Title:
【発明の名称】MOSトランジスタの製造方法
Document Type and Number:
Japanese Patent JP2001501033
Kind Code:
A
Abstract:
PCT No. PCT/DE97/01933 Sec. 371 Date Jun. 4, 1999 Sec. 102(e) Date Jun. 4, 1999 PCT Filed Sep. 3, 1996 PCT Pub. No. WO98/13865 PCT Pub. Date Apr. 2, 1998In order to produce a MOS transistor with HDD profile and LDD profile, the HDD profile is firstly formed, followed by the LDD profile, in the area for the LDD profile in order to produce steep dopant profiles. The LDD profile is preferably produced by etching and in situ doped selective epitaxy.
Inventors:
Bernhard Rustig
Herbert Schaefer
Martin flanoche
Herbert Schaefer
Martin flanoche
Application Number:
JP51512798A
Publication Date:
January 23, 2001
Filing Date:
September 03, 1997
Export Citation:
Assignee:
Siemens Aktiengesellschaft
International Classes:
H01L21/336; H01L21/8238; H01L27/092; H01L29/78; H01L29/786; (IPC1-7): H01L21/8238; H01L21/336; H01L27/092; H01L29/78; H01L29/786
Attorney, Agent or Firm:
Toshio Yano (3 outside)