Title:
【発明の名称】楕円偏光法及び反射偏光法のための空間的平均化技術
Document Type and Number:
Japanese Patent JP2003528290
Kind Code:
A
Abstract:
This invention relates to optical metrology tools that are used to evaluate small measurement areas on a semiconductor wafer, where the measurement area is surrounded by a material different from the measurement area. In one embodiment, a probe beam is scanned over the measurement area and the surrounding material as data is taken at multiple locations. A processor determines the characteristics of the measurement area by identifying an extremum value of the measurements which represents the center of the measurement area. In another embodiment, the processor determines the characteristics of the sample using a combination of light measured from within and without the measurement area. The measured data is treated as a combination of light from both regions and mathematically modeled to account for both the contribution of the light reflected from the measurement area and the light reflected from the surrounding material.
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Inventors:
Way, Lampua
Cho, Han Yu
Opsal, John
Cho, Han Yu
Opsal, John
Application Number:
JP2001523593A
Publication Date:
September 24, 2003
Filing Date:
September 13, 2000
Export Citation:
Assignee:
Therma-Wave Inc.
International Classes:
G01B11/06; G01J4/04; G01N21/00; G01N21/21; H01L21/66; G01N21/95; (IPC1-7): G01B11/06; G01J4/04; G01N21/00; G01N21/21
Attorney, Agent or Firm:
Yuzo Yamazaki (3 others)