Title:
【発明の名称】イオン・ビーム・エッチング装置および方法
Document Type and Number:
Japanese Patent JP2002500808
Kind Code:
A
Abstract:
The invention concerns a device and a method for ion beam etching for producing an etched surface (2) on a semiconductor (1) or insulant The device comprises a positive ion source (20), means for guiding (23) an ion beam (42), a system for detecting the spatial and temporal interaction of the ions and the etched surface, means for interrupting (24) the beam and means for displacing the etched surface relatively to the beam. A processing unit (29) is connected to the displacing means, to the detecting means and to the beam interrupting means and controls, preferably iteratively, successive, operations detecting interaction of the ion beam and the etched surface, interrupting the beam, relative displacing of the etched surface with respect to the beam position and restoring the beam.
Inventors:
Bryan Jean-Pierre
Application Number:
JP50031599A
Publication Date:
January 08, 2002
Filing Date:
May 25, 1998
Export Citation:
Assignee:
Universite Pierre et Mari Curi
International Classes:
H01J37/305; H01J37/317; H01L21/302; H01L21/3065; (IPC1-7): H01J37/305; H01L21/302
Attorney, Agent or Firm:
Masahiko Takeda (3 outside)