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Document	Document Title
7470925	Magnetic body, magnetic device using the same, and method of manufacturing the same A magnetic body composed of non-magnetic material, includes a plurality of localized electron regions in each of which at least one electron is confined to form a localized spin, a barrier potential region having a higher energy than a F...
7465953	Positioning of nanoparticles and fabrication of single election devices The present invention includes single electron structures and devices comprising a substrate having an upper surface, one or more dielectric layers formed on the upper surface of the substrate and having at least one exposed portion, at ...
7456422	Semiconductor device A semiconductor device including quantum dots comprises a barrier layer of a semiconductor crystal having a first lattice constant and a quantum dot layer including a plurality of quantum dots of a semiconductor crystal having a second l...
7435670	Bit line barrier metal layer for semiconductor device and process for preparing the same The present invention relates to a bit line barrier metal layer for a semiconductor device and a process for preparing the same, the process comprising: forming bit line contact on an insulation layer vapor-deposited on an upper part of ...
7432550	Semiconductor structure including mixed rare earth oxide formed on silicon A method (and resultant structure) of forming a semiconductor structure, includes forming a mixed rare earth oxide on silicon. The mixed rare earth oxide is lattice-matched to silicon.
7427771	Universal gates for ising TQFT via time-tilted interferometry Experiments suggest that the mathematically weakest non-abelian TQFT may be physically the most robust. Such TQFT's—the v=5/2 FQHE state in particular—have discrete braid group representations, so one cannot build a universal quantum...
7420261	Bulk nitride mono-crystal including substrate for epitaxy The invention relates to a substrate for epitaxy, especially for preparation of nitride semiconductor layers. Invention covers a bulk nitride mono-crystal characterized in that it is a mono-crystal of gallium nitride and its cross-sectio...
7417227	Scanning interference electron microscope The conventional detection technique has the following problems in detecting interference fringes: (1) Setting and adjustment are complex and difficult to conduct; (2) A phase image and an amplitude image cannot be displayed simultaneous...
7414294	Intermediate-band photosensitive device with quantum dots having tunneling barrier embedded in organic matrix A plurality of quantum dots each have a shell. The quantum dots are embedded in an organic matrix. At least the quantum dots and the organic matrix are photoconductive semiconductors. The shell of each quantum dot is arranged as a tunnel...
7394092	Quasi-particle interferometry for logical gates A quantum computer can only function stably if it can execute gates with extreme accuracy. “Topological protection” is a road to such accuracies. Quasi-particle interferometry is a tool for constructing topologically protected gates....
7378870	Programmable crossbar signal processor with rectification layer A device includes a rectifying layer having a first side and a second side, a first array of wires formed above the first side of the rectifying layer, and a second array of wires formed below the second side of the rectifying layer.
7375368	Superlattice for fabricating nanowires This disclosure relates to a system and method for creating nanowires. A nanowire can be created by exposing layers of material in a superlattice and dissolving and transferring material from edges of the exposed layers onto a substrate....
7374613	Single crystal material having high density dislocations arranged one-dimensionally in straight line form, functional device using said single crystal material, and method for their preparation Disclosed is a ceramic or metal single-crystal material having high-density dislocations arranged one-dimensionally on respective straight lines. The single-crystal material is produced by compressing a ceramic or metal single-crystal bl...
7355261	Thin film device, thin film device module, and method of forming thin film device module A thin film device includes a thin film element disposed on a surface of a substrate for high voltage formed of a material having an electric resistivity in the range of 10 8 Ω·cm to 10 10 Ω·cm, with an adhesive layer in between. T...
7348591	Switch element, memory element and magnetoresistive effect element A switch element includes a substrate; a plurality of carbon nanotubes provided upright on the substrate; magnetic particles arranged at tip ends of the carbon nanotubes respectively; and a plurality of conductive layers formed between b...
7348589	Low power consumption magnetic memory and magnetic information recording device A highly integrated magnetic memory with low power consumption is provided. A first element portion which has a free layer, a first pinned layer formed in the film thickness direction of the free layer, and an insulation barrier layer fo...
7345296	Nanotube transistor and rectifying devices Single-walled carbon nanotube transistor and rectifying devices, and associated methods of making such devices include a porous structure for the single-walled carbon nanotubes. The porous structure may be anodized aluminum oxide or anot...
7332738	Quantum phase-charge coupled device A method for reading out the state of a mesoscopic phase device. In the method the mesoscopic phase device is coherently coupled to a mesoscopic charge device using a phase shift device and the quantum state of the mesoscopic charge devi...
7323709	Method for increasing efficiency of thermotunnel devices The present invention comprises a tunneling device in which the collector electrode is modified so that tunneling of higher energy electrons from the emitter electrode to the collector electrode is enhanced. In one embodiment, the collec...
7321131	Universal gates for ising TQFT via time-tilted interferometry Experiments suggest that the mathematically weakest non-abelian TQFT may be physically the most robust. Such TQFT's—the ν=5/2 FQHE state in particular—have discrete braid group representations, so one cannot build a universal quantu...
7317202	Method for manufacture of an epitaxial structural element layer sequence and optoelectronic semiconductor chip A technique for fabricating an epitaxial component layer sequence based on a first III/V compound semiconductor material system with a first group V element on a substrate or a buffer layer, which comprises a material based on a second I...
7310623	Games using pair-wise entanglements A quantum approach to the economically significant n-player public goods or similar n-player game requires only two-particle entanglement and is thus much easier to implement than games requiring n-particle entanglements. Two-particle en...
7307272	Nanotube based multi-level memory structure A network of electronic devices is provided. The network comprises an organized matrix of armchair nanotubes and zigzag nanotubes.
7301199	Nanoscale wires and related devices The present invention relates generally to sub-microelectronic circuitry, and more particularly to nanometer-scale articles, including nanoscale wires which can be selectively doped at various locations and at various levels. In some cas...
7301183	Organic field-effect transistor and method of making same based on polymerizable self-assembled monolayers An organic field-effect transistor and a method of making the same include a self-assembled monolayer (SAM) of bifunctional molecules disposed between a pair of electrodes as a channel material. The pair of electrodes and the SAM of bifu...
7282731	Quantum supermemory A quantum supermemory is based on the cells of nanostructured material. The nanostructured material includes consists of clusters with tunnel-transparent coatings. The clusters have sizes at which resonant electron features are manifeste...
7276725	Bit line barrier metal layer for semiconductor device and process for preparing the same The present invention relates to a bit line barrier metal layer for a semiconductor device and a process for preparing the same, the process comprising: forming bit line contact on an insulation layer vapor-deposited on an upper part of ...
7276432	Fiber incorporating quantum dots as programmable dopants A programmable dopant fiber includes a plurality of quantum structures formed on a fiber-shaped substrate, wherein the substrate includes one or more energy-carrying control paths, which pass energy to quantum structures. Quantum structu...
7262991	Nanotube- and nanocrystal-based non-volatile memory An embodiment is a transistor for non-volatile memory that combines nanocrystal and nanotube paradigm shifts. In particular an embodiment is a transistor-based non-volatile memory element that utilizes a carbon nanotube channel region an...
7250624	Quasi-particle interferometry for logical gates A quantum computer can only function stably if it can execute gates with extreme accuracy. “Topological protection” is a road to such accuracies. Quasi-particle interferometry is a tool for constructing topologically protected gates....
7244637	Chip on board and heat sink attachment methods A process for forming a thermally enhanced Chip On Board semiconductor device with a heat sink is described. In one aspect, a thermally conductive-filled gel elastomer or a silicon elastomeric material or elastomeric material, if the mat...
7236066	Film bulk acoustic resonator and filter circuit including a plurality of film bulk acoustic resonators A film bulk acoustic resonator includes a first electrode, a piezoelectric film disposed on the first electrode, a second electrode disposed on the piezoelectric film or disposed above the piezoelectric film, and an additional film dispo...
7235129	Substrate having a zinc oxide nanowire array normal to its surface and fabrication method thereof A method for forming an array of zinc oxide nanowires on a substrate is disclosed, which includes forming a crystal phase adjusting buffer on the surface of the substrate and growing 1D zinc oxide nanowires on the buffer by zinc vapor de...
7233041	Large-area nanoenabled macroelectronic substrates and uses therefor A method and apparatus for an electronic substrate having a plurality of semiconductor devices is described. A thin film of nanowires is formed on a substrate. The thin film of nanowires is formed to have a sufficient density of nanowire...
7227173	Semiconductor devices and methods A method of forming a semiconductor device includes the following steps: providing a plurality of semiconductor layers; providing means for coupling signals to and/or from layers of the device; providing a quantum well disposed between a...
7223993	Optical semiconductor device In the semiconductor laser or electro-absorption optical modulator that includes strained quantum well layers as active layers, making laser characteristics or modulator characteristics adequate has seen the respective limits since band ...
7217946	Method for making a wire nanostructure in a semiconductor film This invention relates to a process for manufacturing nanowire structures, the process comprising the following steps: manufacture of a thin semiconductor film ( 1 ) extending between a first terminal ( 4 ) and a second terminal (...
7202494	FINFET including a superlattice A semiconductor device may include at least one fin field-effect transistor (FINFET) comprising a fin, source and drain regions adjacent opposite ends of the fin, and a gate overlying the fin. The fin may include at least one superlattic...
7192533	Method of manufacturing nanowires and electronic device In the method, semiconductor substrates are etched to provide nanowires, said substrates comprising a first layer of a first material and a second layer of a second material with a mutual interface, which first and second materials are d...
7186380	Transistor and sensors made from molecular materials with electric dipoles A polarization-dependent device is provided that includes organic materials having electric dipoles. The polarization-dependent device comprises: (a) a source region and a drain region separated by a channel region having a length L, for...
7180107	Method of fabricating a tunneling nanotube field effect transistor A method of fabricating a tunneling nanotube field effect transistor includes forming in a nanotube an n-doped region and a p-doped region which are separated by an undoped channel region of the transistor. Electrical contacts are provid...
7180087	Spin filter and a memory using such a spin filter A spin filtering device has: a spin filter ( 1 ) having an input region ( 3 ) for carrying an electron current, an output region ( 4 ) for carrying an electron current, and a three-dimensionally confined quantum region ( 2 a ) arranged t...
7176480	Light-emitting semiconductor device having a quantum well active layer, and method of fabrication A light-emitting diode has a low-resistivity silicon substrate on which there are laminated a buffer layer, an n-type lower confining layer, an active layer of multiple quantum well configuration, and a p-type upper confining layer. The ...
7176478	Nanotube-based vacuum devices New, hybrid vacuum electron devices are proposed, in which the electrons are extracted from the nanotube into vacuum. Each nanotube is either placed on the cathode electrode individually or grown normally to the cathode plane. Arrays of ...
7161201	Antiferromagnetically stabilized pseudo spin valve for memory applications The invention relates to improving the switching reliability of a magnetic memory cell in a magnetic random access memory (MRAM). Embodiments of the invention add an antiferromagnet to a magnetic memory cell. An antiferromagnetic layer c...
7161168	Superlattice nanopatterning of wires and complex patterns Fabrication of metallic or non-metallic wires with nanometer widths and nanometer separation distances without the use of lithography. Wires are created in a two-step process involving forming the wires at the desired dimensions and tran...
7153763	Method for making a semiconductor device including band-engineered superlattice using intermediate annealing A method for making a semiconductor device may include forming a superlattice including a plurality of stacked groups of layers, with each group of layers comprising a plurality of stacked base semiconductor monolayers defining a base se...
7141807	Nanowire capillaries for mass spectrometry A capillary for a mass spectrometry system is described. The capillary comprises a channel and a tip, and at least one of the channel and the tip comprises a nanowire material.
7138651	Logic apparatus and logic circuit A logic apparatus comprises a first single-electron device formed of a first conductive island, two first tunnel barriers with the first conductive island interposed, first and second electrodes, and a first charge storage region, and a ...
7135728	Large-area nanoenabled macroelectronic substrates and uses therefor A method and apparatus for an electronic substrate having a plurality of semiconductor devices is described. A thin film of nanowires is formed on a substrate. The thin film of nanowires is formed to have a sufficient density of nanowire...

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