Title:
【発明の名称】広範囲メンブランマスクを製造する方法
Document Type and Number:
Japanese Patent JP2002508583
Kind Code:
A
Abstract:
Inventive methods are provided for the production of large-area membrane masks, wherein an inexpedient mechanical excessive strain on the membrane or of the membrane layer/etching stop layer/supporting wafer system or the resulting breaking of the components is avoided, which excessive strain occurs particularly due to the employment of an etching cell or generally due to the thin semiconductor layers. The stripping of the semiconductor support layer is preferably performed in two partial steps that are carried out in a mechanically sealed etching cell or with a protective coating, or that one partial step is performed with an etching cell and one with a protective coating, or that the stripping of the semiconductor support layer is performed in a mechanically sealed etching cell initially with a supporting grid and that the supporting grid is removed only after withdrawal from the etching cell.
Inventors:
Buckeyjerk
Let's Cous Florian
Pentecar Elisabeth
Springer Reinhard
Heflinger Bernd
Leshner Hans
Let's Cous Florian
Pentecar Elisabeth
Springer Reinhard
Heflinger Bernd
Leshner Hans
Application Number:
JP2000538275A
Publication Date:
March 19, 2002
Filing Date:
March 25, 1999
Export Citation:
Assignee:
Institute Futur Microelectronics Stuttgart Stiftung Death Effentrichen Lechts
International Classes:
G03F1/14; G03F1/16; G03F1/20; G03F1/22; H01L21/027; (IPC1-7): H01L21/027; G03F1/14; G03F1/16
Attorney, Agent or Firm:
Takehisa Ito (1 outside)