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7473931 |
An improved device and method for mounting an avionic system is shown. The design provides varying locations of key components, which allows a single mounting system to be used with several varieties and configurations of aircraft within...
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7470938 |
In a nitride semiconductor light emitting device having patterns formed on the upper and lower surfaces of a substrate from which light is emitted in a flip chip bonding structure, the patterns are capable of changing light inclination a...
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7435995 |
A phosphor that emits white light due to excitation by a light emitting diode capable of emitting blue or ultraviolet light includes: a substrate that allows transmission of visible light; and a semiconductor layer formed on the substrate.
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7432533 |
An encapsulation for a device is disclosed. Spacer particles are randomly located in the device region to prevent a cap mounted on the substrate from contacting the active components, thereby protecting them from damage. The spacer parti...
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7417251 |
An active matrix organic EL display device includes pixels each having an organic EL element ( 7 a ) and a pixel circuit ( 3 ) including a polysilicon TFT for controlling the organic EL element ( 7 a ) arranged adjacently in each of the ...
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7414269 |
The invention proposes a housing for at least two radiation-emitting components, particularly LEDs, comprising a system carrier ( 1 ) and a reflector arrangement ( 2 ) disposed on said system carrier ( 1 ), the reflector arrangement comp...
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7411215 |
To achieve promotion of stability of operational function of display device and enlargement of design margin in circuit design, in a display device including a pixel portion having a semiconductor element and a plurality of pixels provid...
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7405432 |
The present invention provides a highly controllable device for exposure from the back side and an exposure method, and also provides a method of manufacturing a semiconductor device using the same. The present invention involves exposur...
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7400004 |
Regions of an integrated circuit are isolated by a structure that includes at least one isolating trench on the periphery of an active area. The trench is deep, extending at least about 0.5 μm into the substrate. The isolating structure...
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7399992 |
An integrated circuit chip (IC) is equipped with a device for preventing reverse engineering by monitoring light emissions emitted from transistors and such electrically active devices in a circuit located in the IC. The device emits ext...
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7397066 |
Microelectronic imagers with curved image sensors and methods for manufacturing curved image sensors. In one embodiment, a microelectronic imager device includes an imager die having a substrate, a curved microelectronic image sensor hav...
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7385255 |
The present invention provides a MOSFET having a low on-state resistance and a high withstand voltage as well as a small output capacitance (C(gd), etc.). The MOSFET has a p-type base layer 4 and a n-type source layer 5 selectively f...
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7368755 |
Provided is an array substrate of an LCD that includes a substrate, an active layer, a first insulating layer, and a gate electrode sequentially formed on the substrate. A source region and a drain region reside in predetermined regions ...
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7352066 |
Method of fabricating a semiconductor die with a microlens associated therewith. More particularly, a method for fabricating a vertical channel guide optical via through a silicon substrate wherein the optical via can contain lens elemen...
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7352008 |
The present invention relates to a field effect transistor having heterostructure with a buffer layer or substrate. A channel is arranged on the buffer layer or on the substrate, and a capping layer is arranged on the channel. The channe...
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7345314 |
An organic light emitting diode display includes an insulating layer, a stress buffer disposed on the insulating layer, a first electrode disposed on the stress buffer, an organic light emitting member disposed on the first electrode, an...
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7345313 |
A nitride-based semiconductor component having a semiconductor body ( 1 ) with a contact metalization ( 4 ) applied thereon. The semiconductor body ( 1 ) is provided with a protective layer which, if appropriate, also covers partial regi...
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7335921 |
Lighting devices using feedback-enhanced luminescent devices are disclosed. A light emitting diode disposed between feedback elements (FE-LED) may be used as a light emitting element in the lighting devices. The light emitting element ma...
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7335919 |
Provided is an active matrix organic electroluminescent (EL) display device including an organic thin film transistor (TFT), preferably n-type, having a higher aperture ratio and easily realized in an array structure. The display device ...
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7329942 |
An array-type modularized light-emitting diode structure and a method for packaging the structure. The array-type modularized light-emitting diode structure includes a lower substrate and an upper substrate fixed on the lower substrate. ...
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7326965 |
A surface-emitting type device includes a substrate including a first face, a second face that is tilted with respect to the first face and has a plane index different from a plane index of the first face, and a third face that is tilted...
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7323720 |
A light-emitting device includes a substrate having a plurality of light-emitting elements and a light emission region arranged on one surface thereof, light being emitted from one surface of the light emission region; and an integrated ...
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7319553 |
Disclosed herein is an optical modulator module package structure. In the optical modulator module package structure, an optical modulator device and a drive integrated circuit device are flip-chip bonded to a substrate, and an opening o...
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7307285 |
An optical semiconductor device includes a first set of lead frames having a first set of element mounting beds, a second set of lead frames having a second set of element mounting beds, which are arranged substantially on a same plane a...
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7288794 |
An improved integrated optical device ( 5 a - 5 g ) is disclosed containing first and second devices ( 10 a - 10 g ; 15 a , 15 e ), optically coupled to each other and formed in first and second different material systems. One of the fir...
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7274039 |
A method of fabricating a substrate for an organic electroluminescent display device includes forming a first electrode on a substrate in a pixel region and a non-pixel region, the first electrode including a first conductive material, f...
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7271461 |
An optoelectronics chip-to-chip interconnects system is provided, including packaged chips to be connected on printed-circuit-board (PCB), multiple-packaged chip, optical-electrical(O-E) conversion means, waveguide-board, and PCB. Single...
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7268416 |
A mounting structure includes a mounting substrate on which a plurality of mounting pads each constituting a portion of a conductive pattern extending in a Y direction are arranged in an X direction, the X direction and the Y direction b...
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7268370 |
A phosphor that emits white light due to excitation by a light emitting diode capable of emitting blue or ultraviolet light includes: a substrate that allows transmission of visible light; and a semiconductor layer formed on the substrate.
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7268361 |
The invention provides an electron beam device 1 comprising at least one field emission cathode 3 and at least one extracting electrode 5 , whereby the field emission cathode 5 comprises a p-type semiconductor region 7 connected...
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7265391 |
To provide a light emitting device high in reliability with a pixel portion having high definition with a large screen. According to a light emitting device of the present invention, on an insulator ( 24 ) provided between pixel electrod...
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7256098 |
A method of making a memory device and a memory device is described. In one embodiment, a method of manufacturing a memory device is described. The method includes providing a substrate having a tunneling layer deposited on a main surfac...
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7242030 |
A quantum dot/quantum well light emitting diode (LED) is provided with a LED at one side of a substrate, and a second light emitting layer and a third light emitting layer at the other side of the substrate. When a proper forward bias is...
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7242029 |
A light emitting element array is made with large light emitting elements and small light emitting elements are arranged on a substrate in a matrix-like form. The large light emitting element has the luminescent area of about 1 mm square...
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7217955 |
A semiconductor laser device includes a one-body submount composed of a predetermined material such as SiC or AlN and placed on a mounting surface. A laser diode is placed on a front portion of an upper surface of the submount. A monitor...
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7214971 |
A semiconductor light-receiving device has a substrate including upper, middle and lower regions in its front side. A p-type layer on the lower region has a top surface including a portion on a level with the middle region. An electrode ...
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7196357 |
The optical semiconductor apparatus includes, on an n-GaAs substrate, a surface-emitting semiconductor laser device and a photodiode integrated on the periphery of the laser device with an isolation region interposed there between. The l...
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7196355 |
An optoelectronic module comprising at least one optical component placed on a support, said component comprising an active optical layer and at least one confinement layer which carries at least one electrical contact, wherein said modu...
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7187813 |
An optical transistor is disclosed. An apparatus according to aspects of the present invention includes optical waveguide disposed in semiconductor material. A diode structure is disposed in the optical waveguide. The diode structure inc...
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7183581 |
An optical transmission module that can be produced more easily and uses a shorter wiring pattern connecting the driving device and the light-emitting device than the conventional light-emitting apparatus, with the driving device and the...
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7176612 |
An LED device at least including a blue light emitting element having peak emission wavelength of 420 nm to 480 nm, a green fluorescent substance having peak wavelength of fluorescent spectrum in the range of 500 nm to 580 nm with the em...
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7176503 |
An LED package comprises a substrate, one or three terminals formed on a first side of the substrate, three terminals formed on a second side opposite to the first side, and two or three LEDs disposed on the substrate, one of the LEDS be...
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7170099 |
An optical semiconductor device includes a first set of lead frames having a first set of element mounting beds, a second set of lead frames having a second set of element mounting beds, which are arranged substantially on a same plane a...
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7167498 |
A semiconductor electrooptic monolithic component comprising successively a first section capable of emitting light at a first wavelength and including a first active layer, a second section capable of absorbing light at the said first w...
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7166868 |
The electrodes of a light emitting diode (LED) is coupled to the terminals of a package with solderless pressure contacts. Each package is housed in a module with a bed on which the bottom electrode of the LED rests, and a pressure plate...
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7164156 |
An integrated circuit with a number of optical waveguides that are formed in high aspect ratio holes. The high aspect ratio holes extend through a semiconductor wafer. The optical waveguides include a highly reflective material that is d...
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7164155 |
A light emitting device having a plastic substrate is capable of preventing the substrate from deterioration with the transmission of oxygen or moisture content can be obtained. The light emitting device has light emitting elements forme...
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7157746 |
The light emitting device has a light emitting diode which is made of a nitride semiconductor and a phosphor which absorbs a part of lights emitted from the light emitting diode and emits different lights with wavelengths other than thos...
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7157741 |
A silicon optoelectronic device and an optical transceiver, wherein the silicon optoelectronic device includes an n- or p-type silicon-based substrate and a doped region formed in a first surface of the substrate and doped to an opposite...
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7154136 |
Regions of an integrated circuit are isolated by a structure that includes at least one isolating trench on the periphery of an active area. The trench is deep, extending at least about 0.5 μm into the substrate. The isolating structure...
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