Title:
【発明の名称】銅をベースとするフィルムの化学蒸着方法及びその銅源前駆体
Document Type and Number:
Japanese Patent JP2002526651
Kind Code:
A
Abstract:
A method for depositing copper-based films and a copper source precursor for use in the chemical vapor deposition of copper-based films are provided. The precursor includes a mixture of at least one ligand-stabilized copper (I) beta -diketonate precursor; and at least one copper(II) beta -diketonate precursor. The method includes introducing into a deposition chamber: (i) a substrate; (ii) a copper source precursor in a vapor state including a mixture of at least one ligand-stabilized copper (I) beta -diketonate precursor; and at least one copper(II) beta -diketonate precursor; and (iii) at least one transport gas, different than said copper source precursor. The reaction substrate temperature is maintained at from about 50 DEG C. to about 500 DEG C. for a period of time sufficient to deposit a copper-based film on said substrate.
Inventors:
Alan E. Carroyeros
Barry C. Arkles
Barry C. Arkles
Application Number:
JP2000574181A
Publication Date:
August 20, 2002
Filing Date:
September 08, 1999
Export Citation:
Assignee:
Gerest Incorporated
The Research Foundation of State University of New York
The Research Foundation of State University of New York
International Classes:
C07C49/92; C07F1/08; C23C16/04; C23C16/14; C23C16/18; H01L21/28; H01L21/285; H01L21/768; H01L23/532; (IPC1-7): C23C16/18; C07C49/92; C07F1/08; C23C16/14; H01L21/285
Attorney, Agent or Firm:
Motohiro Kurauchi (1 outside)