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7470938 |
In a nitride semiconductor light emitting device having patterns formed on the upper and lower surfaces of a substrate from which light is emitted in a flip chip bonding structure, the patterns are capable of changing light inclination a...
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7462879 |
A display device is formed by burying at least part of a light emitting device in an insulating material, wherein a drive electrode for the light emitting device is formed so as to be extracted on a surface of the insulating material. A ...
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7462874 |
A silicon-based light emitting structure is formed as a high density array of light-emitting p-n junctions that substantially increases the intensity of the light emitted in a planar region. The p-n junctions are formed using standard CM...
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7462869 |
A first semiconductor light emitting device includes: a transparent substrate; a light emitting layer; and a roughened region. The transparent substrate has a first major surface and a second major surface, and is translucent to light in...
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7462868 |
An LED chip with double close-loop electrode design includes a substrate, a first-type doped semiconductor layer, a light emitting layer, a second-type doped semiconductor layer, a first electrode and a second electrode. The first-type d...
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7459728 |
Disclosed are a semiconductor light emitting device capable of enhancing a light emergence efficiency at a lower light emergence plane of the device by forming an electrode on a halfway area of a tilt crystal plane and a fabrication meth...
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7453098 |
A vertical electrode structure of GaN-based light emitting diode discloses an oxide window layer constructing the GaN-based light emitting diode of vertical electrode structure, which effectively decreases the Fresnel reflection loss and...
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7446336 |
It is an object of the present invention to provide a high reliable EL display device and a manufacturing method thereof by shielding intruding moisture or oxygen which is a factor of deteriorating the property of an EL element without e...
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7439550 |
A semiconductor light emitting device can be configured to prevent diffusion migration of components constituting a linear electrode. The semiconductor light emitting device can include a substrate, at least one semiconductor layer forme...
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7439091 |
A light-emitting diode (LED) and a method for manufacturing the same are described. The method for manufacturing the LED comprises the following steps. An illuminant epitaxial structure is provided, in which the illuminant epitaxial stru...
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7432533 |
An encapsulation for a device is disclosed. Spacer particles are randomly located in the device region to prevent a cap mounted on the substrate from contacting the active components, thereby protecting them from damage. The spacer parti...
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7429755 |
A high power LED comprises a substrate. An N-type semiconductor layer, an active layer and a P-type semiconductor layer are sequentially deposited on the substrate. A semi-insulator layer or a non-N-type semiconductor layer can be interp...
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7427799 |
A CMOS image sensor and a method for fabricating the same is disclosed, to enhance the image-sensing efficiency by forming a concave lens area for improving the light-condensing efficiency in a planarization layer formed before a micro-l...
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7420271 |
A heat conductivity and brightness enhancing structure for light-emitting diode, including a bracket having a cathode leg support. A bowl structure is formed on upper end of the cathode leg support for resting a light-emitting chip there...
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7411220 |
A semiconductor light emitting device can have stable electric characteristics and can emit light with high intensity from a substrate surface. The device can include a transparent substrate and a semiconductor layer on the substrate. Th...
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7408202 |
Solid state devices, such as solid state light emitting devices, having non-linear current spreading segments are disclosed. Projection subsystems and systems equipped with such solid state light emitting devices are also disclosed.
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7408200 |
A thin film transistor array panel is provided, which includes: a substrate; a first signal line formed on the substrate; a second signal line formed on the substrate and intersecting the first signal line; a thin film transistor includi...
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7402837 |
Methods of fabricating light emitting diodes and light emitting devices are provided that include a substrate, an n-type epitaxial region on the substrate and a p-type epitaxial region on the n-type epitaxial region. At least a portion o...
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7385226 |
A light-emitting device includes a substrate, a first nitride semiconductor stack formed on the substrate, a nitride light-emitting layer formed on the first nitride semiconductor stack, a second nitride semiconductor stack formed on the...
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7365368 |
To simplify the burn-in process and reduce its cost for a surface-emitting type wafer and its manufacturing method, and for a burn-in method for a surface-emitting type wafer. A surface-emitting type wafer includes a substrate 10 and a...
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7364371 |
An optical module has plural optical units each having an optical communication device that performs conversion between an electrical signal and an optical signal, and a socket that the optical communication device is fitted in. The opti...
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7355212 |
An InGaN active layer is formed on a sapphire substrate. A p-side electrode is formed on the InGaN active layer to supply an electric current to this InGaN active layer. The p-side electrode includes {circle around (1)} an Ni layer for f...
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7355210 |
A high-efficiency light-emitting element includes a substrate, a first nitride semiconductor layer formed on the substrate, a nitride light-emitting layer formed on the first nitride semiconductor layer, and a second nitride semiconducto...
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7342251 |
An object of the invention is to reduce the manufacturing cost of EL display devices and electronic devices incorporating the EL display devices. An EL material is formed by printing in an active matrix EL display device. Relief printing...
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7341879 |
A point source light emitting-diode (LED) comprises a substrate, an epitaxy structure, a first electrode, an isolation layer, a bonding layer, a contact layer, and a connection bridge. The epitaxy structure is located on the substrate, a...
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7335924 |
An LED structure is disclosed herein, which comprises, sequentially arranged in the following order, a light generating structure, a non-alloy ohmic contact layer, a metallic layer, and a substrate. As a reflecting mirror, the metallic l...
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7335923 |
An electroluminescence display device that includes a thin film transistor layer formed on a substrate, at least one insulating layer formed on the thin film transistor layer, and a pixel layer, disposed on the insulating layer and inclu...
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7335916 |
A semiconductor light emitting device comprising: a transparent substrate; an electron injection layer of N-type GaN-based semiconductor; an active layer on the electron injection layer; a hole injection layer of P-type GaN-based semicon...
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7326967 |
The present invention is related to a light emitting diode of an omnidirectional reflector providing with a transparent conductive layer. In the present invention, a cohesion layer is formed between a transparent layer and a metal reflec...
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7307278 |
A device includes a plurality of organic electronic devices disposed on a substrate, wherein each of the plurality of organic electronic devices comprises a first electrode and a second electrode, and wherein each of the plurality of org...
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7291863 |
A LED structure including an epitaxy substrate, a semiconductor layer, a first bonding pad and a second bonding pad, is provided. The epitaxy substrate has a through hole and the semiconductor layer is disposed on the epitaxy substrate. ...
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7291506 |
A method of manufacturing a magnetic memory device includes forming an insulation layer on a substrate, forming a lower electrode on the insulation layer, forming a magneto-resistive film on an upper surface of the lower electrode, the m...
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7285803 |
A notch portion 7 A is disposed on a formation surface of a wiring pattern 7 and is located in a contact point with a wiring pattern 9 of an outside substrate 8 , so that a solder 9 a melted by reflow soldering slowly flows up al...
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7282746 |
A light emitting diode (LED) and a method are provided for fabricating the a LED with an improved structure for better light emitting efficiency and better light output performance. The LED includes an n-GaN layer formed on a substrate t...
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7276728 |
A vertical organic transistor comprises a substrate, a first electrode positioned over the substrate, a first semiconductor layer formed over the first electrode, a second electrode formed on the first semiconductor layer and shaped into...
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7274040 |
A light emitting device includes a substrate, a doped substrate layer, a layer of first conductivity type overlying the doped substrate layer, a light emitting layer overlying the layer of first conductivity type, and a layer of second c...
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7268416 |
A mounting structure includes a mounting substrate on which a plurality of mounting pads each constituting a portion of a conductive pattern extending in a Y direction are arranged in an X direction, the X direction and the Y direction b...
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7217947 |
A solid state light emitting device having a plurality of semiconductor finger members with side walls perpendicular to a substrate. Multiple quantum wells are formed on the side walls, and are also perpendicular to the substrate. Each m...
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7214967 |
Provided is an electroluminescent display device having a negligibly small voltage drop of a cathode, no external light reflection, and high contrast and luminance. The electroluminescent display device includes a rear substrate, a first...
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7214966 |
Provided is an electroluminescent display device having a negligibly small voltage drop of a cathode, no external light reflection, and high contrast and luminance. The electroluminescent display device includes a rear substrate, a first...
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7205578 |
This invention describes a radiation-emitting semiconductor component with the a multilayered structure ( 4 ) that contains a radiation-emitting active layer ( 5 ), and a window ( 1 ) transparent to radiation that has a first principal f...
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7202508 |
A liquid crystal device is provided that comprises a plurality of R colored layers, a plurality of G colored layers, and a plurality of B colored layers that are formed on either one of a pair of substrates and are aligned in a predeterm...
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7202507 |
An optical semiconductor device includes an optical semiconductor chip and a light permeable member covering the optical semiconductor chip. The light permeable member has a light emitting surface for emitting light coming out from the o...
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7193245 |
A high power, high luminous flux light emitting diode (LED) comprises a substrate, a light-emitting structure, a first electrode and a second electrode. The LED has a top surface layout design in which the first electrode has a number of...
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7154127 |
A semiconductor laminating portion including a light emitting layer forming portion having at least an n-type layer and a p-type layer is formed on a semiconductor substrate. A current blocking layer is partially formed on its surface. A...
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7154124 |
A nitride semiconductor light emitting device includes a substrate, an n-type nitride semiconductor layer formed on the substrate and provided with an electrode region of a predetermined area adjacent to a center of one lateral side of t...
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7151279 |
A thin film transistor array panel is provided, which includes: a substrate; a first signal line formed on the substrate; a second signal line formed on the substrate and intersecting the first signal line; a thin film transistor includi...
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7132694 |
An electro-optical device includes a pair of substrates including a first substrate and a second substrate, an electro-optical material sandwiched between the pair of substrates, a shading film having a predetermined pattern which is at ...
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7126159 |
A light emitting device includes a first patterned electrode 12 and a second patterned electrode 13 both of which are formed on a wiring board 11, an LED chip 19 mounted on the second patterned electrode 13, a metal wire 20 e...
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7119373 |
A non-lasing superluminescent light emitting diode (SLED) comprises a semiconductor heterostructure forming a PN junction and a waveguide defining an optical beam path. The heterostructure includes a gain region and an absorber region in...
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