Title:
【発明の名称】二重イオン源をもつ処理システム
Document Type and Number:
Japanese Patent JP2002515541
Kind Code:
A
Abstract:
A substrate processing system includes a processing chamber, a substrate holder positioned in the chamber, a gas source for supplying a process gas to the chamber, first and second ion sources located in the chamber, and a power source for energizing the first and second ion sources. Each ion source ionizes the process gas to produce ions for processing a substrate disposed on the substrate holder. The first and second ion sources include first and second anodes, respectively. The power source energizes the first and second anodes in a time multiplexed manner, such that only one of the first and second ion sources is energized at any time and interactions between ion sources are eliminated.
Inventors:
Brooke, terry
Rogers, James H
McGinnis, Sheen Pee
Rogers, James H
McGinnis, Sheen Pee
Application Number:
JP2000549074A
Publication Date:
May 28, 2002
Filing Date:
May 07, 1999
Export Citation:
Assignee:
INTEVAC INCORPORATED
International Classes:
B05C21/00; C23C16/26; C23C16/27; C23C16/44; H05H1/46; C23C16/50; C23C16/513; G11B5/84; H01J37/317; (IPC1-7): C23C16/44; G11B5/84; H05H1/46
Attorney, Agent or Firm:
Sumio Takeuchi (1 outside)