Title:
高性能BiFET低雑音増幅器
Document Type and Number:
Japanese Patent JP2005520372
Kind Code:
A
Abstract:
According to one exemplary embodiment, a circuit comprises a bipolar transistor having a base, an emitter, and a collector. For example, the bipolar transistor can be an NPN SiGe HBT. The base of the bipolar transistor is an input of the circuit. The emitter of the bipolar transistor is coupled to a first reference voltage. According to this exemplary embodiment, the circuit further comprises a field effect transistor having a gate, a source, and a drain. For example, the field effect transistor may be an NFET. The collector of the bipolar transistor is coupled to the source of the field effect transistor. The gate of the field effect transistor is coupled to a bias voltage. The drain of the field effect transistor is coupled to a second reference voltage. The drain of the field effect transistor is an output of the circuit.
Inventors:
Ma, pinsi
Rakanelli, Marco
Rakanelli, Marco
Application Number:
JP2003563083A
Publication Date:
July 07, 2005
Filing Date:
January 17, 2003
Export Citation:
Assignee:
SKYWORKS SOLUTIONS,INC.
International Classes:
H03F1/22; H03F3/189; (IPC1-7): H03F1/22
Attorney, Agent or Firm:
Kuro Fukami
Toshio Morita
Yoshihei Nakamura
Yutaka Horii
Hisato Noda
Masayuki Sakai
Toshio Morita
Yoshihei Nakamura
Yutaka Horii
Hisato Noda
Masayuki Sakai