placed upon t...
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7253522 |
A precision RF passive component including: a silicon substrate; a first dielectric layer deposited above the silicon substrate; a first metal layer formed above the first dielectric layer; a second dielectric layer formed above the firs...
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7202137 |
A process for producing an integrated electronic circuit. The process begins with the production of a first electronic component and a second electronic component that are superposed on top of a substrate. A volume of temporary material ...
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7148543 |
A semiconductor chip includes a base substrate, a bulk device region having a bulk growth layer on a part of the base substrate, an SOI device region having a buried insulator on the base substrate and a silicon layer on the buried insul...
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7098472 |
A two-terminal NDR device can be formed by coupling the gate and drain of an NDR-capable FET, such that the coupled gate and drain form a first terminal and the source of the NDR-capable FET forms the second terminal. By applying an appr...
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7087921 |
To provide an active electronic device which is formed from a carbon nanotube and which excels in high frequency operation and an electronic apparatus using the active electronic device. Provided are the active electronic device includin...
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6768130 |
A method of forming a semiconductor on insulator structure in a monolithic semiconducting substrate with a bulk semiconductor structure. A first portion of a surface of the monolithic semiconducting substrate is recessed without effectin...
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6528370 |
Provided are a semiconductor device which shows excellent negative differential conductance or negative transconductance and is manufactured without a complicated manufacturing process and a method of manufacturing the same. The semicond...
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6460170 |
A system and method is described for providing a robust mechanical and electrical connection between two or more circuit boards which may be employed for diagnostic purposes and/or for permanent connections. A spacer block, connection bl...
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6380729 |
A method for testing a plurality of integrated circuits. In one embodiment, a plurality of integrated circuits are arranged on a wafer. The integrated circuits are separated on the wafer across the boundary region. Testing interconnects ...
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6313478 |
There is provided a single electron device. The device has weak links with bottle-neck figure in place of the tunnel junction of the prior device. The weak links are easily formed on the same substrate by simple processes and thus the in...
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6184581 |
A surface mount circuit device (110), such as a flip chip, of the type which is attached to a conductor pattern (126) with solder bump connections (120). The solder bump connections (120) are formed by reflowing solder on shaped input/ou...
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6043518 |
Disclosed in this invention is a new four-terminal type and multiple delta-doped transistors with multiple functions grown by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). All the epilayers are grown on n + -GaAs subst...
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5892558 |
An active matrix LCD employs a two-terminal or three-terminal switch structure employing an electrically conductive wire. The wire has an insulating layer thereon forming a wire structure. The wire structure is placed in a groove in a tr...
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5436197 |
A test card (10) or a semiconductor die (150) having bonding pads (41-43, 180-182) for testing semiconductor devices, and a method for making the bonding pads (41-43, 180-182) are shown. The test card (10) or the semiconductor die (150) ...
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5150185 |
A semiconductor device comprises an n-type emitter layer, a p-type base layer formed in contact with the n-type emitter layer, a first collector layer formed in contact with the base layer, and having a bandgap substantially equal to tha...
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4894689 |
A transferred electron device is described in which the charge of the drifting packets is imaged perpendicular to the charge-packet direction so that essentially all of the packet-averaged, space-charge field is normal to the drift direc...
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4831422 |
A field effect transistor having a short channel length of 1 μm or less is disclosed. The transistor includes a plurality of impurity regions provided in the channel region between the source and drain regions. The impurity region has t...
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4481485 |
Transferred-electron device (TED) microwave burst and single pulse generators which are triggered by picosecond optical pulses. The burst generator includes a TED having a cathode, an anode, and a gate electrode positioned therebetween, ...
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4396931 |
The invention is a three-terminal transistor structure having five layers of materials that in combination provide conduction by high mobility carrier transport across the base in an energy valley above the conduction band. The conductio...
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4331967 |
In a field effect semiconductor device comprising a semi-insulator layer composed of a semiconductor material, an N conductivity type active layer made of the same semiconductor material and acting as a channel, spaced cathode and anode ...
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4320313 |
A Gunn-effect device originated from a Gunn-triode wherein electrodes are added between gate and anode for receiving high and low potentials representing states 1 and 0 of a binary code. In a normal Gunn-triode a very short pulse on the ...
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4242597 |
A device derived from a bulk semiconductor component called "Gunn-effect triode"; utilizing the propagation of travelling domains between gate and anode of said triode. Forming a register element with such a device consists of a "writing...
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4107718 |
A semiconductor device including a cathode and an anode for applying a bias electric field to a semiconductor exhibiting negative conductivity under high electric field, a region in which the electric field is locally lower than that in ...
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4047199 |
The invention disclosed relates to a bulk semiconductor device having a semiconductor element exhibiting a negative conductivity under a high electric field and being capable of generating a high electric field domain therein. The semico...
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4023196 |
An improved negative resistance element is disclosed, the element being composed of a semiconductor element and having an effective negative electroconductivity in a high electric field, the element being constructed so that the sectiona...
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4021680 |
Disclosed is a bulk semiconductor device which employs a semiconductor element exhibiting negative conductivity under a high electric field. Said semiconductor element has at least two regions and at least one bridge portion and each reg...
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3991328 |
A planar transferred electron device is biased such that the voltage across the anode and cathode electrodes is above that of a threshold voltage in the presence of which the device is characterized by a transfer of electrons from a high...
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3975690 |
A planar transmission line comprising a Gunn effect semiconductor having an epitaxial portion as the propagating medium amplifies and switches r.f. signals and is not transit time limited in the direction of propagation. The spacing betw...
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3967305 |
A single gate field-effect transistor including a semi-insulating substrate for providing a one-sided device geometry, an isolating mesa formed from a layer of semi-conductor material provided on a substrate surface and which exhibits bu...
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3963977 |
A semiconductive body in the form of a rectangular parallelepiped is formed of a semiconductive material, such as gallium arsenide or indium phosphide or Group IV elements, having an electric field-to-current characteristic either includ...
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3918009 |
A Gunn effect triode is modified to provide a phase modulator. It may, for example, generate a phase modulated output and may be used in a microwave modulator. It consists basically of a main branch and two side branches, each being bias...
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3906385 |
A Gunn effect triode is utilized to provide a power divider. The power divider may, for example, be provided with a main branch from which depend two or more legs and from each of which a replica of the input signal is obtained. Since a ...
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3848141 |
Presented is a semiconductor delay line which makes use of the transferred electron effect in order to provide useful delays in information processing applications at multigigabit rates.
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3836989 |
Disclosed is a semiconductor device comprising at least two semiconductor elements integrally connected by an insulator, each semiconductor showing negative differential conductivity under the influence of a high electric field. A high e...
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3766372 |
The invention disclosed is for a method and apparatus for controlling high electric field domain in a bulk semiconductor as well as an information processing method thereby. By means of a capacitive electrode, the high electric field dom...
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3753136 |
This invention relates to a solid state travelling wave amplifying device, utilizing such a semiconductor as n-type GaAs or n-type InP in which average velocity of electrons decreases with increasing electric field strength when an elect...
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3691481 |
Occurrence of high field domain in the conventional Gunn diode is prevented by covering a solid body such as a semiconductor element partially or wholly by a dielectric member or by a control element such as a metallic layer coupled reac...
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3689779 |
A Gunn-effect device in which the active layer of the semiconductor body is provided with a suitable recess, hole or opening which extends through the active layer in a direction perpendicular to the direction of drift movement of the ch...
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RE27385 |
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3667010 |
This invention is a multi-terminal Gunn-type semiconductor microwave generator capable of producing signals of stable frequency over a frequency range. In one form, a group III-V semiconductor chip having a varying cross-sectional area i...
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3659158 |
A wafer of bulk-effect material includes a first region contained between a first cathode and first anode and a second region contained between a second cathode and a second anode. The first and second cathodes and first and second anode...
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3624556 |
Traveling electric field domains are suppressed in a bulk-effect negative resistance device by including on the semiconductor wafer a plurality of dielectric stripes extending between the cathode and the anode contacts. The stripes tend ...
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3602734 |
A inhibited NOT circuit is described utilizing the Gunn effect. The NOT circuit is formed by connecting several semiconductor regions of the bulk negative resistance effect type in series relationship with interconnecting regions having ...
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3597625 |
A neuristor element is described which is formed of a pair of Gunn effect elements using bulk negative resistance effect materials capable of forming high electric field layers in the elements upon the application of electric field inten...
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3594618 |
A logic element is described utilizing a travelling field domain phenomenon, such as the Gunn effect, which occurs in a body of material when a field is produced in the body above a first threshold value to nucleate a domain and is maint...
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3593046 |
A communication system designed with semiconductive circuit arrangements using "Gunn Effect" devices exhibiting high field instability effects when an applied electrical field exceeds certain critical values. The transmitter has a plural...
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3587000 |
This is a semiconductor device consisting of a material which exhibits high field instability effects when a potential which exceeds a critical value is applied across the device. Electronic means to vary the conductivity profile along t...
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3551831 |
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