Title:
イオン注入システムで用いるためのビームストップ
Document Type and Number:
Japanese Patent JP2005527961
Kind Code:
A
Abstract:
The present invention provides a beam stop for use in an ion implantation system that includes a base formed of a thermally conductive material, and a heat transfer layer formed of a semi-elastic material that is disposed on a surface of the base. The beam stop further includes one or more tiles, each formed of a thermally conductive refractory material, that are disposed on the semi-elastic layer so as to face an ion beam in the implantation system. The heat transfer layer transfers heat generated in the tile in response to ion beam impact to the base. The base in turn can be coupled to a heat sink to remove heat from the base. The thickness and the thermal conductivity of the base, and those of the heat transfer layer and the tile are chosen so as to ensure uniform expansion of the base and the tile when the beam stop is heated by ion beam impact.
Inventors:
Richards Stephen
Berry christopher
Rarebit William
Berry christopher
Rarebit William
Application Number:
JP2004509985A
Publication Date:
September 15, 2005
Filing Date:
May 27, 2003
Export Citation:
Assignee:
Ibis Technology Corporation
International Classes:
H01J37/04; H01J37/20; H01J37/244; H01J37/317; H01L21/265; C23C14/48; (IPC1-7): H01J37/317; C23C14/48; H01J37/04; H01J37/20; H01L21/265
Attorney, Agent or Firm:
Hiroaki Tazawa
Konobu Kato
Hideaki Tazawa
Hamada Hatsune
Konobu Kato
Hideaki Tazawa
Hamada Hatsune