BASIC SUBJECT MATTER OF CLASSThis is the generic class for electronic digital logic devices, circuitry and subcombinations thereof, wherein non-arithmetical operations are performed upon discrete electrical signals representing a value normally described by numerical digits.
COMBINATION WITH BASIC SUBJECT MATTER INCLUDED IN THIS CLASS:Included in this class (326) is subject matter relating to:1. digital circuits which perform basic logic functions such as AND, OR, NAND, NOR, EX-OR, or NOT;2. decoder, inhibitor, multifunctional, or programmable logic circuits, etc., which perform basic logic functions and are used in an environment that is not related to any particular art provided for by other classes;3. circuits that are used to control the performance of digital logic circuits, such as accelerating, switching, reliability, transmission integrity, etc.;4. circuits that are used to control the functioning or to interface logical devices or circuitry, such as driving, clocking, or synchronizing. |
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1 • SUPERCONDUCTOR (E.G., CRYOGENIC, ETC.)
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2 • Tunneling device
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3 • Josephson tunneling device
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4 • Plural devices (e.g., distributive device, etc.)
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5 • Interference device (i.e., SQUID)
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6 • Function of AND, OR, NAND, NOR, or NOT
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7 • Function of AND, OR, NAND, NOR, or NOT
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8 • SECURITY (E.G., ACCESS OR COPY PREVENTION, ETC.)
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9 • RELIABILITY
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10 • Redundant
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11 • Voter circuit (e.g., majority logic, etc.)
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12 • With flip-flop
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13 • With field effect-transistor
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14 • Fail-safe
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15 • Parasitic prevention in integrated circuit structure
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16 • WITH TEST FACILITATING FEATURE
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17 • ACCELERATING SWITCHING
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18 • Bipolar transistor
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19 • With Schottky device
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20 • Complementary transistors
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21 • SIGNAL SENSITIVITY OR TRANSMISSION INTEGRITY
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22 • Input noise margin enhancement
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23 • With field effect-transistor
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24 • Complementary FET‘s
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25 • Depletion or enhancement
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26 • Output switching noise reduction
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27 • With field effect-transistor
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28 • With clocking
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29 • Pulse shaping (e.g., squaring, etc.)
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30 • Bus or line termination (e.g., clamping, impedance matching, etc.)
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31 • Signal level or switching threshold stabilization
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32 • Temperature compensation
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33 • Bias or power supply level stabilization
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34 • With field effect-transistor
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35 • THRESHOLD (E.G., MAJORITY, MINORITY, OR WEIGHTED INPUTS, ETC.)
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36 • With field effect-transistor
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37 • MULTIFUNCTIONAL OR PROGRAMMABLE (E.G., UNIVERSAL, ETC.)
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38 • Having details of setting or programming of interconnections or logic functions
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39 • Array (e.g., PLA, PAL, PLD, etc.)
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40 • With flip-flop or sequential device
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41 • Significant integrated structure, layout, or layout interconnections
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42 • Bipolar transistor
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43 • Emitter-coupled logic or emitter-follower logic
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44 • Field effect transistor
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45 • Complementary FET‘s
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46 • Sequential (i.e., finite state machine) or with flip-flop
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47 • Significant integrated structure, layout, or layout interconnections
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48 • Bipolar transistor
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49 • Field-effect transistor
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50 • Complementary FET‘s
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51 • INHIBITOR
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52 • EXCLUSIVE FUNCTION (E.G., EXCLUSIVE OR, ETC.)
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53 • Half-adder or quarter-adder
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54 • Exclusive NOR
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55 • With field-effect transistor
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56 • TRI-STATE (I.E., HIGH IMPEDANCE AS THIRD STATE)
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57 • With field effect-transistor
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58 • Complementary FET‘s
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59 • THREE OR MORE ACTIVE LEVELS (E.G., TERNARY, QUATENARY, ETC.)
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60 • With conversion (e.g., three level to two level, etc.)
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61 • INSULATED GATE CHARGE TRANSFER DEVICE
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62 • INTERFACE (E.G., CURRENT DRIVE, LEVEL SHIFT, ETC.)
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63 • Logic level shifting (i.e., interface between devices of different logic families)
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64 • Bi-CMOS
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65 • TTL to/from CMOS
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66 • ECL to/from CMOS
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67 • ECL to/from TTL
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68 • Field-effect transistor (e.g., JFET, MOSFET, etc.)
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69 • ECL to/from GaAs FET (e.g., MESFET, etc.)
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70 • TTL to/from MOS
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71 • TTL to/from CMOS
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72 • Using depletion or enhancement transistors
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73 • ECL to/from MOS
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74 • ECL to/from TTL
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75 • Bipolar transistor
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76 • TTL to/from MOS
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77 • ECL to/from MOS
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78 • ECL to/from TTL
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79 • Integrated Injection Logic (I2L)
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80 • Supply voltage level shifting (i.e., interface between devices of a same logic family with different operating voltage levels)
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81 • CMOS
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82 • Current driving (e.g., fan in/out, off chip driving, etc.)
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83 • Field-effect transistor
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84 • Bi-CMOS
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85 • Having plural output pull-up or pull-down transistors
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86 • Bus driving
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87 • Having plural output pull-up or pull-down transistors
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88 • With capacitive or inductive bootstrapping
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89 • Bipolar transistor
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90 • Bus driving
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91 • Having plural output pull-up or pull-down transistors
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92 • With capacitive or inductive bootstrapping
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93 • CLOCKING OR SYNCHRONIZING OF LOGIC STAGES OR GATES
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94 • Metastable state prevention
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95 • Field-effect transistor
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96 • Two or more clocks (e.g., phase clocking, etc.)
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97 • MOSFET
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98 • MOSFET
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99 • HAVING LOGIC LEVELS CONVEYED BY SIGNAL FREQUENCY OR PHASE
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100 • INTEGRATED INJECTION LOGIC
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101 • SIGNIFICANT INTEGRATED STRUCTURE, LAYOUT, OR LAYOUT INTERCONNECTIONS
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102 • Field-effect transistor
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103 • Complementary FET‘s
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104 • FUNCTION OF AND, OR, NAND, NOR, or NOT
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105 • Decoding
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106 • With field-effect transistor
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107 • Depletion or enhancement
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108 • CMOS
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109 • Bipolar and FET
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110 • Bi-CMOS
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111 • Space discharge device (e.g., vacuum tube, etc.)
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112 • Field-effect transistor (e.g., JFET, etc.)
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113 • Pass transistor logic or transmission gate logic
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114 • Wired logic (e.g., wired-OR, wired-AND, dotted logic, etc.)
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115 • Source-coupled logic (e.g., current mode logic (CML), differential current switch logic (DCSL), etc.)
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116 • Schottky-gate FET (i.e., MESFET)
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117 • Depletion or enhancement
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118 • Diode transistor logic
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119 • MOSFET (i.e., metal-oxide semiconductor field-effect transistor)
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120 • Depletion or enhancement
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121 • CMOS
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122 • Complementary FET‘s
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123 • With semiconductor diode or negative resistance device
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124 • Bipolar transistor (e.g., RTL, DCTL, etc.)
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125 • Wired logic or open collector logic (e.g., wired-OR, wired-AND, dotted logic, etc.)
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126 • Emitter-coupled or emitter-follower logic
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127 • Current mode logic (CML)
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128 • Transistor-transistor logic (TTL)
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129 • Complementary transistor logic (CTL)
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130 • Diode-transistor logic (DTL)
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131 • With metal semiconductor junction diode (e.g., Schottky barrier, etc.)
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132 • With negative resistance device (e.g., tunnel diode, thyristor, etc.)
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133 • Diode
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134 • Negative resistance diode (e.g., tunnel, gunn, etc.)
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135 • Negative resistance device
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136 • MISCELLANEOUS
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