Title:
半導体基板上でプリメタル誘電体膜を形成するための方法
Document Type and Number:
Japanese Patent JP2004517467
Kind Code:
A
Abstract:
A method of forming a pre-metal dielectric film having good as deposited gapfill characteristics, as well as good mobile-ion gettering capability. The method involves first depositing a layer of high-ozone undoped silicon dioxide film having a high ozone/TEOS volume ratio. Then, a low-ozone doped BPSG film is deposited over the high-ozone undoped silicon dioxide layer. The film layers are heat treated to densify the film, and then the top layer is planarized using known planarization techniques to a thickness that allows for adequate mobile-ion gettering.
Inventors:
Kerker, Amit S
Whiteman, Michael Di
Whiteman, Michael Di
Application Number:
JP2002524209A
Publication Date:
June 10, 2004
Filing Date:
July 18, 2001
Export Citation:
Assignee:
ATMEL CORPORATION
International Classes:
C23C16/42; H01L21/316; H01L21/3105; (IPC1-7): H01L21/316; C23C16/42
Attorney, Agent or Firm:
Kuro Fukami
Toshio Morita
Yoshihei Nakamura
Yutaka Horii
Hisato Noda
Masayuki Sakai
Toshio Morita
Yoshihei Nakamura
Yutaka Horii
Hisato Noda
Masayuki Sakai