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7473930 |
Method and system for providing a dynamically reconfigurable display having nanometer-scale resolution, using a patterned array of multi-wall carbon nanotube (MWCNT) clusters. A diode, phosphor or other light source on each MWCNT cluster...
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7473150 |
A method is provided for forming a ZnO Si N—I—N EL device. The method comprises: forming an n-doped Si layer; forming a Si oxide (SiO2) layer overlying the n-doped Si layer; forming an n-type ZnO layer overlying the SiO2 layer; and, ...
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7470938 |
In a nitride semiconductor light emitting device having patterns formed on the upper and lower surfaces of a substrate from which light is emitted in a flip chip bonding structure, the patterns are capable of changing light inclination a...
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7459726 |
A semiconductor device which has a high performance integrated circuit formed of an inexpensive glass substrate and capable of processing a large amount of information and operating at higher data rates. The semiconductor device includes...
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7456434 |
A micro optical bench structure and a method of manufacturing a micro optical bench structure are provided. The micro optical bench structure includes: a lower substrate; an upper substrate which is bonded to the lower substrate, and has...
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7453092 |
A light emitting device having: a predetermined optical form that is provided on a surface of an LED element mounted on a base, the predetermined optical form being made to allow an increase in efficiency of taken out light from an insid...
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7453079 |
A surface mount type photo-interrupter includes an insulating base, a light emitting element and a light receiving element provided on the insulating base, a first terminal electrode for the light emitting element, a second terminal elec...
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7439547 |
A MEMS (micro electro mechanical system) apparatus is equipped with a light-emitting circuit, having a light-emitting device, to emit light; a light-receiving circuit having a series circuit of series-connected light-receiving devices th...
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7435994 |
A spacer layer is formed on a single-crystal substrate and an epitaxially grown layer composed of a group III-V compound semiconductor layer containing a nitride or the like is further formed on the spacer layer. The epitaxially grown la...
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7427834 |
Reducing the manufacturing cost of an EL display device and an electronic device furnished with the EL display device is taken as an objective. A textured structure in which projecting portions are formed on the surface of a cathode is u...
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7427804 |
A optoelectronic semiconductor device, mountable on and electrically connectable to an electro-optical wiring board, a substrate thereof having a light input/output through-hole and electric connection through-holes, the light input/outp...
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7427784 |
A light emitting diode (LED) package unit, including a substrate having a concave, a LED chip, at least two electrodes, at least two wires, a gel and a first wavelength-converting material. The LED chip, disposed in the concave, includin...
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7427523 |
A method of making a light emitting device is disclosed. The method includes providing a light emitting diode and forming an encapsulant in contact with the light emitting diode; wherein forming the encapsulant includes contacting the li...
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7425727 |
An optical semiconductor element 2 is mounted on a lead frame 1 , the optical semiconductor element 2 is encapsulated with a mold resin portion 14 of a first layer that has light permeability, and the mold resin portion 14 of th...
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7423294 |
A semiconductor light-emitting device includes: a semiconductor light-emitting element including a first conductive type semiconductor layer, an active layer including a light-emitting region, and a second conductive type semiconductor l...
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7423284 |
A light-emitting device includes a GaN substrate; a n-type Al x Ga 1-x N layer on a first main surface side of the GaN substrate; a p-type Al x Ga 1-x N layer positioned further away from the GaN substrate compared to the n-type Al x Ga ...
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7417259 |
A light-emitting device operating on a high drive voltage and a small drive current. LEDs ( 1 ) are two-dimensionally formed on an insulating substrate ( 10 ) of e.g., sapphire monolithically and connected in series to form an LED array....
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7415185 |
A buried-waveguide light detecting element includes an n-type cladding layer on a Fe-InP substrate, a waveguide on a portion of the n-type cladding layer, and in which an n-type light guide layer, an i-light guide layer having a refracti...
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7413917 |
An optoelectronic device includes a submount and a lid. The submount includes a substrate and a lens and a laser above the substrate. The lid defines a cavity having a surface coated with a reflective material to form a 45 degree mirror....
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7411224 |
A light emitting diode module, a backlight assembly having the light emitting diode module, and a display device having the backlight assembly. The light emitting diode module includes a light emitting device including a light emitting d...
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7411222 |
A package for light emitting element including a package main body 1 having a bottom face 7 a on which a light emitting element 2 is arranged, and a concave portion 7 which is formed in an inverted truncated cone shape by an inne...
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7408249 |
A packaged integrated circuit and method for producing thereof, including an integrated circuit substrate lying in a substrate plane and having electrical circuitry formed thereon, a package enclosing the integrated circuit substrate and...
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7397066 |
Microelectronic imagers with curved image sensors and methods for manufacturing curved image sensors. In one embodiment, a microelectronic imager device includes an imager die having a substrate, a curved microelectronic image sensor hav...
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7381995 |
Disclosed is a lighting device with flipped side-structure of LEDs, which allows emitted lights to travel in parallel with the mounting surface. Single or plural LED chips are mounted on a substrate with their side surfaces facing the su...
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7368754 |
The invention provides a semiconductor integrated circuit which allows a plurality of devices to be integrated compactly, that is, with high density; a signal transmitting device; an electro-optical device; and an electronic apparatus. A...
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7365407 |
A packaged circuit and method for packaging an integrated circuit are disclosed. The packaged circuit has a lead frame, an integrated circuit chip, and an encapsulating layer. The lead frame has first and second sections, the first secti...
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7361936 |
An optical transmitting and/or receiving device has a semiconductor component with a first contact for connecting to a reference voltage and a second contact for obtaining or supplying a high-frequency electrical signal. There is also an...
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7352010 |
A photoelectric conversion module with a cooling function has a semiconductor element to transmit/receive an optical signal, a stem to fix the semiconductor element, a cap to cover the semiconductor element, and a lead to apply an electr...
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7352000 |
Provided is an organic thin film transistor comprising a polymeric layer interposed between a gate dielectric and an organic semiconductor layer. Various homopolymers, copolymers, and functional copolymers are taught for use in the polym...
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RE40163 |
In a semiconductor light-emitting element, an underlayer is composed of a high crystallinity AlN layer having a FWHM in X-ray rocking curve of 90 seconds or below, and a first cladding layer is composed of an n-AlGaN layer. A light-emitt...
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7348583 |
An apparatus for producing wavelength stabilized electromagnetic radiation is provided, the apparatus comprising a broadband semiconductor radiation source configured to produce broadband electromagnetic radiation having a mean wavelengt...
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7342258 |
An object of the present invention is to provide a semiconductor device using a cheap glass substrate, capable of corresponding to the increase of the amount of information and further, having a high performance and an integrated circuit...
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7342257 |
An optical transmitter of the invention comprises a thermoelectric module, a light emitting device, and a light receiving device. The thermoelectric module comprises a first plate, a second plate, and a thermoelectric transducer. The fir...
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7335922 |
A radiation-emitting-and-receiving semiconductor component has at least a first semiconductor layer construction ( 1 ) for emitting radiation and a second semiconductor layer construction ( 2 ) for receiving radiation, which are arranged...
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7330319 |
A light source includes an LED die with an emitting surface and a plurality of optical elements having input surfaces in optical contact with distinct portions of the emitting surface. The optical elements can comprise tapers or concentr...
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7329942 |
An array-type modularized light-emitting diode structure and a method for packaging the structure. The array-type modularized light-emitting diode structure includes a lower substrate and an upper substrate fixed on the lower substrate. ...
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7326582 |
The present invention is generally directed to an optical isolator device, and various methods of making same. In one illustrative embodiment, the method comprises obtaining a single SOI substrate, the SOI substrate having an active laye...
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7322723 |
An illumination device has an illumination means formed by an arrangement of a plurality of semiconductor light sources ( 2 ) grouped together to form a field. Sensor elements ( 3 ) are arranged at individual positions of the field inste...
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7317210 |
The invention relates to an organic light emitting diode (OLED), also referred to as a light emitting diode, which comprises at least one substrate, one anode, one hole transport layer, one emitter layer, one cathode and one encapsulatio...
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7315139 |
A light source having first, second, and third component light sources that are driven by first, second, and third primary drive circuits is disclosed. Each primary drive circuit provides an average current to a corresponding one of the ...
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7307285 |
An optical semiconductor device includes a first set of lead frames having a first set of element mounting beds, a second set of lead frames having a second set of element mounting beds, which are arranged substantially on a same plane a...
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7298939 |
This application describes, among others, wafer designs, testing systems and techniques for wafer-level optical testing by coupling probe light to/from the top of a wafer. A wafer level test system uses optical and electronic probes to s...
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7294856 |
To provide an electro-optical device comprising a thin film having a uniform thickness, which is formed by drying liquid droplets filled in a liquid droplet ejection region surrounded by a partition. An electro-optical device comprises p...
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7288794 |
An improved integrated optical device ( 5 a - 5 g ) is disclosed containing first and second devices ( 10 a - 10 g ; 15 a , 15 e ), optically coupled to each other and formed in first and second different material systems. One of the fir...
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7282743 |
A light-emitting device operating on a high drive voltage and a small drive current. LEDs ( 1 ) are two-dimensionally formed on an insulating substrate ( 10 ) of e.g., sapphire monolithically and connected in series to form an LED array....
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7271461 |
An optoelectronics chip-to-chip interconnects system is provided, including packaged chips to be connected on printed-circuit-board (PCB), multiple-packaged chip, optical-electrical(O-E) conversion means, waveguide-board, and PCB. Single...
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7271099 |
A method of forming a conductive pattern on a substrate. The method comprising providing a substrate carrying a conductive layer; forming a first portion of the conductive pattern by exposing the conductive layer to a laser and controlli...
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7265389 |
A method for fabricating a light emitting diode (LED) is provided. Successively forming a first type doped semiconductor layer, a light emitting layer and a second type doped semiconductor layer on an epitaxy substrate; forming a bonding...
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7265374 |
A novel NPBL and ANPL light emitting semiconductor device and a method for fabricating the same are provided. In the present invention, plural nano-particles are applied in the active layer of the light emitting semiconductor device, so ...
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7256436 |
In a thin-film field-effect transistor having a MIS structure, the insulator layer is formed of cyanoethylated dihydroxypropyl pullulan. The TFT is prepared by applying a cyanoethylated dihydroxypropyl pullulan solution onto a gate elect...
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