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Document Document Title
7473931
An improved device and method for mounting an avionic system is shown. The design provides varying locations of key components, which allows a single mounting system to be used with several varieties and configurations of aircraft within...  
7470938
In a nitride semiconductor light emitting device having patterns formed on the upper and lower surfaces of a substrate from which light is emitted in a flip chip bonding structure, the patterns are capable of changing light inclination a...  
7462871
In a side view LED, elongated first and second lead frames each have a finger extending therefrom. The finger of the first lead frame is disposed in parallel with that of the second lead frame. An LED chip and a protective device are mou...  
7462870
A molded package comprises at least a first metal member, a second metal member, and a third metal member. Each member includes an end portion inserted into a mold member where a recess is formed and another end portion protruding from a...  
7456500
A light source module having a plurality of LEDs connected to a metal carrier ( 4 ) by means of an insulating layer ( 3 ). In order to afford protection against mechanical effects and in order to form a reflector, the LEDs are surrounded...  
7456434
A micro optical bench structure and a method of manufacturing a micro optical bench structure are provided. The micro optical bench structure includes: a lower substrate; an upper substrate which is bonded to the lower substrate, and has...  
7446293
An electro-optical element is provided including a light-emitting element part and a light-receiving element part, wherein an optical thickness d of the light-receiving element part satisfies the following condition:
7446014
A method is provided for forming a NanoElectroChemical (NEC) cell. The method provides a bottom electrode with a top surface. Nanowire shells are formed. Each nanowire shell has a nanowire and a sleeve, with the nanowire connected to the...  
7445355
A light board is made with a receptacle substrate for accommodating cassette light units. The convenience of assembly and disassembly of the light units from the receptacle substrate makes the product easily to be maintained for changing...  
7439552
A semiconductor light-emitting device includes a light-emitting layer and a light extraction layer formed on the light-emitting layer and made of a resin material containing particles. The maximum size of each of the particles contained ...  
7439548
A surface mountable device having a circuit device and a base section. The circuit device includes top and bottom layers having a top contact and a bottom contact, respectively. The base section includes a substrate having a top base sur...  
7439487
There is disclosed optical encoder apparatus for removable connection with a printed circuit board. In an embodiment, the apparatus includes a light emitting component, a light detecting component, a mounting component for attaching the ...  
7432575
A high performance and small-scale circuitry substrate is described. The circuitry substrate includes a dielectric layer, a return plane attached to a bottom surface of the dielectric layer, and a plurality of return paths (ground) and s...  
7432533
An encapsulation for a device is disclosed. Spacer particles are randomly located in the device region to prevent a cap mounted on the substrate from contacting the active components, thereby protecting them from damage. The spacer parti...  
7429755
A high power LED comprises a substrate. An N-type semiconductor layer, an active layer and a P-type semiconductor layer are sequentially deposited on the substrate. A semi-insulator layer or a non-N-type semiconductor layer can be interp...  
7429754
A LED chip having first and second electrodes on opposite principal surfaces, is bonded to a substrate through a composite bonding layer. The composite bonding layer is formed when a support substrate including the substrate and a first ...  
7427804
A optoelectronic semiconductor device, mountable on and electrically connectable to an electro-optical wiring board, a substrate thereof having a light input/output through-hole and electric connection through-holes, the light input/outp...  
7427784
A light emitting diode (LED) package unit, including a substrate having a concave, a LED chip, at least two electrodes, at least two wires, a gel and a first wavelength-converting material. The LED chip, disposed in the concave, includin...  
7423719
An optical diffusion film comprises a plurality of diffraction grating cells formed on a substrate, each cell comprising a plurality of curved gratings disposed in parallel with each other and containing the same profile. Such film can b...  
7423294
A semiconductor light-emitting device includes: a semiconductor light-emitting element including a first conductive type semiconductor layer, an active layer including a light-emitting region, and a second conductive type semiconductor l...  
7423284
A light-emitting device includes a GaN substrate; a n-type Al x Ga 1-x N layer on a first main surface side of the GaN substrate; a p-type Al x Ga 1-x N layer positioned further away from the GaN substrate compared to the n-type Al x Ga ...  
7420271
A heat conductivity and brightness enhancing structure for light-emitting diode, including a bracket having a cathode leg support. A bowl structure is formed on upper end of the cathode leg support for resting a light-emitting chip there...  
7420218
An LED chip ( 2 ) is composed of a p-GaN layer ( 10 ), an n-GaN layer ( 14 ), and an MQW emission layer ( 12 ) that is sandwiched between the GaN layers ( 10 and 14 ). Each layer is made of a GaN semiconductor. Light exits the LED chip...  
7420216
A reflection type light-emitting diode device of a kind capable of emitting rays of light to the outside after having been reflected by a reflecting surface includes a recessed casing ( 22 ) having a cavity defining the reflecting surfac...  
7417260
A light emitting device includes: a first LED that emits a first primary light in a first primary wavelength range when activated; a second LED that emits a second primary light in a second primary wavelength range when activated, the se...  
7417257
A III-nitride power device for controlling high currents as an interdigitated electrode pattern for increasing device rating while decreasing device dimensions. Fingers of the interdigitated electrode pattern have tips with smaller dimen...  
7415185
A buried-waveguide light detecting element includes an n-type cladding layer on a Fe-InP substrate, a waveguide on a portion of the n-type cladding layer, and in which an n-type light guide layer, an i-light guide layer having a refracti...  
7414270
The invention provides an LED package and a backlight device incorporating the LED lens. The LED package has a bottom surface and a light exiting surface cylindrically extended around a central axis of the package from the bottom surface...  
7414269
The invention proposes a housing for at least two radiation-emitting components, particularly LEDs, comprising a system carrier ( 1 ) and a reflector arrangement ( 2 ) disposed on said system carrier ( 1 ), the reflector arrangement comp...  
7411224
A light emitting diode module, a backlight assembly having the light emitting diode module, and a display device having the backlight assembly. The light emitting diode module includes a light emitting device including a light emitting d...  
7411220
A semiconductor light emitting device can have stable electric characteristics and can emit light with high intensity from a substrate surface. The device can include a transparent substrate and a semiconductor layer on the substrate. Th...  
7408249
A packaged integrated circuit and method for producing thereof, including an integrated circuit substrate lying in a substrate plane and having electrical circuitry formed thereon, a package enclosing the integrated circuit substrate and...  
7402882
A charge coupled device includes a substrate; a plurality of image pixels arranged in a two dimensional array in the substrate for capturing an electronic representation of an image and for transferring charge in a first direction; a tra...  
7399651
An LED package structure includes a lower substrate, an upper substrate disposed on the lower substrate and having a though hole exposing a portion of the upper surface of the lower substrate; an individual LED unit disposed within the t...  
7397066
Microelectronic imagers with curved image sensors and methods for manufacturing curved image sensors. In one embodiment, a microelectronic imager device includes an imager die having a substrate, a curved microelectronic image sensor hav...  
7388232
A light emitting element has: a light emitting layer of semiconductor; and a diffusion layer that has a refractive index equal to or greater than that of the light emitting layer and that diffuses light emitted from the light emitting la...  
7385285
A light assembly includes a fin-type heatsink and a light module. The fin-type heatsink has a contact surface. The light module includes a thermally conductive cup-shaped chip seat and a light-emitting chip. The thermally conductive cup-...  
7385227
A light emitting device package and method for making the package utilizes a first leadframe having a first surface and a second leadframe having a second surface that are relatively positioned such that the second surface is at a higher...  
7375384
The present invention discloses a side structure of a bare LED and a backlight module thereof, wherein the backlight module is preferably a light source of a display device such as an LCD device. The backlight module includes a flat plat...  
7375380
A semiconductor light emitting device includes a semiconductor light emitting portion having a first contact layer of a first conductivity, a second contact layer of a second conductivity and an active layer sandwiched between the first ...  
7374958
A light emitting semiconductor bonding structure includes a structure formed by bonding a substrate onto a light emitting semiconductor. The substrate is a structure containing electric circuits. The ohmic contact N electrode layer and P...  
7372200
The present invention uses plastic film in vacuum sealing an OLED. Inorganic insulating films which can prevent oxygen or water from being penetrated therein and an organic insulating film which has a smaller internal stress than that of...  
7372080
Provided is a GaN-based semiconductor light emitting device formed on a GaN single-crystal substrate and having a configuration capable of reducing a current leak. A GaN-based semiconductor laser device ( 50 ) is disclosed as an example...  
7365407
A packaged circuit and method for packaging an integrated circuit are disclosed. The packaged circuit has a lead frame, an integrated circuit chip, and an encapsulating layer. The lead frame has first and second sections, the first secti...  
7365364
A sensor semiconductor device and a method for fabricating the same are proposed. A sensor chip is mounted on a substrate, and a dielectric layer and a circuit layer are formed on the substrate, wherein the circuit layer is electrically ...  
7365356
The invention relates to a photocathode having a structure that permits a decrease in the radiant sensitivity at low temperatures is suppressed so that the S/N ratio is improved. In the photocathode, a light absorbing layer is formed on ...  
7361936
An optical transmitting and/or receiving device has a semiconductor component with a first contact for connecting to a reference voltage and a second contact for obtaining or supplying a high-frequency electrical signal. There is also an...  
7358543
A light emitting device and method for fabricating the device utilizes a layer of photonic crystals and a region of diffusing material to enhance the light output of the device. The layer of photonic crystals is positioned over a light s...  
7358535
A photo-coupler semiconductor device includes first and second planar lead frames each having a main portion and a distal portion, a light emitting element and a light receiving element respectively mounted on upper surfaces of the dista...  
7355212
An InGaN active layer is formed on a sapphire substrate. A p-side electrode is formed on the InGaN active layer to supply an electric current to this InGaN active layer. The p-side electrode includes {circle around (1)} an Ni layer for f...  

Matches 1 - 50 out of 611