銅または銀の膜を研磨するための改良された化学機械的研磨スラリー

Title:

銅または銀の膜を研磨するための改良された化学機械的研磨スラリー

Document Type and Number:

Japanese Patent JP2005518669

Kind Code:

A

Abstract:

A slurry and related method for chemical mechanical polishing (CMP) of a metal film includes a solution containing at one halide ion and at least one halogen species which react with the metal film to form a surface layer on the film. The surface layer formed can be a metal halide layer. The surface layer can be removed by abrasive particles embedded in the polishing pad, or a thin inorganic layer coated on the polishing pad.

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Inventors:

Shin, Rajiv Kay.
Lee, Sun-Man

Application Number:

JP2003571363A

Publication Date:

June 23, 2005

Filing Date:

January 29, 2003

Export Citation:

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Assignee:

UNIVERSITY OF FLORIDA

International Classes:

C09G1/02; C09G1/04; C09K3/14; C23F3/06; B24B37/00; H01L21/304; H01L21/306; H01L21/321; (IPC1-7): H01L21/304; B24B37/00; C09K3/14; H01L21/306

Attorney, Agent or Firm:

Hironobu Onda
Makoto Onda

Previous Patent: JP2005518668

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