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7473150 |
A method is provided for forming a ZnO Si N—I—N EL device. The method comprises: forming an n-doped Si layer; forming a Si oxide (SiO2) layer overlying the n-doped Si layer; forming an n-type ZnO layer overlying the SiO2 layer; and, ...
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7470938 |
In a nitride semiconductor light emitting device having patterns formed on the upper and lower surfaces of a substrate from which light is emitted in a flip chip bonding structure, the patterns are capable of changing light inclination a...
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7417258 |
A method of manufacturing a nitride semiconductor device comprises the steps of: growing an In x Ga 1-x N (0≦x≦1) layer, and growing an aluminium-containing nitride semiconductor layer over the In x Ga 1-x N layer at a growth tempera...
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7411220 |
A semiconductor light emitting device can have stable electric characteristics and can emit light with high intensity from a substrate surface. The device can include a transparent substrate and a semiconductor layer on the substrate. Th...
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7355213 |
As a p-type ohmic contact electrode formation technique in a Group II-VI compound semiconductor, there is provided a material for forming an electrode that is low in resistance, stable, and not toxic, and is excellent in productivity, th...
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7345297 |
A semiconductor device includes an active layer, an n-side contact layer, and a p-side contact layer. The nitride semiconductor device includes at least a first n-side layer, a second n-side layer, a third n-side layer and a fourth n-sid...
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7329942 |
An array-type modularized light-emitting diode structure and a method for packaging the structure. The array-type modularized light-emitting diode structure includes a lower substrate and an upper substrate fixed on the lower substrate. ...
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7307284 |
A light-emitting diode based on GaAlAs has a window layer ( 5 ) of reduced thickness and is doped continuously with Si or Sn. The net concentration of the doping is less than 1 ×10 18 cm −3 . This provision lessens the degradation of...
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7294848 |
In one aspect, a semiconductor device includes a p-region and an n-region. The p-region includes a first Group IV semiconductor that has a bandgap and is doped with a p-type dopant, and a first region of local crystal modifications induc...
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7274041 |
An electronic or optoelectronic device fabricated from a crystalline material in which a parameter of a bandgap characteristic of said crystalline material has been modified locally by introducing distortions on an atomic scale in the la...
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7271418 |
The present invention is a semiconductor apparatus for white light generation and amplification, where, under different current bias, white light can be generated steadily and evenly by folding up multi-wavelength quantum wells and by si...
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7271417 |
The invention relates to a light-emitting element with porous light-emitting layers. The light-emitting element comprises: a substrate, a first conductive cladding layer, a second conductive cladding layer and at least one porous light-e...
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7259406 |
A semiconductor optical element having a includes an n-type GaAs buffer layer, an n-type AlGaInP cladding layer, a first InGaAsP (including zero As content)guide layer without added dopant impurities, an InGaAsP (including zero In conten...
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7251265 |
An optically pumped micro-cavity laser has an optical gain cavity and an optical resonant cavity. The optical gain cavity has a gain medium disposed that generates an optical output in response to an optical pump signal. The optical reso...
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7247885 |
In one aspect, a first region that includes a first Group IV semiconductor that has a bandgap and is doped with a first dopant of a first electrical conductivity type is formed. A pattern is created. The pattern controls formation of loc...
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7244964 |
An n-type layer of the opposite conduction type composed of n-GaN is formed between a light emitting layer and a p-type cladding layer composed of p-AlGaN. The bandgap of the n-type layer of the opposite conduction type is larger than th...
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7223998 |
A white, single or multi-color light emitting diode (LED) includes a mirror for reflecting photons within the LED; a first active region, adjacent the mirror, including one or more current-injected layers for emitting photons when electr...
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7192794 |
A method for forming a transparent electrode on a visible light-emitting diode is described. A visible light-emitting diode element is provided, and the visible light-emitting diode element has a substrate, an epitaxial structure and a m...
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7180101 |
The present invention provides a semiconductor device including an element that is considered to have less environmental problem (for example iron), and a method for manufacturing the same. More specifically, in a semiconductor device ha...
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7176503 |
An LED package comprises a substrate, one or three terminals formed on a first side of the substrate, three terminals formed on a second side opposite to the first side, and two or three LEDs disposed on the substrate, one of the LEDS be...
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7176498 |
A semiconductor device and method of its fabrication are provided to enable the device operation in a THz spectral range. The device comprises a heterostructure including at least first and second semiconductor layers. The first and seco...
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7166870 |
Light-emitting devices, and related components, systems and methods are disclosed.
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7157741 |
A silicon optoelectronic device and an optical transceiver, wherein the silicon optoelectronic device includes an n- or p-type silicon-based substrate and a doped region formed in a first surface of the substrate and doped to an opposite...
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7154127 |
A semiconductor laminating portion including a light emitting layer forming portion having at least an n-type layer and a p-type layer is formed on a semiconductor substrate. A current blocking layer is partially formed on its surface. A...
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7154123 |
A nitride-based semiconductor light-emitting device capable of improving light extraction efficiency is provided. This nitride-based semiconductor light-emitting device comprises a first nitride-based semiconductor layer formed on the su...
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7151281 |
A light-emitting diode (LED) structure with electrostatic discharge (ESD) protection is described. The LED includes a substrate, a patterned semiconductor layer, a first electrode and a second electrode. The patterned semiconductor layer...
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7135711 |
An electroluminescent component ( 1 ), in particular an LED chip, which has a high external efficiency in conjunction with a simple construction. The electroluminescent component ( 1 ) has a substrate ( 2 ); a plurality of radiation deco...
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7122842 |
A light emitting assembly comprising a solid state device coupleable with a power supply constructed and arranged to power the solid state device to emit from the solid state device. A series of rare-earth doped silicon and/or silicon ca...
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7119372 |
A flip chip light emitting diode die ( 10, 10′, 10 ″) includes a light-transmissive substrate ( 12, 12′, 12 ″) and semiconductor layers ( 14, 14′, 14 ″) that are selectively patterned to define a device mesa ( 30, 30′, 30 â...
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7115910 |
Novel structures of the photodetector having broad spectral ranges detection capability (from UV to 1700 nm (and also 2500 nm)) are provided. The photodetector can offer high quantum efficiency >95% over wide spectral ranges, high fre...
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7115908 |
A semiconductor light emitting device includes a light emitting layer sandwiched between two spacer layers. The difference between the net polarization in at least one of the spacer layers and the net polarization in the light emitting l...
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7112829 |
A light emission device and method for producing the device. The device includes, on a substrate, a stack including an etching stop layer, a first barrier layer, an emitting layer, and a second barrier layer. The stop layer is of the sam...
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7105857 |
A substrate 1 for growing nitride semiconductor has a first and second face and has a thermal expansion coefficient that is larger than that of the nitride semiconductor. At least n-type nitride semiconductor layers 3 to 5, an acti...
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7102176 |
An organic electroluminescent display panel includes: one or more organic electroluminescent elements each having first and second display electrodes and one or more organic functional layers of organic compounds sandwiched and layered b...
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7098482 |
A monolithic white light emitting device is provided. An active layer in the monolithic white light emitting device is doped with silicon or rare earth metal that forms a sub-band. The number of active layers included in the monolithic w...
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7095051 |
In a nitride semiconductor device having an active layer 12 between a first electrically conductive type of layer and a second electrically conductive type of layer, a quantum well structure is adopted in which an active layer 12 has...
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7095050 |
Monolithic, tandem, photonic cells include at least a first semiconductor layer and a second semiconductor layer, wherein each semiconductor layer includes an n-type region, a p-type region, and a given band-gap energy. Formed within eac...
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7095042 |
A semiconductor light emitting device including a p-type electrode structure and having a low contact resistance and high reflectance is provided. The semiconductor light emitting device includes a transparent substrate, an electron inje...
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7095041 |
A high-efficiency light emitting diode is provided. The light emitting diode includes a substrate; a first compound semiconductor layer formed on the top surface of the substrate; a first electrode formed on a region of the first compoun...
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7075120 |
It is an object of the present invention to provides the light emitting diode having a light emitting part of an AlGaInP type, and having a current diffusion layer which includes In on a light emitting side of the light emitting part, so...
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7053413 |
A light emitting device, such as a light emitting diode or a laser diode. The light emitting device comprises a light emitting semiconductor active region disposed on a substrate. The substrate comprises an optical absorption coefficient...
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7048872 |
Fast, bright inorganic scintillators at room temperature are based on radiative electron-hole recombination in direct-gap semiconductors, e.g. CdS and ZnO. The direct-gap semiconductor is codoped with two different impurity atoms to conv...
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7042013 |
A radiation-emitting semiconductor component having a layer structure which contains an n-doped cladding layer ( 18 ), a p-doped cladding layer ( 20 ), and an active layer ( 14 ) based on InGaAlP arranged between the n-doped cladding lay...
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7034342 |
A light emitting layer forming portion is provided on a semiconductor substrate, in which an active layer made of a compound semiconductor is sandwiched between a first and second clad layers made of compound semiconductor having band ga...
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7030415 |
The present invention relates to an optical communication, and more particularly, to a wideband wavelength division multiplexing (WDM) optical communication system which can have a broad amplification band while overcoming a polarization...
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6998690 |
A gallium nitride-based III-V Group compound semiconductor device has a gallium nitride-based III-V Group compound semiconductor layer provided over a substrate, and an ohmic electrode provided in contact with the semiconductor layer. Th...
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6998643 |
A silicon-based light emitting diode simultaneously adopts doping layers and Distributed Bragg Reflector (DBR). The silicon-based light emitting diode includes an active layer having mutually opposing a first side and a second side. A fi...
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6995398 |
A method is disclosed for treating a silicon carbide substrate for improved epitaxial deposition thereon and for use as a precursor in the manufacture of devices such as light emitting diodes. The method includes the steps of implanting ...
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6974974 |
A semiconductor light emitting device is disclosed, including a semiconductor substrate, an active region comprising a strained quantum well layer, and a cladding layer for confining carriers and light emissions, wherein the amount of la...
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6958496 |
This invention this invention provides a light-emitting semiconductor device having enhanced brightness, to ensure even current distribution emitted by a front contact of the light emitting diodes so as to improve the light-emitting effi...
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