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7470938 |
In a nitride semiconductor light emitting device having patterns formed on the upper and lower surfaces of a substrate from which light is emitted in a flip chip bonding structure, the patterns are capable of changing light inclination a...
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7372066 |
A light-emitting element using GaN. On a substrate ( 10 ), formed are an SiN buffer layer ( 12 ), a GaN buffer layer ( 14 ), an undoped GaN layer ( 16 ), an Si-doped n-GaN layer ( 18 ), an SLS layer ( 20 ), an undoped GaN layer ( 22 ), a...
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7321145 |
A nonvolatile memory cell with a charge storage structure is read by measuring current (such as band-to-band current) between the substrate region of the memory cell and at least one of the current carrying nodes of the memory cell. To e...
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7271421 |
A light-emitting diode array comprising a conductive layer formed on a substrate, pluralities of separate light-emitting portions formed on the conductive layer, a first groove formed in the conductive layer to divide the light-emitting ...
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7242029 |
A light emitting element array is made with large light emitting elements and small light emitting elements are arranged on a substrate in a matrix-like form. The large light emitting element has the luminescent area of about 1 mm square...
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7221006 |
A semiconductor device ( 101 ) is provided herein which comprises a substrate ( 103 ) comprising germanium. The substrate has source ( 107 ) and drain ( 109 ) regions defined therein. A barrier layer ( 111 ) comprising a first material t...
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7193322 |
A strained-silicon (Si) channel CMOS device shallow trench isolation (STI) oxide region, and method for forming same have been provided. The method forms a Si substrate with a relaxed-SiGe layer overlying the Si substrate, or a SiGe on i...
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7170152 |
A wafer level semiconductor package with a build-up layer is provided, which includes a glass frame having a through hole for receiving a semiconductor chip therein, a low-modulus buffer material filled within the space formed between th...
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7112825 |
A semiconductor laminating portion including a light emitting layer forming portion having at least an n-type layer and a p-type layer is formed on a semiconductor substrate. A current blocking layer is partially formed on its surface wh...
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7091525 |
A display device is formed by burying at least part of a light emitting device in an insulating material, wherein a drive electrode for the light emitting device is formed so as to be extracted on a surface of the insulating material. A ...
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7019331 |
An OLED device having green emitting regions disposed over a substrate, and wherein each green emitting region includes one or more light-emitting layer(s), a reflector and a semitransparent reflector respectively disposed on opposite si...
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6992333 |
A number of red LEDs, green LEDs, and blue LEDs are mounted on one surface of a polygonal flexible multilayer substrate. The LEDs are connected in series according to color. A red feeder terminal, a green feeder terminal, a blue feeder t...
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6891200 |
A number of red LEDs, green LEDs, and blue LEDs are mounted on one surface of a polygonal flexible multilayer substrate. The LEDs are connected in series according to color. A red feeder terminal, a green feeder terminal, a blue feeder t...
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6872966 |
There are provided first and second optical waveguides formed on a semiconductor substrate and having upper clad layers and core layers that are separated mutually respectively, first and second phase modulation electrodes formed on the ...
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6858875 |
A light-emitting-element array has a semiconductor layer formed on a current-blocking layer. Light-emitting elements are formed in the semiconductor layer by diffusion of an impurity of a different conductive type. An isolation trench di...
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6828595 |
A light shield apparatus and formation method for preventing the transmission of incident light towards active devices of the display. In one embodiment, the present invention recites forming a plurality of metal pixels wherein adjacent ...
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6822267 |
A signal transmission circuit, a CMOS semiconductor device, and a circuit board improve the signal transmission characteristic of a signal line having a large capacitance that is generated on the long signal line inside a large-scale int...
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6806506 |
A semiconductor device includes semiconductor elements, a housing for accommodating the semiconductor elements, a resin material arranged in the housing for enclosing the semiconductor elements, and leads connected to the semiconductor e...
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6791150 |
A thermoelectric semiconductor has a P-type semiconductor and an N-type semiconductor disposed in parallel. A heat absorbing side of the thermoelectric semiconductor and a substrate that has an optical element mounted on its upper surfac...
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6785311 |
An optical semiconductor device comprising: an active region; and a p-doped cladding region disposed on one side of the active region; wherein an electron-reflecting barrier is provided on the p-side of the active region for reflecting b...
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6765235 |
A semiconductor device has a substantially linear array of semiconductor blocks of one conductive type, each includes a diffusion region of the opposite conductive type and a electrode. The array is paralleled by an array of electrode pa...
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6753214 |
A PIN photodetector includes reduced parasitic capacitance and is suitable for high-speed applications. Metal interconnect leads are coupled to the photodetector and extend over electrically insulating regions which reduce or eliminate p...
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6746884 |
In a method of manufacturing matrix electron emitter arrays, each array comprising a plurality of scanning lines formed on a glass substrate and arranged in parallel with each other, a plurality of signal lines formed in a direction to c...
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6710376 |
This invention discloses the basic chip architecture and packing configuration required to build an all silicon opto-coupler in which a forward biased silicon PN junction diode is used as the LED. Construction of the LED and the detector...
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6479839 |
A method for fabricating p-type, i-type, and n-type III-V compound materials using HVPE techniques is provided. If desired, these materials can be grown directly onto the surface of a substrate without the inclusion of a low temperature ...
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6433367 |
A semiconductor device has a first surface with at least one wire bonding pad, a second surface located opposite to the first surface, and at least one side sloping inward from the first surface to the second surface. According to a firs...
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6429461 |
It is an object of the present invention to provide a surface light-emitting device that can realize a lightweight and compact-profile optical input/output device with reasonable price, especially the one that emits light. The beam gener...
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6417524 |
Light emitting diodes each comprising a body of semiconductor material having a first side surface, a second side surface, and a top surface; and a stripe of conductive material over the top surface of the body. The stripe has a first se...
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6211537 |
A 1200 dpi LED may be manufactured without highly accurate mask alignment and provide good light radiation efficiency. A first interlayer dielectric is formed on a semiconductor substrate and has a plurality of first windows formed there...
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5926375 |
A circuit board is provided with blind connection vias which are filled with solder. The end portions of the pins of an electronic component are inserted into the connection vias, and are connected to the connection vias by solder. The e...
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5757026 |
A multicolor organic light emitting device employs vertically stacked layers of double heterostructure devices which are fabricated from organic compounds. The vertical stacked structure is formed on a glass base having a transparent coa...
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5449926 |
A high density LED array with semiconductor interconnects includes a plurality of layers of material stacked on a substrate including a conductive layer, a first carrier confinement layer, an active layer, and a second carrier confinemen...
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5357123 |
A light emitting diode array has light emitting dots arranged in a line and is characterized in that a semiconductor substrate of a chip constituting the light emitting diode array has a Dovetail grooved mesa shape on a chip end face opp...
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5173759 |
In an optical printer head or image reading apparatus, light emitting diodes, photo detectors and other picture elements are formed, by a specified number of pieces individually, as picture element arrays, and these arrays are linearly a...
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4902641 |
A process for making an inverted silicon-on-insulator semiconductor device having a pedestal structure. After the processing of polysilicon layers, dielectric layers, an epitaxial region and a nitride layer, a second substrate is bonded ...
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4893169 |
A lead frame adapted for a plurality of semiconductor chips in which, for each semiconductor chip, at least one electric terminal is extended out of the package after encapsulation of the lead frame. In addition, a process for the produc...
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4396929 |
The substrate of a gallium nitride light-emitting diode is made rough at given positions on the surface thereof, or an insulating film strip pattern is attached on the surface of the substrate prior to growing an n-type conductive galliu...
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4275403 |
An electro-luminescent semiconductor device having a plurality of electro-luminescent integrated diodes is provided in the present invention to be individually optically isolated from one another. By this construction data display and op...
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RE30556 |
An indicating element comprises a base plate of P-type or N-type epitaxial crystals, a N-type or P-type indicating layer of diffusion or growth planarly formed on the base plate, and an electrode layer provided on the planar indicating l...
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4144635 |
A method of manufacturing an indicating element comprises forming an electrode on a rear surface of a semiconductor base plate, forming an N-type or P-type planar indicating layer on an upper surface of the base plate by means of diffusi...
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4071945 |
A method for manufacturing a semiconductor indicating instrument or display device employing a silicon carbide crystal having a first ohmic contact with an n-type region and at least one second ohmic contact with a p-type region. Another...
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4058750 |
A semiconductor indicating arrangement comprises a structured contact strip on which are mounted a plurality of luminescent semiconductor elements connected by one electrode to the contact strip and connected by their other electrode to ...
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4019196 |
An indicating element comprises a base plate of P-type or N-type epitaxial crystals, a N-type or P-type indicating layer of diffusion or growth planarly formed on the base plate, and an electrode layer provided on the planar indicating l...
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3999206 |
A semiconductor display of digital data device using a semiconductor crystal wherein the p-region has a thickness of 0.1-0.3 μm, the concentration of neutral atoms in the n-region is from 1.5×10 18 to 5×10 18 cm - 3 and the thickne...
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3997907 |
A light emitting gallium phosphide device comprising a gallium phosphide (GaP) substrate of one conductivity type and at least one GaP layer of the opposite conductivity type formed on said substrate so as to form a P-N junction, wherein...
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3900864 |
The specification describes a process for defining the active-display regions in a monolithic electroluminescent display device. According to the process, the emitting regions of a semiconductor chip are electrically and optically isolat...
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3899826 |
There is disclosed an integral light display comprising a matrix of light emitting diodes in an integral structure which is scannable to produce an alpha numeric character display. The light emitting diodes are arranged in a plurality of...
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3893149 |
There is disclosed a monolithic light display comprising a matrix of light emitting diodes in an integral structure which is scannable to produce an alpha numeric character display. Each of the light emitting diodes is electrically isola...
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3886581 |
A display device having a plurality of light-emitting semiconductor elements arranged on an electric insulation base plate in a prescribed pattern with the respective P-N junctions positioned perpendicular to the base plate, thereby disp...
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3840858 |
An alpha-numerical display device comprising a plurality of light emitting diodes mounted in a prearranged design on a surface of a transparent plate whose diode mounting surface side has formed thereon a plurality of conductive strips b...
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