Title:
【発明の名称】半導体コンポーネントの中に導電性通路を形成するためのプロセス及び装置
Document Type and Number:
Japanese Patent JP2000512438
Kind Code:
A
Abstract:
The invention relates to a process and a device for the production of electrically conductive passages in semiconductor components preferably positioned on a semiconductor, by means of thermo-migration through the production of a temperature gradient between two opposing outer surfaces of the semiconductor components and application of a conductive doping substance to a cooler outer surface. One outer surface of the semiconductor is positioned on a cooled sample take-up and the opposing outer surface is exposed to heat radiation, which can be controlled both with regard to its total efficiency and its efficiency distribution over the surface of the semiconductor. The total efficiency and/or the efficiency distribution of the heat radiation is adjusted depending upon the temperature measured on at least one temperature measurement point on the semiconductor and/or a semiconductor component.
Inventors:
Kriegel, Bernd
Frank, Frank
Arnold, Reine
Frank, Frank
Arnold, Reine
Application Number:
JP50359399A
Publication Date:
September 19, 2000
Filing Date:
June 22, 1998
Export Citation:
Assignee:
Dr. Johans Heidenhain Gamebehr
Silicon Sensor Game Bha
Silicon Sensor Game Bha
International Classes:
C30B13/02; H01L21/00; H01L21/22; H01L21/225; H01L23/52; H01L21/24; H01L21/3205; H01L21/768; H01L23/48; H01L31/02; H01L31/0224; H01L31/10; (IPC1-7): H01L21/225; H01L21/22; H01L21/3205
Attorney, Agent or Firm:
Hidehiko Okada (3 others)