| Document |
Document Title |
|
7470938 |
In a nitride semiconductor light emitting device having patterns formed on the upper and lower surfaces of a substrate from which light is emitted in a flip chip bonding structure, the patterns are capable of changing light inclination a...
|
|
7462982 |
A flat panel display is provided. The flat panel display includes a silicon light-emitting device panel having a two-dimensional array of silicon light-emitting devices formed on an n- or p-type silicon-based substrate, and a fluorescent...
|
|
7453096 |
A semiconductor light-emitting device has a semiconductor layer containing Al between a substrate and an active layer containing nitrogen, wherein Al and oxygen are removed from a growth chamber before growing said active layer and a con...
|
|
7402836 |
In an active matrix type light emitting device, an upper surface injection type light emitting device in which an anode formed on the upper portion of the organic compound layer becomes an electrode for taking out the light is provided. ...
|
|
7329942 |
An array-type modularized light-emitting diode structure and a method for packaging the structure. The array-type modularized light-emitting diode structure includes a lower substrate and an upper substrate fixed on the lower substrate. ...
|
|
7329902 |
The present invention relates to a new light emitters that exploit the use of semiconducting single walled carbon nanotubes (SWNTs). Experimental evidences are given on how it is possible, within the standard silicon technology, to devis...
|
|
7329898 |
A light-emitting device comprising a pair of electrodes and one or more organic layers disposed between the electrodes, the one or more organic layers comprising a light-emitting layer. At least one of the organic layers comprises a tran...
|
|
7274041 |
An electronic or optoelectronic device fabricated from a crystalline material in which a parameter of a bandgap characteristic of said crystalline material has been modified locally by introducing distortions on an atomic scale in the la...
|
|
7247885 |
In one aspect, a first region that includes a first Group IV semiconductor that has a bandgap and is doped with a first dopant of a first electrical conductivity type is formed. A pattern is created. The pattern controls formation of loc...
|
|
7244964 |
An n-type layer of the opposite conduction type composed of n-GaN is formed between a light emitting layer and a p-type cladding layer composed of p-AlGaN. The bandgap of the n-type layer of the opposite conduction type is larger than th...
|
|
7180154 |
Integrated circuit devices are provided including an integrated circuit substrate and first through fourth spaced apart lower interconnects on the integrated circuit substrate. The third and fourth spaced apart lower interconnects are pa...
|
|
7180100 |
A semiconductor light-emitting device has a semiconductor layer containing Al between a substrate and an active layer containing nitrogen, wherein Al and oxygen are removed from a growth chamber before growing said active layer and a con...
|
|
7176498 |
A semiconductor device and method of its fabrication are provided to enable the device operation in a THz spectral range. The device comprises a heterostructure including at least first and second semiconductor layers. The first and seco...
|
|
7173286 |
Semiconductor devices formed by depositing III-nitride compounds on lithium niobate and/or lithium tantalate substrates are disclosed. Also disclosed, are semiconductor devices formed by depositing lithium niobate and/or lithium tantalat...
|
|
7166870 |
Light-emitting devices, and related components, systems and methods are disclosed.
|
|
7157741 |
A silicon optoelectronic device and an optical transceiver, wherein the silicon optoelectronic device includes an n- or p-type silicon-based substrate and a doped region formed in a first surface of the substrate and doped to an opposite...
|
|
7095042 |
A semiconductor light emitting device including a p-type electrode structure and having a low contact resistance and high reflectance is provided. The semiconductor light emitting device includes a transparent substrate, an electron inje...
|
|
7067838 |
A light-emitting apparatus employing a GaN-based semiconductor. The light-emitting apparatus comprises an n-type clad layer ( 124 ); an active layer ( 129 ) including an n-type first barrier layer ( 126 ), well layers ( 128 ), and second...
|
|
7053422 |
The present invention provides a solid state light-emissive display apparatus of high brightness and efficiency, high reliability, and of thin type, and method of manufacturing the same at low cost. Said apparatus has the luminous thin ...
|
|
7048872 |
Fast, bright inorganic scintillators at room temperature are based on radiative electron-hole recombination in direct-gap semiconductors, e.g. CdS and ZnO. The direct-gap semiconductor is codoped with two different impurity atoms to conv...
|
|
7030419 |
Thin film for optical applications, light-emitting structure using the same and the fabrication method thereof are disclosed. The present invention provides a silica or silica-related thin film for optical applications in which silicon n...
|
|
6998721 |
In one embodiment, a device includes but is not limited to: a first integrated circuit affixed to a substrate; an electronic circuit component affixed to the substrate; a first encapsulation structure encasing the first integrated circui...
|
|
6974974 |
A semiconductor light emitting device is disclosed, including a semiconductor substrate, an active region comprising a strained quantum well layer, and a cladding layer for confining carriers and light emissions, wherein the amount of la...
|
|
6970490 |
When the density of excitons in an organic single crystal (including the linear acenes, polyacenes, and thiophenes) approaches the density of molecular sites, an electron-hole plasma may form in the material altering the overall excitoni...
|
|
6956240 |
In an active matrix type light emitting device, a top surface exit type light emitting device in which an anode formed at an upper portion of an organic compound layer becomes a light exit electrode is provided. In a light emitting eleme...
|
|
6940098 |
A growth plane of substrate 1 is processed to have a concavo-convex surface. The bottom of the concave part may be masked. When a crystal is grown by vapor phase growth using this substrate, an ingredient gas does not sufficiently reac...
|
|
6930330 |
A silicon optoelectronic device and a light-emitting apparatus using the silicon optoelectronic device are provided. The silicon optoelectronic device includes: a substrate based on an n-type or p-type silicon; a doped region formed on o...
|
|
6911675 |
A semiconductor device reduced in size is provided in which the surface area outside of a display portion required for IC chips to mounted is reduced in a semiconductor device having an active matrix display portion. Further, signal wiri...
|
|
6894307 |
Organic light emitting devices are described wherein the emissive layer comprises a host material containing a fluorescent or phosphorescent emissive molecule, which molecule is adapted to luminesce when a voltage is applied across the h...
|
|
6881978 |
A semiconductor epitaxial structure includes a first semiconductor epitaxial layer and a second semiconductor epitaxial layer having a wider energy band gap than the first semiconductor epitaxial layer. The first semiconductor epitaxial ...
|
|
6876002 |
A semiconductor laser element includes, on a substrate, at least a first conductive type first clad layer, an active layer, a second conductive type second clad layer, a current block layer having a stripe-shaped deficient portion extend...
|
|
6870193 |
In a semiconductor light emitting device such as a semiconductor laser using nitride III-V compound semiconductors and having a structure interposing an active layer between an n-side cladding layer and a p-side cladding layer, the p-sid...
|
|
6861674 |
An electroluminescent device ( 1 ) comprises a supporting substrate ( 2 ); at least two electrodes ( 3 ) positioned on the substrate ( 2 ); at least a three-dimensional percolated layer ( 4 ), positioned on the substrate ( 2 ) between th...
|
|
6858876 |
A multi-layer semiconductor diode having a layer of wide bandgap material located between the active layer and a first contact zone, where the active layer and additional wide bandgap layer are of one dopant type, and the first contact z...
|
|
6855959 |
A nitride based semiconductor photo-luminescent device has an active layer having a quantum well structure. The active layer has both a high dislocation density region and a low dislocation density region that is lower in dislocation den...
|
|
6847045 |
A cold electron emitter may include a heavily a p-doped semiconductor, and dielectric layer, and a metallic layer (p-D-M structure). A modification of this structure includes a heavily n+ doped region below the p region (n+-p-D-M structu...
|
|
6831302 |
Light-emitting devices, and related components, systems and methods are disclosed.
|
|
6803603 |
Part of light emitted downward by an active layer is reflected by an electrode functioning as a reflective layer, and travels upward to radiate outside. Since the electrode is made of a metal, it reflects almost all light regardless of i...
|
|
6797991 |
The nitride semiconductor device includes: a substrate made of a III-V group compound semiconductor containing nitride; and a function region made of a III-V group compound semiconductor layer containing nitride formed on a main surface ...
|
|
6791115 |
A light emitting device has a substrate and a light-emitting section formed on the substrate. The light-emitting section includes a light-emitting layer in which light is generated by electro-luminescence, first and second electrodes use...
|
|
6777724 |
A light-emitting device includes an anode, a cathode, and at least one organic electroluminescent (“EL”) material positioned between the anode and the cathode. Nanoparticles of at least one photoluminescent material are dispersed in ...
|
|
6677059 |
The invention aims to solve the problem of prior art EL devices that undesirable defects form in dielectric layers, and especially the problems of EL devices having dielectric layers of lead-base dielectric material including a lowering,...
|
|
6653663 |
The nitride semiconductor device includes: a substrate made of a III-V group compound semiconductor containing nitride; and a function region made of a III-V group compound semiconductor layer containing nitride formed on a main surface ...
|
|
6649943 |
Disclosed is a Group III nitride compound semiconductor light-emitting element formed of Group III nitride compound semiconductor layers, including a multi-layer containing light-emitting layers; a p-type semiconductor layer; and an n-ty...
|
|
6639354 |
An n-type cladding layer formed of a non-single crystal body of n-type AlGaN, a light emitting layer containing a plurality of micro-crystals made from ZnO, and a p-type cladding layer formed of a non-single crystal body of p-type BN are...
|
|
6607932 |
A light emitting device providing a first part that includes a source of excess minority carriers including excess electron-hole pairs; a second part, coupled to the first part, that includes a minority carrier barrier; and a third part,...
|
|
6599133 |
A method for fabricating p-type, i-type, and n-type III-V compound materials using HVPE techniques is provided. If desired, these materials can be grown directly onto the surface of a substrate without the inclusion of a low temperature ...
|
|
6566688 |
A compound semiconductor device is provided that includes a substrate and an active region disposed above the substrate. The active region includes at least two different pseudomorphic layers, the first layer having the form In x Ga 1−...
|
|
6515298 |
Organic light emitting devices are described wherein the emissive layer comprises a host material containing a fluorescent or phosphorescent emissive molecule, which molecule is adapted to luminesce when a voltage is applied across the h...
|
|
6504178 |
A semiconductor imaging device is disclosed. The device includes a substrate having at least first and second surfaces opposing each other, and a circuit layer. The substrate is doped to exhibit a first conductivity type. The substrate i...
|
