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7470938 |
In a nitride semiconductor light emitting device having patterns formed on the upper and lower surfaces of a substrate from which light is emitted in a flip chip bonding structure, the patterns are capable of changing light inclination a...
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7453092 |
A light emitting device having: a predetermined optical form that is provided on a surface of an LED element mounted on a base, the predetermined optical form being made to allow an increase in efficiency of taken out light from an insid...
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7447492 |
An integrated circuit having voltage isolation capabilities includes a first area of the integrated circuit containing functional circuitry that is located in the substrate of the integrated circuit. A second area of the integrated circu...
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7436001 |
A vertical GaN-based LED and a method of manufacturing the same are provided. The vertical GaN-based LED includes an n-electrode, a first n-type GaN layer, a first AlGaN layer, a GaN layer, a second AlGaN layer, a second n-type GaN layer...
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7420235 |
In the solid-state imaging device of the present invention having a photoelectric conversion section and a charge transfer section equipped with a charge transfer electrode for transferring an electric charge generated in the photoelectr...
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7417256 |
It is an object of the present invention to prevent an influence of voltage drop due to wiring resistance, trouble in writing of a signal into a pixel, and trouble in gray scales, and provide a display device with higher definition, repr...
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7411221 |
A light emitting device having a monolithic protection element and a method of fabricating the light emitting device are provided. The light emitting device includes: a light emitter having a cathode and an anode; and the resistive prote...
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7400004 |
Regions of an integrated circuit are isolated by a structure that includes at least one isolating trench on the periphery of an active area. The trench is deep, extending at least about 0.5 μm into the substrate. The isolating structure...
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7368756 |
A method is provided for forming semiconductor devices using a semiconductor substrate having first and second opposed sides, and at least one device layer on the second side of the substrate, the at least one device layer including firs...
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7354812 |
Multiple trench depths within an integrated circuit device are formed by first forming trenches in a substrate to a first depth, but of varying widths. Formation of a dielectric layer can cause some of the trenches to fill or close off w...
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7279395 |
A pixel cell having a halogen-rich region localized between an oxide isolation region and a photosensor. The halogen-rich region prevents leakage from the isolation region into the photosensor, thereby suppressing dark current in imagers.
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7268416 |
A mounting structure includes a mounting substrate on which a plurality of mounting pads each constituting a portion of a conductive pattern extending in a Y direction are arranged in an X direction, the X direction and the Y direction b...
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7242029 |
A light emitting element array is made with large light emitting elements and small light emitting elements are arranged on a substrate in a matrix-like form. The large light emitting element has the luminescent area of about 1 mm square...
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7220999 |
An electro-optical device is provided that includes a protection layer formed on a first substrate leaving a region of the first substrate region exposed; a first electrode formed on the protection layer; a first inter-substrate conducti...
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7220998 |
The main object of the present invention is to provide a method for producing an EL element for realizing the high luminous efficiency, the high light takeout efficiency, the simplicity of the production process, and the formation of hig...
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7213942 |
A single-chip integrated LED particularly adapted for direct use with a high voltage AC power comprises a plurality of series-connected LEDs arranged in two arrays and flip chip bonded to a transparent substrate. The opposite polarities ...
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7186580 |
Systems and methods are disclosed for fabricating a semiconductor light emitting diode (LED) device by forming an n-gallium nitride (n-GaN) layer on the LED device; and roughening the surface of the n-GaN layer to extract light from an i...
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7170109 |
A technique enabling to improve element isolation characteristic of a semiconductor device is provided. An element isolation structure is provided in a semiconductor substrate in which a silicon layer, a compound semiconductor layer and ...
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7154136 |
Regions of an integrated circuit are isolated by a structure that includes at least one isolating trench on the periphery of an active area. The trench is deep, extending at least about 0.5 μm into the substrate. The isolating structure...
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7151279 |
A thin film transistor array panel is provided, which includes: a substrate; a first signal line formed on the substrate; a second signal line formed on the substrate and intersecting the first signal line; a thin film transistor includi...
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7132691 |
It has a structure in which an active layer ( 5 ) that emits light by electric current injection is sandwiched between an n-type cladding layer ( 4 ) and a p-type cladding layer ( 6 ) made of materials having a larger band gap than the a...
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7122834 |
A semiconductor apparatus includes a substrate; an adhesion layer disposed on the substrate, the adhesion layer mainly consisting of semiconductor material; and at least one semiconductor thin film including at least one semiconductor de...
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7119354 |
Provided is a coating liquid which can easily form a porous film having desirably controlled thickness by the method used for a usual semiconductor process, and having an excellent mesopore channel structure. Specifically provided is a c...
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7112824 |
A light-emitting diode array comprising a conductive layer formed on a substrate, pluralities of separate light-emitting portions formed on the conductive layer, a first groove formed in the conductive layer to divide the light-emitting ...
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7078729 |
A semiconductor device includes a substrate, and a semiconductor thin film bonded to the substrate, wherein the semiconductor thin film includes a plurality of discrete operating regions and an element isolating region which isolates the...
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7064406 |
A pixel cell having a halogen-rich region localized between an oxide isolation region and a photosensor. The halogen-rich region prevents leakage from the isolation region into the photosensor, thereby suppressing dark current in imagers.
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7049677 |
A semiconductor device has a driver device ( 10 ) in proximity to a power device ( 12 ). In making the semiconductor device, an N+ layer ( 24 ) is formed on a substrate ( 22 ). A portion of the N+ layer is removed, substantially down to ...
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7034340 |
A light-emitting diode array comprising a conductive layer formed on a substrate; a plurality of separate light-emitting portions formed on the conductive layer; a first electrode formed on at least part of an upper surface of each of th...
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7026754 |
To provide a matrix substrate, an electronic apparatus, an electro-optic apparatus, and an electronic unit which can suppress short-circuits between various types of wiring lines adjacent to each other, data lines adjacent to each other ...
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7002210 |
On a semiconductor substrate, a well is formed. In the well, one MOS transistor including a gate electrode, a source region, a source field limiting layer and a source/drain region, and another MOS transistor including a gate electrode, ...
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6995402 |
A mount for a semiconductor light emitting device includes an integrated reflector cup. The reflector cup includes a wall formed on the mount and shaped and positioned to reflect side light emitted from the light emitting device along a ...
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6989552 |
A method for making an integrated circuit includes forming spaced-apart trenches on a surface of a single crystal silicon substrate, lining the trenches with a silicon oxide layer, forming a first polysilicon layer over the silicon oxide...
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6969946 |
The amount of usefully captured light in an optical system may be increased by concentrating light in a region where it can be collected by the optical system. A light emitting device may include a substrate and a plurality of semiconduc...
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6958517 |
A programmable integrated circuit (IC) arrangement includes at least one input/output terminal, at least two receiver/source terminals for selectable electrical connection to the at least one input/output terminal, and a plurality of lay...
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6946682 |
A physically robust light emitting diode is disclosed that offers high-reliability in standard packaging and that will withstand high temperature and high humidity conditions. The diode comprises a Group III nitride heterojunction diode ...
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6911676 |
A semiconductor LED device in which a reverse p-n junction diode protective element is integrated with a single p-n junction AlGaInN semiconductor LED element having a conventional structure, so that the semiconductor LED device exhibits...
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6909122 |
According to the present invention, a light-emitting semiconductor device has light-emitting elements separated by isolation trenches, preferably on two sides of each light-emitting element. The device may be fabricated by forming a sing...
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6881977 |
This invention regards to novel light emitting device based on indirect bandgap materials. This device makes efficient electroluminescence possible in indirect-bandgap materials. With the quantum mechanically tunneling effect and carrier...
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6876008 |
A device includes a submount, and a semiconductor light emitting device mounted on first and second conductive regions on a first side of the submount in a flip chip architecture configuration. The submount has third and fourth conductiv...
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6858875 |
A light-emitting-element array has a semiconductor layer formed on a current-blocking layer. Light-emitting elements are formed in the semiconductor layer by diffusion of an impurity of a different conductive type. An isolation trench di...
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6853007 |
A semiconductor assembly having a submount with a plurality of conductive traces. A semiconductor array, such as a VCSEL array or a detector array, is attached to the submount. A plurality of conductive vias pass through the submount's b...
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6828727 |
In an active matrix drive light emitting device, above a thin film transistor, a light emitting element having an anode, a layer comprised of an organic compound and a cathode containing an alkali metal is formed between a third insulati...
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6828597 |
In a radiation-emitting semiconductor component having a semiconductor body that comprises a radiation-generating active layer, having a central front-side contact on a front side of the semiconductor body and a back-side contact on a ba...
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6828596 |
In accordance with the invention, a light emitting device includes a substrate, a layer of first conductivity type overlying the substrate, a light emitting layer overlying the layer of first conductivity type, and a layer of second cond...
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6828589 |
An optical semiconductor device comprising a plurality of semiconductor lasers formed on a single substrate is provided, in which each of said semiconductor lasers emits a laser lights having designed different oscillating wavelength. Th...
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6806506 |
A semiconductor device includes semiconductor elements, a housing for accommodating the semiconductor elements, a resin material arranged in the housing for enclosing the semiconductor elements, and leads connected to the semiconductor e...
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6800933 |
Various embodiments of a semiconductor-on-insulator substrate incorporating a Peltier effect heat transfer device and methods of fabricating the same are provided. In one aspect, a circuit device is provided that includes an insulating s...
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6794685 |
The light emitting device includes a p type nitride semiconductor layer, a light emitting layer and an n type nitride semiconductor layer stacked on an Si (silicon) substrate in this order from the side of the Si substrate. The Si substr...
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6781157 |
A LED monolithic array type like emitting device which has a plurality of light emitting parts. The device is particularly suitable as a light source for printers. Each light emitting part has a light emitting diode having a laminate str...
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6773943 |
A display unit having a sufficient luminance and a method of fabricating the display unit are provided. The display unit includes micro-sized semiconductor light emitting devices fixedly arrayed on a plane of a base body of the display u...
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