Title:
【発明の名称】接点洗浄作業用に主反応チェンバーに外付けした補助電極を持つ電気メッキシステム
Document Type and Number:
Japanese Patent JP2003526004
Kind Code:
A
Abstract:
A system for electroplating a semiconductor wafer is set forth. The system comprises a first electrode in electrical contact with the semiconductor wafer and a second electrode. The first electrode and the semiconductor wafer form a cathode during electroplating of the semiconductor wafer. The second electrode forms an anode during electroplating of the semiconductor wafer. A reaction container defining a reaction chamber is also employed. The reaction chamber comprises an electrically conductive plating solution. At least a portion of each of the first electrode, the second electrode, and the semiconductor wafer contact the plating solution during electroplating of the semiconductor wafer. An auxiliary electrode is disposed exterior to the reaction chamber and positioned for contact with plating solution exiting the reaction chamber during cleaning of the first electrode to thereby provide an electrically conductive path between the auxiliary electrode and the first electrode. A power supply system is connected to supply plating power to the first and second electrodes during electroplating of the semiconductor wafer and is further connected to render the first electrode an anode and the auxiliary electrode a cathode during cleaning of the first electrode.
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Inventors:
Graham, Lyndon Dobrieu
Hanson, Kyle
Ritzsdorf, Thomas El
Turner, The Jeffrey Eye
Hanson, Kyle
Ritzsdorf, Thomas El
Turner, The Jeffrey Eye
Application Number:
JP2000513993A
Publication Date:
September 02, 2003
Filing Date:
January 06, 1998
Export Citation:
Assignee:
Semi-Tooth Incorporated
International Classes:
C25D5/08; C25D7/12; C25D17/00; C25D21/06; C25F1/00; H01L21/00; H01L21/288; H01L21/677; (IPC1-7): C25D7/12; C25D5/08; C25D17/00; C25D21/06; C25F1/00; H01L21/288
Attorney, Agent or Firm:
Heiyoshi Odashima