Title:
高くなったガードリングを有するパワーSiCデバイス
Document Type and Number:
Japanese Patent JP2005518672
Kind Code:
A
Abstract:
Silicon carbide semiconductor power devices having epitaxially grown guard rings edge termination structure are provided. Forming the claimed guard rings from an epitaxially grown SiC layer avoids the traditional problems associated with implantation of guard rings, and permits the use of self aligning manufacturing techniques for making the silicon carbide semiconductor power devices.
Inventors:
Sankin, Igor
Dufrane, Gianna Bee
Dufrane, Gianna Bee
Application Number:
JP2003572069A
Publication Date:
June 23, 2005
Filing Date:
February 21, 2003
Export Citation:
Assignee:
SEMISOUTH LABORATORIES INC.
International Classes:
H01L21/331; H01L21/337; H01L29/06; H01L29/732; H01L29/772; H01L29/78; H01L29/80; H01L29/808; H01L29/861; H01L29/47; H01L29/868; H01L29/872; H01L29/24; (IPC1-7): H01L29/06; H01L21/331; H01L21/337; H01L29/47; H01L29/732; H01L29/78; H01L29/80; H01L29/808; H01L29/861; H01L29/872
Domestic Patent References:
| JPH1187698A | 1999-03-30 | |||
| JPH09293852A | 1997-11-11 |
Attorney, Agent or Firm:
Hajime Tsukuni
Fumio Shinoda
Fumio Shinoda