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7473939 |
A light-emitting diode structure with transparent window covering layer of multiple films includes one (or several) first transparent covering layer(s) and one (or several) second covering layer(s), which are formed on the outside of the...
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7473935 |
A white-light emitting semiconductor device includes a first light-emitting die, a second light-emitting die, a photostimulable luminescent substance, and a holding assembly. The first light-emitting die emits a first radiation having a ...
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7470938 |
In a nitride semiconductor light emitting device having patterns formed on the upper and lower surfaces of a substrate from which light is emitted in a flip chip bonding structure, the patterns are capable of changing light inclination a...
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7435994 |
A spacer layer is formed on a single-crystal substrate and an epitaxially grown layer composed of a group III-V compound semiconductor layer containing a nitride or the like is further formed on the spacer layer. The epitaxially grown la...
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7420204 |
An organic transistor is capable of emitting light at high luminescence efficiency, operating at high speed, handling large electric power, and can be manufactured at low cost. The organic transistor includes an organic semiconductor lay...
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7388230 |
A selective colored LED includes a light emitting area epitaxially grown on a first cladding layer, and a second cladding layer epitaxially grown on the light emitting area. The light emitting area includes at least one thin single cryst...
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7352006 |
The invention is a light emitting diode that exhibits high reflectivity to incident light and high extraction efficiency for internally generated light. The light emitting diode includes a reflecting layer that reflects both the incident...
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7323721 |
A monolithic, multi-color semiconductor light emitting diode (LED) is formed with a multi-bandgap, multi-quantum well (MQW) active light emitting region which emits light at spaced-apart wavelength bands or regions ranging from UV to red...
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7321191 |
There is provided a blue-green illumination system, including a semiconductor light emitter, and a luminescent material, wherein the system has an emission with CIE color coordinates located within an area of a of a pentagon on a CIE chr...
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7321132 |
A multi-layer structure for use in the fabrication of integrated circuit devices is adapted for the formation of enhancement mode high electron mobility transistors, depletion mode high electron mobility transistors, and power high elect...
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7319248 |
The present invention discloses a high brightness light emitting diode. The light emitting diode primarily includes a permanent substrate, a reflective mirror formed on said permanent substrate, an n-type cladding layer formed on said re...
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7271423 |
A semiconductor light-emitting device has a semiconductor light-emitting element for emitting light with emission wavelengths of 390 to 420 nm, wherein the wavelengths of light from the semiconductor light-emitting element are converted ...
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7271420 |
A light emitting diode chip with red, green and blue light emission regions on a single substrate. The light emission regions may be powered selectively to only emit one color light at a time. Or all three regions may be powered simultan...
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7259398 |
A semiconductor light emitting apparatus is proposed, which has thyristor without increasing number of constituent semiconductor layers, with large degree of freedom of selection of ON voltage. It comprises first-conductivity-type first ...
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7224001 |
A semiconductor light source for illuminating a physical space has been invented. In various embodiments of the invention, a semiconductor such as and LED chip, laser chip, LED chip array, laser array, an array of chips, or a VCSEL chip ...
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7208752 |
A structure of a gallium nitride light emitting diode has a transparent conductive window layer including a diffusion barrier layer, an ohmic contact layer, and a window layer. By using the added domain contact layer, the diffusion barri...
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7202506 |
A light emitting diode (LED) grown on a substrate doped with one or more rare earth or transition element. The dopant ions absorb some or all of the light from the LED's active layer, pumping the electrons on the dopant ion to a higher e...
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7199401 |
An LED includes a semiconductor region having an active layer sandwiched between two confining layers of opposite conductivity types for generating heat. A cathode is arranged centrally on one of the opposite major surfaces of the semico...
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7190076 |
A GaN layer is formed on a sapphire substrate through an AlN buffer layer and doped with Mg to prepare a laminate (referred to as “GaN substrate”). A metal (Pt and Ni) electrode 50 nm thick is formed on the GaN substrate by (1) vapor...
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7187011 |
The invention relates to a light source comprising a light-emitting element, which emits light in a first spectral region, and comprising a luminophore, which comes from the group of alkaline-earth orthosilicates and which absorbs a port...
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7154121 |
A light emitting device includes a micro-reflection structure carrier, which is formed by performing etching process on a carrier, a reflection layer, a light emitting layer, and a transparent adhesive layer, wherein the reflection layer...
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7151281 |
A light-emitting diode (LED) structure with electrostatic discharge (ESD) protection is described. The LED includes a substrate, a patterned semiconductor layer, a first electrode and a second electrode. The patterned semiconductor layer...
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7148514 |
The invention relates to a nitride semiconductor LED and a fabrication method thereof. In the LED, a first nitride semiconductor layer, an active region a second nitride semiconductor layer of a light emitting structure are formed in the...
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7135698 |
A multi-spectral super-pixel photodetector for detecting four or more different bands of infrared radiation is described. The super-pixel photodetector includes two or more sub-pixel photodetectors, each of which includes a diffractive r...
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7122844 |
A susceptor for holding semiconductor wafers in an MOCVD reactor during growth of epitaxial layers on the wafers is disclosed. The susceptor comprises a base structure made of a material having low thermal conductivity at high temperatur...
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7105860 |
A flip chip light-emitting diode package comprising a Schottky diode group, a light-emitting diode and a plurality of bumps is provided. The Schottky diode group comprises a plurality of Schottky diodes electrically coupled in series or ...
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7095052 |
The efficiency of LEDs is increased by incorporating multiple active in series separated by tunnel junction diodes. This also allows the LEDs to operate at longer wavelengths.
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7091525 |
A display device is formed by burying at least part of a light emitting device in an insulating material, wherein a drive electrode for the light emitting device is formed so as to be extracted on a surface of the insulating material. A ...
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7064354 |
A color mixing light emitting diode (LED) is disclosed. The present invention is featured in that a plurality of LEDs emitting different colors of light can be electrically connected in series and/or in parallel by using chip manufacturi...
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6998284 |
A method of forming a semiconductor device having a quantum well structure, comprises the steps of: (a) forming a well film at a first temperature, the well film being made of a III-V nitride semiconductor containing nitrogen, indium and...
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6982523 |
As a red light emitting phosphor capable of efficiently emitting red light at a high luminance in response to exciting light having a wavelength of 350-420 nm, and practically used in a light emitting device for red display or a light em...
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6970490 |
When the density of excitons in an organic single crystal (including the linear acenes, polyacenes, and thiophenes) approaches the density of molecular sites, an electron-hole plasma may form in the material altering the overall excitoni...
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6930331 |
An organic light emitting diode device includes an array layer having a plurality of thin film transistors, an organic light emitting diode formed on a second substrate, a plurality of connection patterns disposed between the first and s...
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6927426 |
A semiconductor light-emitting device of this invention includes at least a first cladding layer formed on a substrate, a light-emitting structure including an active layer made of In 1−X−Y Ga X Al Y N (0≦X, Y≦1, 0≦X+Y<1) an...
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6876006 |
A radiation source ( 30 ) is provided comprising a first active layer ( 42 ) coupled to a second active layer ( 62 ), wherein the first active layer ( 42 ) produces primary radiation of frequency v 1 by appropriate stimulation, and the ...
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6864502 |
A III group nitride system compound semiconductor light emitting element has a quantum well structure that includes a well layer of Al X1 Ga Y1 In 1-X1-Y1 N, where 0<X1, 0≦Y1 and X1+Y1<1 and a barrier layer of Al X2 Ga Y2 In 1-X2...
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6841860 |
Disclosed are a flip-chip bonding structure for improving the vertical alignment of an optical device relative to a PLC and a flip-chip bonding method for achieving this structure. The flip-chip bonding structure includes: a semiconducto...
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6838706 |
In a group III nitride compound semiconductor light-emitting device, a light-emitting layer having a portion where an InGaN layer is interposed between AlGaN layers on both sides thereof is employed. By controlling the thickness, growth ...
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6830831 |
There is provided a light emitter for a display comprising a photoalignment layer; and photoaligned on said photoalignment layer, a light emitting polymer. Also provided are methods for forming the light emitter and the use of the light ...
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6812498 |
Disclosed herein is a multi-color light emitting diode package. The multi-color light emitting diode package mounted thereon with at least three light emitting diodes comprises a substrate formed at the upper surface thereof with a patte...
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6809347 |
The invention relates to a light source comprising a light-emitting element, which emits light in a first spectral region, and comprising a luminophore, which comes from the group of alkaline-earth orthosilicates and which absorbs a port...
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6804121 |
A housing for biometric sensor chips and a method for producing such a housing includes a freely accessible fingerprint checking area on a sensor chip, a mount substrate with contact outer surfaces thereon, the mount substrate being a mo...
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6781157 |
A LED monolithic array type like emitting device which has a plurality of light emitting parts. The device is particularly suitable as a light source for printers. Each light emitting part has a light emitting diode having a laminate str...
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6746894 |
A semiconductor device package interposer including a receptacle extending substantially therethrough. Methods for assembling the interposer with one or more semiconductor devices are also disclosed. A film may be secured to a bottom sur...
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6738175 |
To enhance the emission output of the light emitting device including an active layer made of nitride semiconductor containing In, the light emitting device having an active layer between the n-type semiconductor layer and the p-type sem...
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6730937 |
A full-color LED display includes red, green and blue LED elements. A first substrate is used to form red and green LED elements which are then covered by a first passivation layer. A second substrate is bonded to the passviation layer a...
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6683326 |
The present invention relates to a high-sensitivity top-electrode and bottom-illuminated type photodiode. The device consists of a highly doped buffer layer, a photo-detecting layer on a semi-insulating substrate. An electrode is formed ...
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6677617 |
This invention provides a light-emitting diode which is capable of extracting white light, manufactured readily and highly reliable. The light-emitting diode is fabricated by laminating a buffer layer 2 , an Si (silicon)-doped GaN fluor...
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6639249 |
A multi-color, solid-state lighting device includes a stack of two or more panels, each panel having an array of light emitting semiconductor components formed thereon. To form the light emitting components, high quality epitaxial layers...
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6630690 |
An optoelectronic device with a Group III Nitride active layer is disclosed that comprises a silicon carbide substrate; an optoelectronic diode with a Group III nitride active layer; a buffer structure selected from the group consisting ...
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