Title:
【発明の名称】イオン注入のための高伝搬で,低エネルギーのビームラインのアーキテクチャー
Document Type and Number:
Japanese Patent JP2003511822
Kind Code:
A
Abstract:
An ion beam apparatus includes an ion source, a first magnet assembly, a structure defining a resolving aperture and a second magnet assembly. The ion source has an elongated extraction aperture for generating a ribbon ion beam. The first magnet assembly provides first magnetic fields for deflecting the ribbon ion beam perpendicular to the long dimension of the ribbon ion beam cross section, wherein different ion species in the ribbon ion beam are separated. The resolving aperture selects an ion species from the separated ion beam. The second magnet assembly provides second magnetic fields for deflecting ions of the selected ion species in the ribbon ion beam parallel to the long dimension of the ribbon ion beam cross section to produce desired ion trajectories. The width of the ribbon ion beam increases through most of the beamline. As a result, low energy performance is enhanced.
Inventors:
Anau, Anthony
Application Number:
JP2001529003A
Publication Date:
March 25, 2003
Filing Date:
September 18, 2000
Export Citation:
Assignee:
Varian Semiconductor Equipment Associates, Inc.
International Classes:
H01J37/05; H01J37/147; H01J37/317; H01L21/265; (IPC1-7): H01J37/317; H01J37/05; H01L21/265
Domestic Patent References:
| JPS60107246A | 1985-06-12 | |||
| JPH06342639A | 1994-12-13 | |||
| JPH10241589A | 1998-09-11 | |||
| JPH0945273A | 1997-02-14 | |||
| JPH04230944A | 1992-08-19 |
Attorney, Agent or Firm:
Sumio Takeuchi (1 outside)