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Patent Searching and Data


Title:
【発明の名称】基体及び少なくとも1つの変形可能なボディを有する半導体センサ
Document Type and Number:
Japanese Patent JP2001517783
Kind Code:
A
Abstract:
The invention relates to a semiconductor detector with a base structure (4) and at least one deformable body (8), wherein the deformable body (8) consists of a semiconductor substrate which is doped with a dopant displaying a first type of conductivity. Piezo resistors (14) doped with a dopant displaying an opposite type of conductivity are located in the deformable body (8). The deformable body (8) is in contact with a medium in at least one partial area. The inventive semiconductor detector is characterized in that the partial area has a dopant concentration that is lower than the dopant concentration in the area located between said partial area and the piezo resistor (14).

Inventors:
Thomas baver
Stephan Schmidt
Gunter Airer
Application Number:
JP2000513119A
Publication Date:
October 09, 2001
Filing Date:
August 14, 1998
Export Citation:
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Assignee:
Siemens Aktiengesellschaft
International Classes:
G01L9/00; G01L9/04; G01L9/06; G01P15/08; G01P15/12; (IPC1-7): G01L9/04; G01P15/12
Attorney, Agent or Firm:
Toshio Yano (4 outside)