Title:
プラズマ処理用電極及びその製造方法並びにその使用
Document Type and Number:
Japanese Patent JP2004524677
Kind Code:
A
Abstract:
A silicon electrode for a plasma reaction chamber wherein processing of a semiconductor substrate such as a single wafer can be carried out and a method of processing a semiconductor substrate with the electrode. The electrode is a low resistivity electrode having an electrical resistivity of less than 1 ohm-cm. The electrode can be a zero defect single crystal silicon or silicon carbide electrode such as a showerhead electrode bonded or clamped to support such as a temperature controlled plate or ring. The showerhead electrode can be in the form of a circular disk of uniform thickness and an elastomeric joint can be provided between a support ring and the electrode. The electrode can include gas outlets having 0.020 to 0.030 inch diameters.
Inventors:
Hubasek, Jerome, S.
Erinbo, Albert, Earl.
Benzine, david
Erinbo, Albert, Earl.
Benzine, david
Application Number:
JP2002555446A
Publication Date:
August 12, 2004
Filing Date:
December 07, 2001
Export Citation:
Assignee:
LAM RESEARCH CORPORATION
International Classes:
H05H1/46; H01J37/32; H01L21/3065; (IPC1-7): H01L21/3065; H01J37/32; H05H1/46
Attorney, Agent or Firm:
Yasunori Otsuka
Shiro Takayanagi
Yasuhiro Otsuka
Shuji Kimura
Hidekazu Matsumaru
Shiro Takayanagi
Yasuhiro Otsuka
Shuji Kimura
Hidekazu Matsumaru