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7473935 |
A white-light emitting semiconductor device includes a first light-emitting die, a second light-emitting die, a photostimulable luminescent substance, and a holding assembly. The first light-emitting die emits a first radiation having a ...
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7473933 |
LED packages are provided that can accommodate more than one type of LED. These packages include at least three bonding pads arranged such that two are appropriate for one type of LED, while another two are appropriate for another type o...
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7473932 |
An organic light emitting device (OLED) and a method for manufacturing the same are disclosed. In one embodiment, the OLED includes i) a pixel layer having a first electrode, a second electrode, and a light emitting portion interposed be...
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7473931 |
An improved device and method for mounting an avionic system is shown. The design provides varying locations of key components, which allows a single mounting system to be used with several varieties and configurations of aircraft within...
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7470938 |
In a nitride semiconductor light emitting device having patterns formed on the upper and lower surfaces of a substrate from which light is emitted in a flip chip bonding structure, the patterns are capable of changing light inclination a...
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7470936 |
It is to be made easy to arrange light emitting diodes, each including a lens having a hemispherical light emitting surface, and cover the base of the light emitting diodes with resin material. A light emitting diode 1 has a light emi...
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7462874 |
A silicon-based light emitting structure is formed as a high density array of light-emitting p-n junctions that substantially increases the intensity of the light emitted in a planar region. The p-n junctions are formed using standard CM...
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7462873 |
Provided is a light emitting structure which can emit light having a plurality of wavelength distributions from a single light emitting structure, can be integrated at high density, and can control a radiation mode pattern of radiation l...
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7462502 |
A light emitting device is produced by depositing a layer of wavelength converting material over the light emitting device, testing the device to determine the wavelength spectrum produced and correcting the wavelength converting member ...
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7459723 |
An active matrix substrate includes base substrate, gate lines, data lines, thin-film transistors and pixel electrodes. The gate lines are formed on the base substrate. The data lines are formed over the gate lines. Each of the data line...
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7456449 |
A semiconductor apparatus has a substrate to which is attached a thin semiconductor film including at least one semiconductor device. An interconnecting line links the semiconductor film with electrical circuitry on the substrate. The in...
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7453097 |
A nanowire light emitting device and a method of fabricating the same are provided. The nanowire light emitting device includes a first conductive layer on a substrate, a plurality of nanowires on the first conductive layer, each nanowir...
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7452736 |
There are provided a surface emitting device and a projection display device, in which high power output can be produced by configuring a large-scaled LED. The surface emitting device includes a plurality of stacked light emitting elemen...
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7449789 |
A light-emitting device ( 12 ) includes a base ( 14 ) and two red light-emitting chips ( 22 ), two green light-emitting chips ( 24 ) and a blue light-emitting chip ( 26 ) arranged on the base red, green, blue, green, red in a left-to-rig...
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7449721 |
To provide a high throughput film deposition means for film depositing an organic EL material made of polymer accurately and without any positional shift. A pixel portion is divided into a plurality of pixel rows by a bank, and a head po...
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7446343 |
A phosphor converted light emitting device includes a semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region, the light emitting layer being configured to emit light having a first...
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7446014 |
A method is provided for forming a NanoElectroChemical (NEC) cell. The method provides a bottom electrode with a top surface. Nanowire shells are formed. Each nanowire shell has a nanowire and a sleeve, with the nanowire connected to the...
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7443678 |
A novel flexible circuit board with heat dissipation ability is provided. The flexible circuit board includes a heat sink and a heat spreader having at least one circuit substrate mounted thereon. The heat spreader has a first lower surf...
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7442955 |
Display devices such as EL elements or LED elements, are formed from thin film elements having banks of prescribed height and a thin film layer formed by an ink jet method in areas to be coated that are partitioned by those banks. The ba...
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7442950 |
The invention has a monitoring portion which detects change of ambient temperature and degradation with time, provided with a plurality of monitoring pixels and a monitoring line. Each of the plurality of monitoring pixels has a light em...
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7439549 |
An LED module has a carrier, which contains a semiconductor layer and has a planar main area, on which LED semiconductor bodies are applied. Use is preferably made of LED semiconductor bodies which emit light of differing central wavelen...
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7439089 |
In a liquid crystal display device substrate, an insulating layer covers a thin film transistor. Another insulating layer covers a black matrix, which is formed on the insulating layer and covers the thin film transistor, a gate line, an...
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7436001 |
A vertical GaN-based LED and a method of manufacturing the same are provided. The vertical GaN-based LED includes an n-electrode, a first n-type GaN layer, a first AlGaN layer, a GaN layer, a second AlGaN layer, a second n-type GaN layer...
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7435996 |
A nanowire light emitting device and a method of fabricating the same are provided. The nanowire light emitting device includes a first conductive layer formed on a substrate, a plurality of nanowires vertically formed on the first condu...
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7432569 |
The invention includes a method of fabricating a gate structure for a field effect transistor and the gate structure. The method includes providing a crystalline silicon substrate and epitaxially growing a gate insulating layer of crysta...
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7432529 |
The purpose of the invention is to improve reliability of a light emitting apparatus comprising a TFT and organic light emitting elements.
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7427799 |
A CMOS image sensor and a method for fabricating the same is disclosed, to enhance the image-sensing efficiency by forming a concave lens area for improving the light-condensing efficiency in a planarization layer formed before a micro-l...
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7427783 |
An organic light emitting diode (OLED) display. The OLED display includes: a lower electrode formed on a layer on an insulating substrate having a thin film transistor. The lower electrode is electrically connected to the thin film trans...
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7427782 |
A method of making a light active sheet. A bottom substrate having an electrically conductive surface is provided. A hotmelt adhesive sheet is provided. Light active semiconductor elements, such as LED die, are embedded in the hotmelt ad...
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7425730 |
In an organic electro-luminescent display, a pixel circuit is disposed in a unit pixel region defined on a substrate. A passivation layer covers the entire unit pixel region including the pixel circuit. An organic light emitting diode (â...
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7423293 |
A method of manufacturing a high quality light emitting device is provided, in which light emitting elements having long life are manufactured by using light emitting elements having a structure that deteriorates less easily than convent...
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7420235 |
In the solid-state imaging device of the present invention having a photoelectric conversion section and a charge transfer section equipped with a charge transfer electrode for transferring an electric charge generated in the photoelectr...
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7420212 |
A flat panel display and method for fabricating the same are disclosed. The flat panel display includes a substrate. Signal lines are arranged on the substrate in a matrix shape, and a unit pixel region defined by crossing arrangement of...
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7420210 |
A light emitting device having high definition, a high aperture ratio, and high reliability is provided. The present invention achieves high definition and a high aperture ratio with a full color flat panel display using red, green, and ...
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7417260 |
A light emitting device includes: a first LED that emits a first primary light in a first primary wavelength range when activated; a second LED that emits a second primary light in a second primary wavelength range when activated, the se...
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7417259 |
A light-emitting device operating on a high drive voltage and a small drive current. LEDs ( 1 ) are two-dimensionally formed on an insulating substrate ( 10 ) of e.g., sapphire monolithically and connected in series to form an LED array....
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7405432 |
The present invention provides a highly controllable device for exposure from the back side and an exposure method, and also provides a method of manufacturing a semiconductor device using the same. The present invention involves exposur...
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7402836 |
In an active matrix type light emitting device, an upper surface injection type light emitting device in which an anode formed on the upper portion of the organic compound layer becomes an electrode for taking out the light is provided. ...
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7400004 |
Regions of an integrated circuit are isolated by a structure that includes at least one isolating trench on the periphery of an active area. The trench is deep, extending at least about 0.5 μm into the substrate. The isolating structure...
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7399994 |
A transparent electrode for use in a gallium nitride-based compound semiconductor light-emitting device having an emission wavelength of 440 nm or less, includes a metal layer disposed in contiguity to a p-type semiconductor layer and a ...
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7399993 |
A display unit and method of fabricating same are provided. The display unit includes a plurality of organic electroluminescent devices, each including an organic layer portion including at least a hole-transport layer and a luminescent ...
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7397068 |
A light assembly for use with a low voltage power source. The light assembly semiconductor photo-emitters are electrically in series with a higher forward voltage drop than the associated low voltage power supply. To provide the necessar...
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7397067 |
Some embodiments provide a microdisplay integrated circuit (IC), a substantially transparent protective cover coupled to the microdisplay IC, and a base coupled to the microdisplay IC. Thermal expansion characteristics of the base may be...
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7394105 |
There is provided an active matrix display including pixels arrayed in a matrix form and each including a display element and a thin film transistor. In each of columns which the pixels form, the pixels are divided into a first pixel gro...
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7393598 |
Light emitting molecules and organic light emitting devices comprising such light emitting molecules are described. In one embodiment, a light emitting molecule comprises an anchoring group and a charge transport group having a first end...
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7390129 |
A light source that has a small size can provide uniform light at high efficiency and can have a high degree of freedom in design, a method for manufacturing this light source, and a projector having this light source include a solid-sta...
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7385223 |
A flat panel display is provided. The flat panel display includes a light emitting device and two or more thin film transistors (TFTs) having semiconductor active layers having channel regions, where the thickness of the channel regions ...
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7378686 |
The invention is an illumination system that incorporates a light emitting diode and a side-emitting light-recycling lens. The side-emitting light-recycling lens recycles part of the light internally generated by a light emitting diode b...
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7372430 |
A light emitting device including a plurality of pieces of LEDs D 01, D 02 to D 16 , one or more driving circuit(s) for supplying the plurality of LEDs D 01 , D 02 to D 16 with electrical power, the number of the driving circuit(s) b...
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7372066 |
A light-emitting element using GaN. On a substrate ( 10 ), formed are an SiN buffer layer ( 12 ), a GaN buffer layer ( 14 ), an undoped GaN layer ( 16 ), an Si-doped n-GaN layer ( 18 ), an SLS layer ( 20 ), an undoped GaN layer ( 22 ), a...
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